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IRFR5410PBF
MOSFET P-CH 100V 13A DPAK
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- 製造商。 部分 #IRFR5410PBF
- 包 TO-252-3
- 資料表 IRFR5410PBF DataSheet
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規格
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 205mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 58 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 760 pF @ 25 V |
| PowerDissipation(Max) | 66W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
概述
Description
IRFR5410PBF is a part of the International Rectifier Family of products, specifically a power MOSFET device. Designed for high-efficiency switching applications, this component is suitable for use in power management, motor control, and DC-DC conversion systems. Its features often include low on-resistance, fast switching speeds, and thermal stability, making it ideal for applications that require reliable power handling. The "PBF" designation typically indicates that the part is lead-free, adhering to environmental regulations like RoHS. This makes it suitable for use in a variety of industries, including consumer electronics, automotive, and industrial automation, where reliability and efficiency are crucial. Always consult the specific datasheet for detailed electrical characteristics and application notes.
Features
The IRFR5410PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The continuous drain current (I_D) is up to 33A, allowing it to handle significant loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient drive with lower control voltages.
5. Package Type: Available in a TO-220 package, it facilitates easy thermal management and mounting.
6. Fast Switching Speed: Its design is optimized for rapid turn-on and turn-off, enhancing performance in switching applications.
These features make the IRFR5410PBF suitable for a wide range of applications, including power supplies, motor drivers, and other power management systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The continuous drain current (I_D) is up to 33A, allowing it to handle significant loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient drive with lower control voltages.
5. Package Type: Available in a TO-220 package, it facilitates easy thermal management and mounting.
6. Fast Switching Speed: Its design is optimized for rapid turn-on and turn-off, enhancing performance in switching applications.
These features make the IRFR5410PBF suitable for a wide range of applications, including power supplies, motor drivers, and other power management systems.
Package
The IRFR5410PBF is available in a TO-220 package type. This packaging is designed for efficient heat dissipation and ease of mounting on heatsinks, making it suitable for power applications.
Pinout
The IRFR5410PBF is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is the terminal through which the main current flows. It connects to the load.
3. Source (S): This terminal is connected to ground or the negative side of the circuit. It completes the circuit when the MOSFET is turned on.
4. Body (B): The body diode is inherent within the MOSFET structure, allowing current to flow from the drain to the source when the device is reverse-biased.
The IRFR5410PBF is designed for applications that require high-speed switching and low on-resistance, commonly used in power electronics, motor control, and other high-power applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is the terminal through which the main current flows. It connects to the load.
3. Source (S): This terminal is connected to ground or the negative side of the circuit. It completes the circuit when the MOSFET is turned on.
4. Body (B): The body diode is inherent within the MOSFET structure, allowing current to flow from the drain to the source when the device is reverse-biased.
The IRFR5410PBF is designed for applications that require high-speed switching and low on-resistance, commonly used in power electronics, motor control, and other high-power applications.
Manufacturer
The IRFR5410PBF is manufactured by Infineon Technologies AG, a leading global semiconductor company. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, which are utilized in automotive, industrial, and consumer electronics applications. The company is known for its focus on innovation and sustainability, providing products that enhance energy efficiency and performance across various sectors. Infineon is headquartered in Neubiberg, Germany, and operates worldwide, contributing significantly to advancements in electric mobility, energy management, and IoT (Internet of Things).
Application
The IRFR5410PBF is a N-channel MOSFET primarily used in power management applications. Its areas of application include DC-DC converters, motor drives, power inverters, and switching power supplies. It's also utilized in consumer electronics, automotive systems, and industrial control systems due to its high efficiency and fast switching capabilities.
Equivalent
The IRFR5410PBF is a N-channel MOSFET. Equivalent products include the STP55NF06, FQP30N06L, and BSS138. When selecting an equivalent, ensure that voltage ratings, current ratings, and R_DS(on) are comparable to ensure proper performance in your application. Always check the datasheets for specific requirements.
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