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IRFH7085TRPBF
MOSFET N-CH 60V 100A PQFN
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | StrongIRFET™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 3.2mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 3.7V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 165 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6460 pF @ 25 V |
| PowerDissipation(Max) | 156W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PQFN (5x6) |
概述
Description
IRFH7085TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 70A, making it suitable for various applications including DC-DC converters, motor drives, and power switches. The device is characterized by low on-resistance (Rds(on)), which minimizes conduction losses and enhances thermal performance. It is housed in a TO-220 package, facilitating easy heat dissipation and mounting. With fast switching capabilities, the IRFH7085TRPBF is ideal for applications requiring rapid response times. Additionally, it incorporates built-in protection against thermal overload and has a robust gate threshold voltage, ensuring reliable operation in demanding environments. Overall, this MOSFET is a versatile choice for engineers looking to optimize power efficiency in their designs.
Features
The IRFH7085TRPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 75V, making it suitable for various power management tasks.
2. Current Rating: With a continuous drain current (ID) of up to 85A, it can handle significant loads.
3. Low RDS(on): The MOSFET boasts a low on-resistance, typically around 10.5 mΩ, which reduces power losses and improves thermal performance.
4. Fast Switching: Designed for rapid switching applications, it enhances performance in PWM and DC-DC converter circuits.
5. Thermal Performance: It features a TO-220 package for effective heat dissipation, allowing for higher power handling.
6. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1V to 2.5V, enabling efficient control with lower gate drive voltages.
These characteristics make the IRFH7085TRPBF ideal for applications in automotive, industrial, and consumer electronics power management systems.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 75V, making it suitable for various power management tasks.
2. Current Rating: With a continuous drain current (ID) of up to 85A, it can handle significant loads.
3. Low RDS(on): The MOSFET boasts a low on-resistance, typically around 10.5 mΩ, which reduces power losses and improves thermal performance.
4. Fast Switching: Designed for rapid switching applications, it enhances performance in PWM and DC-DC converter circuits.
5. Thermal Performance: It features a TO-220 package for effective heat dissipation, allowing for higher power handling.
6. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1V to 2.5V, enabling efficient control with lower gate drive voltages.
These characteristics make the IRFH7085TRPBF ideal for applications in automotive, industrial, and consumer electronics power management systems.
Package
The IRFH7085TRPBF is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The IRFH7085TRPBF is an N-channel MOSFET from Infineon Technologies. It has a total of 8 pins. The functions of these pins are as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which the current flows out.
3. Source (S) - The terminal through which the current enters.
The pin configuration allows for various applications, including power management and switching circuits. This MOSFET is designed for high-efficiency and high-speed operations, making it suitable for a variety of power applications.
For specific pin assignments and further details, refer to the datasheet provided by the manufacturer.
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which the current flows out.
3. Source (S) - The terminal through which the current enters.
The pin configuration allows for various applications, including power management and switching circuits. This MOSFET is designed for high-efficiency and high-speed operations, making it suitable for a variety of power applications.
For specific pin assignments and further details, refer to the datasheet provided by the manufacturer.
Manufacturer
The IRFH7085TRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the production of a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and security technologies. The company is renowned for its innovative products that enhance energy efficiency, safety, and connectivity in various applications, including automotive electronics, renewable energy systems, and smart devices. Infineon plays a critical role in advancing technologies that contribute to a sustainable and connected future.
Application
The IRFH7085TRPBF is a N-channel MOSFET primarily used in power management applications. Its key areas include automotive systems, power supplies, motor control, and DC-DC converters. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities, making it ideal for use in servers, telecommunications, and consumer electronics.
Equivalent
The IRFH7085TRPBF is a N-channel MOSFET. Equivalent products include the STP55NF06, BSS138, and FQP30N06L. Always verify specifications such as voltage, current, and RDS(on) before substituting. Check manufacturer datasheets for the most accurate compatibility information.
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