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IRFP23N50LPBF
MOSFET N-CH 500V 23A TO247-3
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規格
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
| Power Dissipation (Max) | 370W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Base Product Number | IRFP23 |
概述
Description
The IRFP23N50LPBF is a high-performance N-channel power MOSFET designed for use in various applications, including power supplies, motor control, and high-frequency switching. With a breakdown voltage of 500V and a continuous drain current rating of 23A, it is capable of handling substantial power levels while maintaining efficiency.
This MOSFET features low on-state resistance (R_DS(on)) of 0.47Ω at V_GS = 10V, which minimizes conduction losses and enhances thermal performance. The device is optimized for fast switching speeds, making it ideal for applications requiring rapid transitions. Additionally, its built-in gate protection and robust package design contribute to reliability under challenging conditions.
The IRFP23N50LPBF is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting in various circuit configurations. It is often used in industrial and consumer electronics, where efficient power management is critical. Overall, the IRFP23N50LPBF is a versatile choice for designers seeking robust performance in high-voltage applications.
This MOSFET features low on-state resistance (R_DS(on)) of 0.47Ω at V_GS = 10V, which minimizes conduction losses and enhances thermal performance. The device is optimized for fast switching speeds, making it ideal for applications requiring rapid transitions. Additionally, its built-in gate protection and robust package design contribute to reliability under challenging conditions.
The IRFP23N50LPBF is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting in various circuit configurations. It is often used in industrial and consumer electronics, where efficient power management is critical. Overall, the IRFP23N50LPBF is a versatile choice for designers seeking robust performance in high-voltage applications.
Features
The IRFP23N50LPBF is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle up to 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It supports a continuous drain current of up to 23A, allowing for significant power handling.
3. RDS(on): The on-resistance is low (typically around 0.25 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, facilitating easy drive with logic-level signals.
5. Package Type: It is available in an TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching: The device features fast switching capabilities, making it ideal for applications like power supplies and motor drives.
7. Thermal Resistance: Low thermal resistance ensures effective heat management.
These attributes make the IRFP23N50LPBF suitable for a variety of applications, including power management, industrial automation, and renewable energy systems.
1. Voltage Rating: It can handle up to 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It supports a continuous drain current of up to 23A, allowing for significant power handling.
3. RDS(on): The on-resistance is low (typically around 0.25 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, facilitating easy drive with logic-level signals.
5. Package Type: It is available in an TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching: The device features fast switching capabilities, making it ideal for applications like power supplies and motor drives.
7. Thermal Resistance: Low thermal resistance ensures effective heat management.
These attributes make the IRFP23N50LPBF suitable for a variety of applications, including power management, industrial automation, and renewable energy systems.
Package
The IRFP23N50LPBF is typically packaged in a TO-220 form factor. This package type is designed for high-power applications, providing efficient heat dissipation and ease of mounting to heatsinks.
Pinout
The IRFP23N50LPBF is a N-channel MOSFET used primarily in power applications. It has a total of 3 pins. Here’s the pin function:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to turn on or off based on the input voltage. Applying a sufficient positive voltage relative to the source turns the device on.
2. Drain (D): This is the pin where the current enters the MOSFET when it is in the 'on' state. The drain is connected to the load in a typical application.
3. Source (S): This pin is where current exits the MOSFET. It is typically connected to ground in low-side switch configurations.
The IRFP23N50LPBF has a voltage rating of 500V and a continuous current rating of 23A, making it suitable for high voltage applications.
1. Gate (G): This pin controls the MOSFET's operation, allowing it to turn on or off based on the input voltage. Applying a sufficient positive voltage relative to the source turns the device on.
2. Drain (D): This is the pin where the current enters the MOSFET when it is in the 'on' state. The drain is connected to the load in a typical application.
3. Source (S): This pin is where current exits the MOSFET. It is typically connected to ground in low-side switch configurations.
The IRFP23N50LPBF has a voltage rating of 500V and a continuous current rating of 23A, making it suitable for high voltage applications.
Manufacturer
The IRFP23N50LPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in the development and production of a wide range of semiconductor solutions. The company focuses on automotive, industrial power control, and security technologies, providing products that enhance efficiency, reliability, and safety in various applications. Infineon is known for its innovation in power semiconductors, microcontrollers, and sensor technologies, catering to markets such as automotive, industrial, and consumer electronics. Their products, including the IRFP23N50LPBF, are widely used in power management applications.
Application
The IRFP23N50LPBF is a high-voltage N-channel MOSFET used in various applications including power supplies, motor drives, and industrial equipment. It is suitable for switching and amplification in DC-DC converters, inverters, and audio amplifiers due to its low on-resistance and high-speed switching capabilities. Additionally, it can be used in automotive applications and renewable energy systems like solar inverters.
Equivalent
The IRFP23N50LPBF is a N-channel MOSFET with a 500V, 23A rating. Equivalent alternatives include:
1. STP23NM50
2. FQA23N50
3. MTP23N50
4. IXFH23N50
Always verify specifications like voltage, current, R_DS(on), and package type to ensure compatibility in your application.
1. STP23NM50
2. FQA23N50
3. MTP23N50
4. IXFH23N50
Always verify specifications like voltage, current, R_DS(on), and package type to ensure compatibility in your application.
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