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IRFB7430PBF
MOSFET N CH 40V 195A TO220
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規格
| Package | Tube |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 195A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 1.3mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 3.9V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 460 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 14240 pF @ 25 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
The IRFB7430PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications such as power management, switching, and amplification. It features a low on-resistance (RDS(on)) to enhance efficiency and reduce heat generation, making it suitable for use in power supplies, motor drives, and DC-DC converters. The device typically supports a maximum drain-source voltage of 30V and can handle continuous currents of up to 74A, depending on the thermal management. Its fast switching capabilities and low gate charge (Qg) make it ideal for high-frequency applications. Additionally, the "PBF" suffix indicates that the product is lead-free, aligning with environmental standards. The IRFB7430PBF is widely used in various electronics and automotive applications, offering reliability and performance in demanding conditions.
Features
The IRFB7430PBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 60A, allowing for robust performance in demanding conditions.
3. Low RDS(on): It features a low on-resistance (RDS(on)) of around 5.5mΩ, which reduces conduction losses and improves efficiency.
4. Fast Switching: The device offers fast switching capabilities, which is beneficial for applications like DC-DC converters and motor drives.
5. Thermal Performance: It comes in a TO-220 package, providing effective heat dissipation and mounting options for heat sinks.
6. Gate Threshold Voltage (VGS): The threshold voltage ranges from 2V to 4V, allowing for easy drive with standard logic levels.
7. Applications: Ideal for use in power supplies, automotive applications, and industrial motor control.
Overall, the IRFB7430PBF is optimized for performance in various electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 60A, allowing for robust performance in demanding conditions.
3. Low RDS(on): It features a low on-resistance (RDS(on)) of around 5.5mΩ, which reduces conduction losses and improves efficiency.
4. Fast Switching: The device offers fast switching capabilities, which is beneficial for applications like DC-DC converters and motor drives.
5. Thermal Performance: It comes in a TO-220 package, providing effective heat dissipation and mounting options for heat sinks.
6. Gate Threshold Voltage (VGS): The threshold voltage ranges from 2V to 4V, allowing for easy drive with standard logic levels.
7. Applications: Ideal for use in power supplies, automotive applications, and industrial motor control.
Overall, the IRFB7430PBF is optimized for performance in various electronic applications.
Package
The IRFB7430PBF is packaged in a TO-220 format, which is a metal can package with three leads. This package type is designed for efficient heat dissipation and is commonly used for power MOSFET applications.
Pinout
The IRFB7430PBF is an N-channel MOSFET with a total of 8 pins. Here are the pin assignments and their functions:
1. Gate (G) - Controls the MOSFET; applies voltage to turn it on/off.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal that connects to the ground or negative side of the power supply.
4. Body Diode - Internal structure allowing current flow from the drain to the source when the MOSFET is off.
The pin configuration is typically as follows when looking at the package from the top:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pins 4-8: Additional source/drain connections or specific to the package.
This component is commonly used in power management applications, including switching power supplies and motor controls, due to its high efficiency and fast switching capabilities.
1. Gate (G) - Controls the MOSFET; applies voltage to turn it on/off.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal that connects to the ground or negative side of the power supply.
4. Body Diode - Internal structure allowing current flow from the drain to the source when the MOSFET is off.
The pin configuration is typically as follows when looking at the package from the top:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pins 4-8: Additional source/drain connections or specific to the package.
This component is commonly used in power management applications, including switching power supplies and motor controls, due to its high efficiency and fast switching capabilities.
Manufacturer
The IRFB7430PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Infineon serves various industries such as automotive, industrial, communication, and consumer electronics. They are particularly known for their innovations in power management and efficiency, providing products that enhance energy efficiency and performance in electronic systems. Infineon is considered a leader in the semiconductor market, focusing on sustainability and advanced technology solutions.
Application
The IRFB7430PBF is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and inverters. Its high efficiency and fast switching capabilities make it suitable for renewable energy systems, automotive power electronics, and industrial equipment. Additionally, it is often utilized in various consumer electronics for power supply regulation.
Equivalent
The IRFB7430PBF is a high-performance N-channel MOSFET. Equivalent products include the AUIRFB7430, IRF3205, and FQP50N60. Always check specifications such as voltage, current ratings, and RDS(on) to ensure compatibility in your specific application.
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