IRFB4110

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IRFB4110

MOSFET N-CH 100V 120A TO220AB

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規格

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Power Dissipation (Max) 370W (Tc)
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

概述

Description

IRFB4110 is a high-performance N-channel MOSFET designed for applications requiring efficient power management and switching capabilities. With a voltage rating of 100V and a continuous drain current of up to 110A, it is suitable for use in power supplies, motor drives, and other high-current applications.
Key features include low on-resistance (R_DS(on)) for reduced conduction losses, fast switching speeds, and a robust thermal performance, making it ideal for high-efficiency designs. The device typically comes in a TO-220 package, facilitating easy heat dissipation and mounting in various electronic circuits.
IRFB4110 is commonly used in industries such as automotive, industrial automation, and renewable energy systems, where reliability and efficiency are paramount. Its combination of high power handling and thermal stability makes it a popular choice among engineers for designing efficient power electronic systems.

Features

The IRFB4110 is a N-channel MOSFET widely used in various applications due to its robust performance and efficiency. Key features include:
1. High Voltage Rating: It has a maximum drain-source voltage (V_DSS) of 100V, making it suitable for high-voltage applications.
2. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 5.5 mΩ at a gate-source voltage (V_GS) of 10V, ensuring low power losses during operation.
3. Continuous Drain Current: It can handle a continuous drain current (I_D) up to 110A, allowing for significant current handling capabilities.
4. Fast Switching Speed: The device supports fast switching times, making it suitable for applications such as power converters and switching power supplies.
5. Thermal Performance: It has a maximum junction temperature (T_j) of 175°C, providing good thermal stability under heavy loads.
6. TO-220 Package: The device is available in a TO-220 package, facilitating ease of heat dissipation and mounting.
These features make the IRFB4110 ideal for applications in power management, motor control, and inverters.

Package

The IRFB4110 is typically packaged in a TO-220 form factor, which features a metal tab for heat dissipation and is designed for high-power applications.

Pinout

The IRFB4110 is a N-channel MOSFET with a total of 6 pins. The pin configuration and functions are as follows:
1. Gate (G) - This pin controls the MOSFET's switching operation.
2. Drain (D) - This is the main output pin where the current flows out.
3. Source (S) - This pin connects to the ground or negative supply in typical applications.
4. Gate-Source (GS) - This internal connection helps in controlling gate voltage.
5. Drain-Source (DS) - This is also internal and relates to the drain-source voltage.
6. Body Diode - An intrinsic diode exists between the drain and source, allowing current to flow in the reverse direction.
The IRFB4110 is commonly used in power conversion applications due to its high efficiency and low on-resistance.

Manufacturer

The IRFB4110 is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power and sensor technologies, automotive electronics, and security solutions. The company is known for its leadership in power management and efficiency, particularly in applications related to renewable energy, electric vehicles, and industrial automation. Infineon serves various sectors, including automotive, industrial, and consumer electronics, and is committed to innovation and sustainability in its product offerings.

Application

The IRFB4110 is an N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor drives, and inverters. Its high current and voltage ratings make it suitable for use in renewable energy systems, electric vehicles, and industrial power supplies. Additionally, it can be utilized in high-efficiency switching applications and as a synchronous rectifier in power supplies.

Equivalent

The IRFB4110 is a N-channel MOSFET. Equivalent products include:
1. STP75NF75 (STMicroelectronics)
2. BSS138 (Nexperia)
3. FQP75N06L (ON Semiconductor)
4. IRF320 (Infineon)
5. P75NF75 (Nexperia)
Always verify specifications such as voltage, current rating, and R_DS(on) before substituting.

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