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IRFB7437PBF

Name: IRFB7437PBF
Rating: 4.7 (12 reviews)

IRFB7437 - 12V-300V N-CHANNEL PO

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包 TO-220-3
資料表 IRFB7437PBF DataSheet
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規格

Package	Bulk
Series	HEXFET®, StrongIRFET™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	40 V
Current-ContinuousDrain(Id)@25°C	195A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	6V, 10V
RdsOn(Max)@IdVgs	2mOhm @ 100A, 10V
Vgs(th)(Max)@Id	3.9V @ 150µA
GateCharge(Qg)(Max)@Vgs	225 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	7330 pF @ 25 V
PowerDissipation(Max)	230W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

概述

Description

The IRFB7437PBF is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (Rds(on)), which minimizes power loss and improves efficiency in switching applications. With a maximum drain-source voltage (Vds) of 75V and a continuous drain current (Id) rating of 50A, it is suitable for various applications, including DC-DC converters, motor control, and power management systems.
The MOSFET is housed in a TO-220 package, facilitating easy heat dissipation and mounting for thermal management. Its fast switching capabilities make it ideal for applications requiring rapid turn-on and turn-off cycles. The IRFB7437PBF is also characterized by its ruggedness and reliability, often preferred in designs requiring durable components.
When using the IRFB7437PBF, it's important to consider gate drive requirements and thermal performance to ensure optimal operation. Compliance with RoHS standards makes it an environmentally friendly choice for modern electronic designs.

Features

The IRFB7437PBF is a high-performance N-channel MOSFET designed for various applications including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 75V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 50A, enabling it to handle significant loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS = 10V, which reduces power losses and improves efficiency.
4. Fast Switching: The device supports fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It features a maximum junction temperature of 175°C and includes a TO-220 package for effective heat dissipation.
6. Applications: Commonly used in DC-DC converters, motor drives, and other applications requiring efficient power switching.
These attributes make the IRFB7437PBF a versatile choice for engineers looking to optimize performance in power electronics.

Package

The IRFB7437PBF is packaged in a TO-220 format. This package type is commonly used for power MOSFETs, providing efficient heat dissipation and ease of mounting to heatsinks for improved thermal management.

Pinout

The IRFB7437PBF is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching; applying a voltage turns the device on.
2. Drain (D): This pin is where the load is connected; current flows out of the drain when the MOSFET is on.
3. Source (S): This pin is connected to ground or the lower potential; current flows into the source when the MOSFET is conducting.
4. Body Diode (Internal): The IRFB7437PBF has an intrinsic body diode connected between the drain and source, allowing current to flow in the reverse direction when the MOSFET is off.
Key specifications include a maximum drain-source voltage (V_DS) of 55V and a maximum continuous drain current (I_D) of 50A, making it suitable for high-efficiency switching applications.

Manufacturer

The IRFB7437PBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, sensors, and automotive electronics. Their products are widely used in various applications, such as automotive, industrial, and consumer electronics. Infineon is known for its innovations in energy efficiency and power management, making significant contributions to advancements in technology and sustainability.

Application

The IRFB7437PBF is a N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor drives, and power inverters. Its low on-resistance and high-speed switching capabilities make it suitable for various high-efficiency applications, such as renewable energy systems, electric vehicles, and industrial automation. Additionally, it is used in power supply circuits and as a switching device in consumer electronics.

Equivalent

Equivalent products to the IRFB7437PBF MOSFET include the STP80NF75, NXP's BUK7Y3R0-60, and the FQP75N60. Always check specifications like voltage, current, and RDS(on) to ensure compatibility in your specific application.