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IRFH8330TRPBF
MOSFET N-CH 30V 17A/56A PQFN
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規格
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Ta), 56A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 6.6mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.35V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1450 pF @ 25 V |
| PowerDissipation(Max) | 3.3W (Ta), 35W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PQFN (5x6) |
概述
Description
IRFH8330TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance (R_DS(on)), which enhances energy efficiency and reduces heat generation during operation. The part is often utilized in DC-DC converters, power supplies, and other applications requiring fast switching and high current capacity. It has a maximum continuous drain current rating and can operate at high voltages, making it suitable for various industrial and consumer electronic applications. Additionally, the "TRPBF" suffix indicates that it is a RoHS-compliant device, ensuring it is free from hazardous substances. Its compact package design facilitates easy integration into circuit boards, contributing to space-saving in electronic designs.
Features
The IRFH8330TRPBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 80A, providing robust performance in power management.
3. Low R_DS(on): The device features a low on-resistance (R_DS(on)) of about 8.5 mΩ, which minimizes power loss and heat generation during operation.
4. Fast Switching: It offers fast switching capabilities, enhancing efficiency in applications like switching power supplies and motor control.
5. Package: The IRFH8330TRPBF is housed in a TO-220 package, allowing for effective thermal dissipation.
6. RoHS Compliant: It meets RoHS standards, ensuring environmental safety.
These features make the IRFH8330TRPBF suitable for applications in automotive, industrial, and consumer electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 80A, providing robust performance in power management.
3. Low R_DS(on): The device features a low on-resistance (R_DS(on)) of about 8.5 mΩ, which minimizes power loss and heat generation during operation.
4. Fast Switching: It offers fast switching capabilities, enhancing efficiency in applications like switching power supplies and motor control.
5. Package: The IRFH8330TRPBF is housed in a TO-220 package, allowing for effective thermal dissipation.
6. RoHS Compliant: It meets RoHS standards, ensuring environmental safety.
These features make the IRFH8330TRPBF suitable for applications in automotive, industrial, and consumer electronics.
Package
The IRFH8330TRPBF is packaged in a TO-220 style, which is a widely used package type for high-power applications.
Pinout
The IRFH8330TRPBF is a N-channel MOSFET with a total of 8 pins. Its pin configuration and functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the primary current flows out.
3. Source (S) - The terminal through which the primary current flows into the MOSFET.
4. Tab - Typically connected to the source for heat dissipation.
The IRFH8330TRPBF is designed for high-efficiency switching applications, with features such as low R_DS(on) and a high maximum drain-source voltage (V_DS), making it suitable for power management and conversion applications. It is commonly used in DC-DC converters, motor drives, and other power applications.
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the primary current flows out.
3. Source (S) - The terminal through which the primary current flows into the MOSFET.
4. Tab - Typically connected to the source for heat dissipation.
The IRFH8330TRPBF is designed for high-efficiency switching applications, with features such as low R_DS(on) and a high maximum drain-source voltage (V_DS), making it suitable for power management and conversion applications. It is commonly used in DC-DC converters, motor drives, and other power applications.
Manufacturer
The IRFH8330TRPBF is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer based in Germany, specializing in microelectronics and power semiconductors. The company develops products for a wide range of applications, including automotive, industrial, and consumer electronics. Infineon is known for its innovative solutions in power management, RF communication, and sensor technologies. They play a significant role in driving advancements in areas such as energy efficiency, electric mobility, and the Internet of Things (IoT).
Application
The IRFH8330TRPBF is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, battery management systems, and motor drives. Its high efficiency and fast switching capabilities make it suitable for applications such as power supplies, inverter circuits, and renewable energy systems. Additionally, it is used in consumer electronics and industrial automation for load switching and power regulation.
Equivalent
The IRFH8330TRPBF is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. IRFZ44N
3. IRF540N
4. STP75NF75
5. FQP50N06
Always check the datasheets for specific parameters like voltage, current ratings, and RDS(on) to ensure compatibility.
1. IRF3205
2. IRFZ44N
3. IRF540N
4. STP75NF75
5. FQP50N06
Always check the datasheets for specific parameters like voltage, current ratings, and RDS(on) to ensure compatibility.
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