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IRFP450PBF
NCHAN, TO-247AC, 500V, 14A IRFP4
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規格
| Package | Box |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 400mOhm @ 8.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2600 pF @ 25 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概述
Description
The IRFP450PBF is an N-channel power MOSFET designed for high-voltage and high-current applications, commonly used in power supply circuits, motor drives, and power inverters. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of up to 9.2A, making it suitable for demanding environments.
With a low on-resistance (R_DS(on)) of around 0.55 ohms, it ensures efficient power management and reduced heat generation during operation. The device is housed in a TO-220 package, allowing for effective heat dissipation.
Its fast switching capabilities enhance performance in high-frequency applications, contributing to improved efficiency. The IRFP450PBF is also RoHS-compliant, ensuring it meets environmental safety standards. Overall, its robust specifications make it a popular choice for engineers looking to implement reliable and efficient designs in various electronic applications.
With a low on-resistance (R_DS(on)) of around 0.55 ohms, it ensures efficient power management and reduced heat generation during operation. The device is housed in a TO-220 package, allowing for effective heat dissipation.
Its fast switching capabilities enhance performance in high-frequency applications, contributing to improved efficiency. The IRFP450PBF is also RoHS-compliant, ensuring it meets environmental safety standards. Overall, its robust specifications make it a popular choice for engineers looking to implement reliable and efficient designs in various electronic applications.
Features
The IRFP450PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: 500V maximum drain-to-source voltage (V_DS).
- Current Rating: Up to 9.2A continuous drain current (I_D) at 25°C.
- On-Resistance: Low R_DS(on) of approximately 0.55 ohms, which minimizes conduction losses.
- Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, making it suitable for logic-level drive.
- Package: Available in a TO-220 package, facilitating heat dissipation.
- Fast Switching: Designed for rapid switching applications, beneficial for PWM and high-frequency circuits.
- Thermal Resistance: Low thermal resistance for enhanced thermal performance.
These features make the IRFP450PBF ideal for applications in power supplies, motor drives, and other high-voltage environments requiring efficiency and reliability.
- Voltage Rating: 500V maximum drain-to-source voltage (V_DS).
- Current Rating: Up to 9.2A continuous drain current (I_D) at 25°C.
- On-Resistance: Low R_DS(on) of approximately 0.55 ohms, which minimizes conduction losses.
- Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, making it suitable for logic-level drive.
- Package: Available in a TO-220 package, facilitating heat dissipation.
- Fast Switching: Designed for rapid switching applications, beneficial for PWM and high-frequency circuits.
- Thermal Resistance: Low thermal resistance for enhanced thermal performance.
These features make the IRFP450PBF ideal for applications in power supplies, motor drives, and other high-voltage environments requiring efficiency and reliability.
Package
The IRFP450PBF is packaged in a TO-220 format. This package type provides excellent thermal performance and is suitable for power applications, allowing for efficient heat dissipation.
Pinout
The IRFP450PBF is a N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This is the control terminal. A voltage applied here modulates the conductivity between the drain and source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET. It connects to the load.
3. Source (S): This terminal is where the current enters the MOSFET. It connects to the ground or the lower potential in the circuit.
The IRFP450PBF is designed for high-speed switching and can handle high voltages up to 500V and currents up to 50A, making it suitable for applications in power supplies, motor drives, and other high-power electronic circuits.
1. Gate (G): This is the control terminal. A voltage applied here modulates the conductivity between the drain and source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET. It connects to the load.
3. Source (S): This terminal is where the current enters the MOSFET. It connects to the ground or the lower potential in the circuit.
The IRFP450PBF is designed for high-speed switching and can handle high voltages up to 500V and currents up to 50A, making it suitable for applications in power supplies, motor drives, and other high-power electronic circuits.
Manufacturer
The IRFP450PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon is known for its expertise in power semiconductors, automotive electronics, and security technologies. The company designs and produces a wide range of semiconductor solutions, including transistors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. Infineon’s focus on innovation and sustainability positions it as a key player in advancing technology for a connected and energy-efficient world.
Application
The IRFP450PBF is an N-channel MOSFET commonly used in power electronics applications such as high-frequency switching power supplies, motor drives, and industrial automation. Its features make it suitable for applications requiring high voltage (up to 500V), high current (up to 50A), and efficient switching performance, including inverter circuits and renewable energy systems like solar inverters. Additionally, it is utilized in audio amplifiers and other high-power converters.
Equivalent
Equivalent products to the IRFP450PBF MOSFET include the IRFP460, STP45NF06, and FQP45N06. These alternatives have similar voltage and current ratings, making them suitable replacements depending on the specific application requirements. Always verify the datasheets for exact specifications to ensure compatibility.
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