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IRFR3806
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- 製造商。 部分 #IRFR3806
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- 資料表 IRFR3806 DataSheet
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規格
| Brand | Infineon / IR |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | DPAK-3 (TO-252-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 43 A |
| Rds On - Drain-Source Resistance | 15.8 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 71 W |
| Channel Mode | Enhancement |
| Configuration | Single |
| Fall Time | 47 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Rise Time | 40 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 49 ns |
| Typical Turn-On Delay Time | 6.3 ns |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
概述
Description
IRFR3806 is typically an advanced course focused on International Relations and Foreign Relations, often offered at the undergraduate or graduate level. The course aims to provide students with a comprehensive understanding of global political dynamics, key theories of international relations, and the role of various actors, including states, international organizations, and non-state entities.
Key topics often covered in IRFR3806 may include the history of international relations, theories such as realism, liberalism, and constructivism, as well as contemporary issues like globalization, security, diplomacy, and international law. Students are encouraged to analyze case studies and engage in critical discussions about current events and policymaking processes.
The course typically emphasizes the development of analytical skills, enabling students to assess the complexities of international affairs and understand the implications of foreign policy decisions. Overall, IRFR3806 serves as a foundational platform for students interested in careers in diplomacy, international organizations, or related fields.
Key topics often covered in IRFR3806 may include the history of international relations, theories such as realism, liberalism, and constructivism, as well as contemporary issues like globalization, security, diplomacy, and international law. Students are encouraged to analyze case studies and engage in critical discussions about current events and policymaking processes.
The course typically emphasizes the development of analytical skills, enabling students to assess the complexities of international affairs and understand the implications of foreign policy decisions. Overall, IRFR3806 serves as a foundational platform for students interested in careers in diplomacy, international organizations, or related fields.
Features
The IRFR3806 is a N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Rated for a drain-source voltage (V_DS) of 40V, making it suitable for low to medium voltage applications.
2. Continuous Drain Current: Supports a maximum continuous drain current (I_D) of 90A, allowing for significant power handling capability.
3. R_DS(on): Low on-resistance of approximately 0.0085 ohms at 10V gate drive, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: Gate threshold (V_GS(th)) typically ranges from 1V to 2.5V, allowing for compatibility with low-voltage control signals.
5. Fast Switching Speed: Optimized for high-speed switching applications, improving overall system performance.
6. Package Type: Available in TO-220 and D2PAK packages, facilitating heat dissipation and integration into various designs.
These features make the IRFR3806 suitable for applications in power supplies, motor drivers, and DC-DC converters.
1. Voltage Rating: Rated for a drain-source voltage (V_DS) of 40V, making it suitable for low to medium voltage applications.
2. Continuous Drain Current: Supports a maximum continuous drain current (I_D) of 90A, allowing for significant power handling capability.
3. R_DS(on): Low on-resistance of approximately 0.0085 ohms at 10V gate drive, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: Gate threshold (V_GS(th)) typically ranges from 1V to 2.5V, allowing for compatibility with low-voltage control signals.
5. Fast Switching Speed: Optimized for high-speed switching applications, improving overall system performance.
6. Package Type: Available in TO-220 and D2PAK packages, facilitating heat dissipation and integration into various designs.
These features make the IRFR3806 suitable for applications in power supplies, motor drivers, and DC-DC converters.
Package
The IRFR3806 is typically available in a TO-220 package type. This package is known for its robust thermal performance and is commonly used in power applications.
Pinout
The IRFR3806 is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET from the load. It connects to the positive side of the power supply or load.
3. Source (S): This pin is the exit point for the current that flows out of the MOSFET. It typically connects to ground or the negative side of the circuit.
The IRFR3806 is designed for high-efficiency applications, featuring low on-resistance and fast switching capabilities, suitable for power management and switching power supplies.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET from the load. It connects to the positive side of the power supply or load.
3. Source (S): This pin is the exit point for the current that flows out of the MOSFET. It typically connects to ground or the negative side of the circuit.
The IRFR3806 is designed for high-efficiency applications, featuring low on-resistance and fast switching capabilities, suitable for power management and switching power supplies.
Manufacturer
The IRFR3806 is manufactured by Infineon Technologies AG, a major global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, serving various industries including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors, microcontrollers, and sensors, making it a key player in the development of technologies for energy efficiency and connectivity. Infineon focuses on innovation and sustainability, contributing to advancements in electric mobility, renewable energy, and smart infrastructure.
Application
The IRFR3806 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and switching power supplies. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and consumer electronics, particularly in circuits requiring fast switching and high-current capabilities.
Equivalent
The IRFR3806 is an N-channel MOSFET. Equivalent products include:
1. STP16NF06 - STMicroelectronics
2. FQP30N06L - ON Semiconductor
3. AOD4184 - AO Semiconductor
4. NTP30N06 - ON Semiconductor
Always verify specifications like voltage, current, and R_DS(on) for compatibility in your application.
1. STP16NF06 - STMicroelectronics
2. FQP30N06L - ON Semiconductor
3. AOD4184 - AO Semiconductor
4. NTP30N06 - ON Semiconductor
Always verify specifications like voltage, current, and R_DS(on) for compatibility in your application.
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