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IRFH5007TRPBF

Name: IRFH5007TRPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 75V 17A/100A 8PQFN

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資料表 IRFH5007TRPBF DataSheet
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規格

Series	HEXFET®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4290 pF @ 25 V
Power Dissipation (Max)	3.6W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerTDFN
Base Product Number	IRFH5007

概述

Description

IRFH5007TRPBF is a specific part number for a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-performance applications, typically in power management and switching applications. This device features low on-resistance, enabling efficient operation and minimizing power loss, which is crucial in applications like power supplies, motor drives, and automotive systems.
The "TR" in the part number indicates that it is offered in a reel packaging, suitable for automated assembly processes. Its design allows for high-speed switching capabilities, making it suitable for both high-frequency and high-efficiency applications.
IRFH5007TRPBF is also RoHS-compliant, ensuring that it adheres to environmental regulations prohibiting hazardous substances. Overall, it is an essential component in modern electronic designs that require efficient power handling and reliable performance.

Features

The IRFH5007TRPBF is a high-performance N-channel MOSFET designed for use in various applications, including DC-DC converters, power management, and motor control. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 50V, making it suitable for a wide range of power applications.

2. Current Rating: The device can handle continuous drain currents (I_D) up to 50A, allowing for efficient power delivery.
3. Low R_DS(on): It offers a low on-resistance (typically around 7.5 mΩ at V_GS = 10V), which reduces power loss and improves thermal performance.
4. Fast Switching: The IRFH5007TRPBF supports rapid switching speeds, enhancing efficiency in high-frequency applications.
5. Package Type: Housed in a TO-220 package, it provides good thermal conductivity and ease of mounting.
These features make the IRFH5007TRPBF ideal for high-efficiency, high-power applications in consumer electronics and industrial systems.

Package

The IRFH5007TRPBF is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and easy mounting on heat sinks, making it suitable for high-power applications.

Manufacturer

The IRFH5007TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, primarily for automotive, industrial, and communication applications. The company is known for its innovative technologies in areas such as power management, automotive electronics, and security solutions.

Application

The IRFH5007TRPBF is an N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and high-speed switching. Its low on-resistance and high efficiency make it suitable for use in battery-powered devices, computer power supplies, and renewable energy systems like solar inverters. Additionally, it is utilized in automotive applications for power distribution and control.

Equivalent

The IRFH5007TRPBF is a N-channel MOSFET. Equivalent products include the Vishay SiR404DP, Infineon BSC032N06LS, and Fairchild FDS6910. Make sure to check specific parameters like Rds(on), Vds, and package type to ensure compatibility.