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IRFP4768PBF

Name: IRFP4768PBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 250V 93A TO247AC

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資料表 IRFP4768PBF DataSheet
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規格

Series	HEXFET®
Part Status	Last Time Buy
Base Product Number	IRFP4768
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	17.5mOhm @ 56A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10880 pF @ 50 V
Power Dissipation (Max)	520W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package	TO-247-3
Packaging	Tube

概述

Description

The IRFP4768PBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency applications. It is part of the International Rectifier’s family of power MOSFETs and is characterized by its high voltage and current ratings. With a maximum drain-source voltage (Vds) of 55V and a continuous drain current (Id) of up to 75A, it is suitable for power management, motor control, and other switching applications.
Key features include low on-resistance (Rds(on)), which enhances efficiency by reducing power losses during operation, and fast switching speeds, making it ideal for applications that require rapid on/off cycling. The package type is typically TO-220 or similar, allowing for effective heat dissipation.
The IRFP4768PBF is also RoHS compliant, indicating that it meets environmental regulations regarding hazardous substances. Overall, it is a reliable choice for designers looking to incorporate high-performance MOSFETs into their electronic circuits.

Features

The IRFP4768PBF is an N-channel MOSFET with the following key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle high voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 60A, making it suitable for high-current applications.
3. Low R_DS(on): It has a low on-resistance (R_DS(on)) of approximately 0.022 ohms, resulting in reduced conduction losses and improved efficiency.
4. Fast Switching: The device supports fast switching speeds, beneficial for applications in power management and switching power supplies.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges between 2V to 4V, which allows for easy drive and control.
6. Package Type: It is available in a TO-220 package, which provides efficient heat dissipation.
7. Applications: Commonly used in power inverters, motor control, and other high-speed switching applications.
These features make the IRFP4768PBF ideal for various power electronics applications.

Package

The IRFP4768PBF is packaged in a TO-220 form factor. This package type is designed for high-power applications, offering excellent thermal performance and ease of mounting on heat sinks.

Pinout

The IRFP4768PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is connected to the load. When the MOSFET is on, it allows current to flow from the drain to the source.
3. Source (S): This pin is typically connected to ground in a common-source configuration. It serves as the reference point for the MOSFET’s operation.
The IRFP4768PBF is designed for high-efficiency applications, with a maximum continuous drain current of 49 A and a maximum drain-source voltage of 70 V. It features low on-resistance and fast switching characteristics, making it suitable for power conversion and drive applications.

Manufacturer

The IRFP4768PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in developing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on applications in automotive, industrial power control, and security technologies, providing innovative products that enhance efficiency and reliability in various electronic systems. Infineon is headquartered in Neubiberg, Germany, and operates globally, serving diverse markets with advanced technology and engineering expertise.

Application

The IRFP4768PBF is a high-performance N-channel MOSFET used primarily in power management applications, such as DC-DC converters, motor drivers, and switch-mode power supplies. Its features make it suitable for automotive, industrial, and renewable energy systems. Additionally, it is utilized in applications requiring high efficiency and fast switching speeds, such as audio amplifiers and RF amplifiers.

Equivalent

The IRFP4768PBF is an N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and PSMN2R8-80BS. Always verify specifications such as voltage, current ratings, and Rds(on) to ensure compatibility for your specific application.