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IRFR6215TRPBF
IRFR6215 - 20V-250V P-CHANNEL PO
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- 包 TO-252-3
- 資料表 IRFR6215TRPBF DataSheet
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規格
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 295mOhm @ 6.6A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 66 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 860 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
概述
Description
IRFR6215TRPBF is a high-performance N-channel MOSFET designed for a variety of applications, including power management and switching solutions. It features low on-resistance and fast switching capabilities, making it suitable for efficient operation in DC-DC converters, power supplies, and motor control systems. The device is housed in a compact package, which aids in space-saving designs.
Key specifications typically include a maximum drain-source voltage (V_DS), a specified continuous drain current (I_D), and low gate threshold voltage (V_GS). Its thermal performance is enhanced by the ability to dissipate heat effectively, allowing for reliable operation in demanding environments.
Overall, IRFR6215TRPBF is ideal for engineers seeking efficient and reliable MOSFET solutions for modern electronic designs.
Key specifications typically include a maximum drain-source voltage (V_DS), a specified continuous drain current (I_D), and low gate threshold voltage (V_GS). Its thermal performance is enhanced by the ability to dissipate heat effectively, allowing for reliable operation in demanding environments.
Overall, IRFR6215TRPBF is ideal for engineers seeking efficient and reliable MOSFET solutions for modern electronic designs.
Features
The IRFR6215TRPBF is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, allowing for use in low-voltage applications.
2. Current Rating: The MOSFET can handle continuous drain current (I_D) of up to 62A, making it suitable for high-current scenarios.
3. R_DS(on): It offers a low on-resistance of about 0.016 ohms, which contributes to reduced power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically between 2.0V to 4.0V, allowing for efficient control with standard logic levels.
5. Package: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The device is designed for fast switching applications, making it ideal for power management and converter circuits.
Overall, the IRFR6215TRPBF is a robust choice for applications requiring efficient power switching in compact designs.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, allowing for use in low-voltage applications.
2. Current Rating: The MOSFET can handle continuous drain current (I_D) of up to 62A, making it suitable for high-current scenarios.
3. R_DS(on): It offers a low on-resistance of about 0.016 ohms, which contributes to reduced power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically between 2.0V to 4.0V, allowing for efficient control with standard logic levels.
5. Package: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The device is designed for fast switching applications, making it ideal for power management and converter circuits.
Overall, the IRFR6215TRPBF is a robust choice for applications requiring efficient power switching in compact designs.
Package
The IRFR6215TRPBF is packaged in a TO-220 format. This type of package is designed for power applications, providing efficient heat dissipation and ease of mounting on heatsinks.
Pinout
The IRFR6215TRPBF is a N-channel MOSFET with a total of 8 pins. Its primary function is to act as a switch or amplifier in various electronic applications, particularly in power management and motor control. The device features low on-resistance and fast switching capabilities, making it suitable for high-efficiency applications.
The pin configuration is as follows:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Drain (D)
5. Source (S)
6. Gate (G)
7. Source (S)
8. Drain (D)
For specific applications, it’s essential to consult the datasheet for detailed electrical characteristics and operational guidelines.
The pin configuration is as follows:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Drain (D)
5. Source (S)
6. Gate (G)
7. Source (S)
8. Drain (D)
For specific applications, it’s essential to consult the datasheet for detailed electrical characteristics and operational guidelines.
Manufacturer
The IRFR6215TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, sensors, and automotive electronics. The company is known for its high-performance products used in various applications, such as industrial, automotive, and consumer electronics. Infineon is a leading player in the semiconductor industry, focusing on innovation and sustainability.
Application
The IRFR6215TRPBF is an N-channel MOSFET used in various applications, including power management, DC-DC converters, power supplies, motor drives, and inverters. Its low on-resistance and high-speed switching capabilities make it suitable for efficient energy conversion and amplification in industrial, automotive, and consumer electronics.
Equivalent
The IRFR6215TRPBF is an N-channel MOSFET. Equivalent products include the IRF3205, IPP50R190P6, and STP55NF06. Always check datasheets for characteristics such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.
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