圖片僅供參考

IRFZ34NS

Name: IRFZ34NS
Rating: 4.7 (12 reviews)

MOSFET N-CH 55V 29A D2PAK

製造商
製造商。部分 #IRFZ34NS
包
資料表
有現貨的6910

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Supplier	Infineon Technologies
Package	Tube
Series	HEXFET®
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	55 V
Current-ContinuousDrain(Id)@25°C	29A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	40mOhm @ 16A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	34 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	700 pF @ 25 V
PowerDissipation(Max)	3.8W (Ta), 68W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D2PAK

概述

Description

IRFZ34NS is an N-channel, enhancement-mode power MOSFET from International Rectifier. It’s used for high-current switching in 55V-class circuits (DC-DC converters, motor drivers, load switches, etc.).
Key points
- Vds: about 55 V; capable of tens of amps with proper heat sinking.
- Rds(on): typically in the range of a few tens of milliohms (depends on temperature and Vgs; specified at Vgs = 10 V).
- Gate drive: not a true logic-level device; full conduction usually requires ~10 V on the gate. Threshold is roughly 2–4 V.
- Package: commonly TO-220AB or a surface-mount variant (NS suffix often indicates RoHS/packaging options).
- Includes an intrinsic body diode; thermal management and safe operating area (SOA) must be observed.
Usage notes
- Drive with a gate resistor (e.g., 100–220 Ω) and consider a zener to protect G-S.
- Provide adequate heat sinking; monitor junction temperature.
- Use in the usual MOSFET-switching topology with a flyback diode for inductive loads.
For exact numbers and packaging, check the specific IRFZ34NS datasheet, as variants can differ slightly.

Features

Here are the key features of the IRFZ34NS (N-channel power MOSFET):
- Type: N-channel enhancement-mode MOSFET
- VDS: 55 V
- ID: around 28 A (continuous)
- RDS(on): ≈0.04 Ω (typ) at VGS = 10 V; max ~0.08 Ω
- VGS(th): typically 2–4 V
- Fast switching with low gate charge
- Avalanche rugged and good SOA (rugged performance for switching)
- Packaging: TO-220AB (through-hole) and RoHS-compliant variants (NS suffix)
- Applications: switching power supplies, motor drives, DC-DC converters
Note: exact numbers can vary by lot and package; consult the datasheet for precise specifications.

Package

TO-220AB (through-hole) package — a three-lead N‑channel power MOSFET with a mounting tab.

Pinout

IRFZ34NS is a 3‑pin N‑channel power MOSFET. Pinout (TO‑220/DPAK style common convention):
- Pin 1: Gate (G) — voltage input that turns the channel on/off.
- Pin 2: Drain (D) — main current input/output (tab/heatsink is also Drain).
- Pin 3: Source (S) — main current return/ground connection.
Function summary: Gate controls the conductive channel between Drain and Source; when a sufficient VGS is applied the MOSFET conducts from Drain to Source. The device also includes an intrinsic body diode between Drain and Source (tab = Drain).

Manufacturer

The IRFZ34NS is an IRF-series power MOSFET originally made by International Rectifier (IR); after IR’s 2015 acquisition it is sold under Infineon Technologies. Infineon is a global semiconductor manufacturer specializing in power semiconductors, microcontrollers and system solutions for automotive, industrial and power-management applications.

Application

IRFZ34NS is a high-current N-channel power MOSFET (55 V, ~17 A). Common application areas:
- Switching power supplies (buck/boost, flyback) and DC-DC converters
- Motor and actuator drives (DC motors, small stepper/BLDC)
- Class D audio amplifiers and other switching circuits
- Power inverters/UPS and solar charge controllers
- Automotive/industrial control circuits and solid-state relays