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IRFH7004TRPBF
IRFH7004 - 12V-300V N-CHANNEL PO
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規格
| Package | Bulk |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 1.4mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 3.9V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 194 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6419 pF @ 25 V |
| PowerDissipation(Max) | 156W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
概述
Description
IRFH7004TRPBF is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management in various applications. It features a low on-resistance, enabling reduced power loss and improved thermal performance, making it suitable for use in DC-DC converters, motor drives, and other high-efficiency power circuits. With a maximum drain-source voltage rating of 100V and a continuous drain current rating that can typically reach over 30A, this component is ideal for demanding applications where reliability and performance are crucial. The device is housed in a compact TO-220 package, facilitating easy mounting and heat dissipation. Its fast switching capabilities also enhance overall circuit performance. When designing circuits with the IRFH7004TRPBF, proper thermal management and adherence to specified ratings are vital to ensure optimal operation and longevity.
Features
The IRFH7004TRPBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for various power supply applications.
2. Current Rating: It can handle continuous drain currents up to 70A, allowing for significant power delivery.
3. Low RDS(on): With a low on-resistance (RDS(on)) typically around 7.5 mΩ at VGS = 10V, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for fast switching applications, it reduces transition losses, improving overall performance.
5. Thermal Performance: It features a TO-220 package, providing effective thermal dissipation, crucial for high-power applications.
6. Applications: Commonly used in power supplies, DC-DC converters, motor control, and other general-purpose switching applications.
Overall, the IRFH7004TRPBF is well-suited for engineers seeking reliable performance in compact designs.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for various power supply applications.
2. Current Rating: It can handle continuous drain currents up to 70A, allowing for significant power delivery.
3. Low RDS(on): With a low on-resistance (RDS(on)) typically around 7.5 mΩ at VGS = 10V, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for fast switching applications, it reduces transition losses, improving overall performance.
5. Thermal Performance: It features a TO-220 package, providing effective thermal dissipation, crucial for high-power applications.
6. Applications: Commonly used in power supplies, DC-DC converters, motor control, and other general-purpose switching applications.
Overall, the IRFH7004TRPBF is well-suited for engineers seeking reliable performance in compact designs.
Package
The IRFH7004TRPBF is packaged in a TO-220 form factor, which is a commonly used package type for power MOSFETs, providing efficient heat dissipation and ease of mounting on heat sinks.
Pinout
The IRFH7004TRPBF is a N-channel MOSFET with a pin count of 4. Its pin configuration typically includes the following:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output where the current flows to the load.
3. Source (S) - The input from which current flows into the device.
The device is designed for high-speed switching applications, such as power management and motor control. It features low on-resistance, high efficiency, and fast switching speeds, making it suitable for various applications in power systems and converters.
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output where the current flows to the load.
3. Source (S) - The input from which current flows into the device.
The device is designed for high-speed switching applications, such as power management and motor control. It features low on-resistance, high efficiency, and fast switching speeds, making it suitable for various applications in power systems and converters.
Manufacturer
The IRFH7004TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in the development and production of various semiconductor solutions, including power management, automotive electronics, and security technologies. The company serves a wide range of industries such as automotive, industrial, and consumer electronics, focusing on innovations that enhance energy efficiency and sustainability. Infineon is known for its expertise in power semiconductors, particularly in the areas of MOSFETs, IGBTs, and integrated circuits.
Application
IRFH7004TRPBF is a high-performance N-channel MOSFET used in various applications, including power management systems, DC-DC converters, motor control, and power supply circuits. Its low on-resistance and fast switching capabilities make it suitable for efficient power handling in consumer electronics, automotive applications, and industrial equipment. Additionally, it can be utilized in renewable energy systems and battery management systems for enhanced performance.
Equivalent
The IRFH7004TRPBF is a N-channel MOSFET, and equivalent products include the BSS138, IRF740, STP16NF06, and AOD440. It's essential to verify specifications such as voltage, current ratings, and package type to ensure compatibility for your application. Always consult manufacturer datasheets for detailed comparisons.
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