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IRFP32N50KPBF

Name: IRFP32N50KPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 500V 32A TO247-3

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包 TO-247-3
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規格

Package	Tube
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	500 V
Current-ContinuousDrain(Id)@25°C	32A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	160mOhm @ 32A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	190 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	5280 pF @ 25 V
PowerDissipation(Max)	460W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247AC

概述

Description

The IRFP32N50KPBF is a high-voltage N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of 32A, making it suitable for high-power switching and amplification. The device has a low on-resistance (R_DS(on)) of approximately 0.22 ohms, which enhances its efficiency by reducing power loss during operation.
With a wide operating temperature range and robust thermal performance, the IRFP32N50KPBF is ideal for use in applications such as power supplies, motor control, and audio amplifiers. Its fast switching capabilities make it well-suited for high-frequency applications. Additionally, the "KPBF" designation indicates that it is RoHS compliant, ensuring it meets environmental regulations regarding hazardous substances.
Overall, the IRFP32N50KPBF is a versatile and reliable component for engineers developing high-power electronic circuits.

Features

The IRFP32N50KPF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 32A, allowing it to handle substantial loads.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of approximately 0.22 ohms at V_GS = 10V, which enhances efficiency by reducing power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling it to be driven by lower gate voltages.
5. Package: Typically available in TO-220 or similar packages, facilitating easy mounting and heat dissipation.
6. Fast Switching: Designed for quick switching applications, improving overall performance in power conversion circuits.
These characteristics make the IRFP32N50KPF suitable for applications in power supplies, motor drives, and other switching applications.

Package

The IRFP32N50KPBF is packaged in a TO-220 format. This package type is commonly used for power transistors, allowing for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The IRFP32N50K PBF is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): The gate terminal controls the MOSFET's operation. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is turned on. It connects to the load.
3. Source (S): The source terminal is the output of the MOSFET where current exits, typically connected to ground in a low-side switch configuration.
The IRFP32N50K PBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 50V and continuous drain current (I_D) of 32A. It is commonly used in power switching applications and as a switch in various electronic circuits.

Manufacturer

The IRFP32N50KPBF is manufactured by International Rectifier, which is a subsidiary of Infineon Technologies AG. International Rectifier specializes in power management and semiconductor technologies. The company focuses on the design and manufacturing of power MOSFETs, IGBTs, and other semiconductor devices used in various applications, including automotive, industrial, and consumer electronics. Infineon Technologies, the parent company, is a global leader in semiconductor solutions, emphasizing energy efficiency and connectivity.

Application

The IRFP32N50KPBF is an N-channel MOSFET primarily used in power electronics applications such as switching power supplies, DC-DC converters, motor drives, and inverters. It is suitable for high-frequency and high-voltage applications, offering efficient switching and low on-resistance. Common areas of use include industrial automation, renewable energy systems, and electric vehicles.

Equivalent

Equivalent products for the IRFP32N50KPBF MOSFET include the STP32NF50, FDP32N50, and IPB32N50. These alternatives offer similar specifications in terms of voltage and current ratings, making them suitable replacements. Always verify the specific characteristics, such as RDS(on) and gate threshold voltage, to ensure compatibility in your application.