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IRFHS9301TRPBF
MOSFET P-CH 30V 6A/13A 6PQFN
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規格
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Ta), 13A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 37mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 580 pF @ 25 V |
| PowerDissipation(Max) | 2.1W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 6-PQFN (2x2) |
概述
Description
IRFHS9301TRPBF appears to be a reference code or identifier that does not have publicly available information or recognition in widely known contexts. It may relate to a specific product, initiative, research project, or database within a specialized field. To provide a more detailed introduction, it would be essential to clarify the context or domain it pertains to, such as whether it is related to healthcare, technology, or another discipline. Please provide additional context or details for a more tailored response.
Features
The IRFHS9301TRPBF is a high-speed, N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of around 30V, suitable for low-voltage applications.
2. Current Capacity: It can handle a continuous drain current (I_D) of approximately 30A, making it effective for high-current applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, usually in the range of a few milliohms, which minimizes power losses during operation.
4. Fast Switching Speed: Designed for high-speed switching, it enhances efficiency in applications such as DC-DC converters and motor drivers.
5. Thermal Performance: It features a robust thermal performance with a suitable package that aids in heat dissipation.
6. Applications: Commonly used in power supplies, motor control, and automotive electronics.
Overall, the IRFHS9301TRPBF is suitable for demanding environments requiring reliable high-speed switching and efficient power management.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of around 30V, suitable for low-voltage applications.
2. Current Capacity: It can handle a continuous drain current (I_D) of approximately 30A, making it effective for high-current applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, usually in the range of a few milliohms, which minimizes power losses during operation.
4. Fast Switching Speed: Designed for high-speed switching, it enhances efficiency in applications such as DC-DC converters and motor drivers.
5. Thermal Performance: It features a robust thermal performance with a suitable package that aids in heat dissipation.
6. Applications: Commonly used in power supplies, motor control, and automotive electronics.
Overall, the IRFHS9301TRPBF is suitable for demanding environments requiring reliable high-speed switching and efficient power management.
Package
The IRFHS9301TRPBF is packaged in a TO-220 package type. This package provides effective heat dissipation and is commonly used for power devices.
Pinout
The IRFHS9301TRPBF is a N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G): The control terminal that regulates the flow of current from the drain to the source.
2. Drain (D): The terminal where the current exits the MOSFET.
3. Source (S): The terminal where current enters the MOSFET.
This device is designed for high-speed switching applications, featuring low on-resistance and high efficiency. It is commonly used in power management circuits, DC-DC converters, and automotive applications. The IRFHS9301TRPBF is available in a surface-mount package, making it suitable for compact designs.
1. Gate (G): The control terminal that regulates the flow of current from the drain to the source.
2. Drain (D): The terminal where the current exits the MOSFET.
3. Source (S): The terminal where current enters the MOSFET.
This device is designed for high-speed switching applications, featuring low on-resistance and high efficiency. It is commonly used in power management circuits, DC-DC converters, and automotive applications. The IRFHS9301TRPBF is available in a surface-mount package, making it suitable for compact designs.
Manufacturer
The IRFHS9301TRPBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon specializes in developing products for various applications, including automotive, industrial, and consumer electronics, with a strong focus on power management, mobility, and security technologies. The company is known for its innovation in semiconductor technology, providing high-performance components such as MOSFETs, IGBTs, and other power semiconductors that support energy efficiency and advanced functionality in electronic devices. Infineon operates worldwide and plays a critical role in addressing the growing demand for efficient energy solutions and smart technologies.
Application
The IRFHS9301TRPBF is a high-voltage N-channel MOSFET primarily used in power management applications. Its applications include DC-DC converters, high-efficiency power supplies, motor drives, and battery management systems. Additionally, it is utilized in automotive systems, renewable energy systems (like solar inverters), and industrial automation due to its low on-resistance and fast switching capabilities.
Equivalent
The IRFHS9301TRPBF is a N-channel MOSFET. Equivalent products include the AON6544, BSS138, and IRF3708. Always check specific datasheets for parameters such as voltage, current ratings, and RDS(on) to ensure compatibility in your application.
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