IRFR9N20DPBF

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IRFR9N20DPBF

MOSFET N-CH 200V 9.4A DPAK

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規格

Supplier Rochester Electronics, LLC,Infineon Technologies
Package Bulk,Tube
Series HEXFET®
ProductStatus Discontinued at Digi-Key
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 9.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 380mOhm @ 5.6A, 10V
Vgs(th)(Max)@Id 5.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 27 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 560 pF @ 25 V
PowerDissipation(Max) 86W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

概述

Description

IRFR9N20DPBF is a 200 V, 9 A N-channel HEXFET power MOSFET from International Rectifier (Infineon). It is an enhancement‑mode switch intended for power electronics switching applications such as DC–DC converters, motor drivers, and inverters. Key features include a body diode (drain–source) and aspecified on-state resistance when driven at a gate voltage (typically Vgs = 10 V). The DPBF suffix denotes a Pb‑free, RoHS‑compliant package. Thermal performance depends on package and heatsinking. Typical use involves switching or pwm control in power supplies and motor control; gate-drive requirements, safe operating area, and switching characteristics vary, so consult the datasheet for exact Vds, Id, Rds(on), Qgs/Qgd, total gate charge, and thermal data.

Features

IRFR9N20DPBF features:
- N-channel enhancement mode power MOSFET
- Vds = 200 V; Id = 9 A (continuous)
- Rds(on) ≈ 0.25–0.40 Ω (typical around 0.28 Ω) at Vgs = 10 V
- Vgs(th) typically 2–4 V
- Fast switching with low gate charge
- Intrinsic body diode; avalanche energy rating
- Pb-free RoHS-compliant (DPBF package)
- DPAK/TO-252-style surface-mount package
- Wide operating temperature range (typically -55°C to +150°C)

Package

The IRFR9N20DPBF is supplied in a DPAK (TO‑252) surface‑mount package — a 3‑lead, molded SMD package. The "PBF" indicates Pb‑free / RoHS compliance.

Pinout

IRFR9N20DPBF is an N‑channel power MOSFET in a DPAK/TO‑252 style SMD package. It has three pins plus an exposed metal tab (the tab is electrically the drain).
Typical pinout (looking at the part with the leads toward you, flat face up):
- Pin 1: Gate — control terminal (voltage input)
- Pin 2: Drain — main power terminal (also connected to the exposed tab)
- Pin 3: Source — return/reference terminal
So electrical terminals: Gate, Drain (tab), Source.

Manufacturer

The IRFR9N20DPBF is manufactured under the International Rectifier (IR) brand, which is now part of Infineon Technologies AG. International Rectifier/Infineon is a semiconductor company specializing in power semiconductors and power-management devices (e.g., MOSFETs, IGBTs, drivers).

Application

IRFR9N20DPBF is a 200 V, 9 A N-channel HEXFET MOSFET (Pb-free). Applications:
- Offline/high-voltage switch-mode power supplies (flyback/buck/boost)
- DC motor/servo/stepper drive circuits
- Solar inverters, battery chargers, UPS/inverter stages
- Automotive and industrial power electronics (DC-DC converters, motor control)
- General-purpose high-voltage switching in compact power circuits

Equivalent

Do you need exact pin-for-pin drop-in replacements or just parts with similar VDS/ID/RDS(on)/package? Tell me the required VDS, ID, RDS(on) and package (e.g., DPAK/TO-220) and I’ll list exact equivalent parts.

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