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IRFP054NPBF

Name: IRFP054NPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 55V 81A TO247AC

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資料表 IRFP054NPBF DataSheet
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規格

Series	HEXFET®
Part Status	Not For New Designs
Base Product Number	IRFP054
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	81A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12mOhm @ 43A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 25 V
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package	TO-247-3
Packaging	Tube

概述

Description

The IRFP054NPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It is characterized by low on-resistance (R_DS(on)), which results in reduced power loss and improved efficiency in switching applications. This MOSFET features a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of up to 50A, making it suitable for high-voltage and high-current applications.
The IRFP054NPBF is commonly used in power management systems, motor drives, and DC-DC converters. Its fast switching capabilities enable efficient operation in pulse-width modulation (PWM) applications. The device is packaged in a TO-220 form factor, facilitating heat dissipation and ease of handling in circuit designs. Additionally, the "NPBF" suffix indicates that the device is lead-free, aligning with RoHS compliance for environmental safety. Overall, the IRFP054NPBF MOSFET is a reliable choice for designers seeking efficient power solutions.

Features

The IRFP054NPBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various applications requiring moderate voltage levels.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 50A, providing robust performance in power management.
3. R_DS(on): The on-resistance is low (typically around 0.022 ohms), which reduces power loss and improves thermal performance during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy driving with standard logic levels.
5. Package: It is available in a TO-220 package, providing good thermal dissipation capabilities and ease of mounting.
6. Fast Switching: The device offers fast switching speeds, making it suitable for applications like motor control, power supplies, and DC-DC converters.
Overall, the IRFP054NPBF is ideal for efficient power switching applications.

Package

The IRFP054NPBF is packaged in a TO-220 format. This package type is designed for high-power applications, providing good thermal performance and ease of heat dissipation.

Pinout

The IRFP054NPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): The control terminal used to turn the MOSFET on and off. It requires a voltage to allow current to flow between the drain and source.

2. Drain (D): The terminal through which the main current flows out of the MOSFET when it is in the on state.

3. Source (S): The terminal where the current enters the MOSFET when it is conducting.
This MOSFET is widely used in power applications due to its high efficiency and capability to handle significant voltage and current levels. Its key specifications include a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of 94A.

Manufacturer

The IRFP054NPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon, headquartered in Munich, Germany, specializes in semiconductor solutions that enable efficient energy management, smart mobility, and secure communication. The company focuses on various sectors, including automotive, industrial power control, and secure transaction technologies. Infineon is recognized for its innovation and contributions to the development of power semiconductor devices, such as MOSFETs, which are widely used in electronic applications for their efficiency and thermal performance.

Application

The IRFP054NPBF is an N-channel MOSFET commonly used in power applications. Its primary application areas include:
1. DC-DC Converters - for efficient voltage regulation.
2. Motor Drives - in industrial and automotive systems.
3. Power Amplifiers - in audio and RF applications.
4. Switching Power Supplies - for optimal energy conversion.
5. Inverters - in renewable energy systems like solar panels.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.

Equivalent

The IRFP054NPBF is a N-channel MOSFET known for high voltage and current handling. Equivalent products include:
1. IRF320
2. IRF240
3. STP55NF06
4. FQP50N06
5. PS600P
Always verify specifications such as voltage, current, RDS(on), and package type before substitution.