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IRFR3709ZTRPBF

Name: IRFR3709ZTRPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 30V 86A DPAK

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規格

Supplier	Infineon Technologies
Package	Tape & Reel (TR),Cut Tape (CT)
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	30 V
Current-ContinuousDrain(Id)@25°C	86A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	6.5mOhm @ 15A, 10V
Vgs(th)(Max)@Id	2.25V @ 250µA
GateCharge(Qg)(Max)@Vgs	26 nC @ 4.5 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	2330 pF @ 15 V
PowerDissipation(Max)	79W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D-Pak

概述

Description

IRFR3709ZTRPBF is an N-channel enhancement-mode power MOSFET from International Rectifier (now Infineon). It is used as a high-speed switching device in power electronics, such as DC-DC converters, motor drivers, and load switches. The device offers low on-resistance and fast switching for efficient operation and comes in a Pb-free, tape-and-reel (TRPBF) surface-mount package. The “Z” variant denotes a specific device version, while “TRPBF” indicates Pb-free packaging for automated assembly. For exact ratings (Vds, Id, Rds(on), gate charge), thermal data, and safe-operating-area limits, refer to the official datasheet.

Features

IRFR3709ZTRPBF is an N-channel enhancement-mode power MOSFET. Key features:
- Vds: 30 V (max)
- Low Rds(on): on the order of tens of milliohms (values depend on Vgs)
- High continuous and pulsed current capability
- Fast switching with moderate gate charge
- Integrated body diode and rugged avalanche capability
- Pb-free, RoHS-compliant, Tape & Reel packaging (TRP)
- Wide operating temperature range (-55°C to 150°C)
Note: exact Rds(on), Id, and switching specs are in the datasheet; refer for precise numbers.

Package

D2PAK (TO-263) surface-mount package, Pb-free (RoHS), Tape & Reel.

Pinout

IRFR3709ZTRPBF is an N‑channel enhancement‑mode power MOSFET with three electrical terminals: Gate, Drain and Source. In common power packages the metal mounting tab is electrically tied to the Drain, so the device presents 3 pins plus the tab (Gate = control, Drain = power input/output, Source = return). Typical function: low‑RDS(on) switching/rectification in power management and motor/relay drive applications.

Manufacturer

Manufacturer: Infineon Technologies (the IRF-series parts were originally from International Rectifier, which Infineon acquired).
What kind of company: Infineon is a German multinational semiconductor manufacturer specializing in power semiconductors, microcontrollers, sensors and security ICs for automotive, industrial, and consumer applications.

Application

IRFR3709ZTRPBF is an N-channel enhancement-mode power MOSFET. Common applications include:
- Switch-mode power supplies and DC-DC converters
- General SMPS/high-speed switching circuits
- Motor control (BLDC/DC motors) and drivers
- Automotive and battery-powered electronics
- Solar inverters and energy-management systems
- High-side/low-side load switches and protection circuits
- Power management in consumer and industrial equipment

Equivalent

Direct equivalents are the same MOSFET in other packaging/lead‑free variants: IRFR3709Z (base device), IRFR3709ZPBF (Pb‑free), IRFR3709ZTR / IRFR3709ZTRPBF (tape‑and‑reel Pb‑free). For cross‑replacement, choose an N‑channel MOSFET with matching VDS, ID and RDS(on) (check datasheets) — common alternatives are similarly specified IRF/IRL series parts from Infineon/ON Semi or equivalents from STMicro, Vishay and Alpha & Omega.