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IRF840S
MOSFET N-CH 500V 8A D2PAK
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規格
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | IRF840 |
概述
Description
The IRF840S is a type of N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is commonly used in power management, motor control, and various other applications requiring efficient control of high currents and voltages.
Key features of the IRF840S include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 500 volts.
2. Current Rating: The continuous drain current (I_D) can be around 8 amps, depending on the specific conditions such as temperature and mounting.
3. R_DS(on): It offers a low on-state resistance, which ensures minimal power loss during operation, enhancing efficiency.
4. Package: The IRF840S typically comes in a TO-220 package, which is widely used due to its ability to handle significant power dissipation.
5. Fast Switching: Designed for high-speed operation, making it suitable for fast switching applications like inverters and power converters.
Overall, the IRF840S is valued for its reliability and efficiency in controlling high-power systems.
Key features of the IRF840S include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 500 volts.
2. Current Rating: The continuous drain current (I_D) can be around 8 amps, depending on the specific conditions such as temperature and mounting.
3. R_DS(on): It offers a low on-state resistance, which ensures minimal power loss during operation, enhancing efficiency.
4. Package: The IRF840S typically comes in a TO-220 package, which is widely used due to its ability to handle significant power dissipation.
5. Fast Switching: Designed for high-speed operation, making it suitable for fast switching applications like inverters and power converters.
Overall, the IRF840S is valued for its reliability and efficiency in controlling high-power systems.
Features
The IRF840S is an N-channel power MOSFET known for its efficiency in a variety of applications. Key features include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_ds) of up to 500V and a continuous drain current (I_d) of around 8A, making it suitable for high-voltage applications.
2. R_DS(on): It has a low on-resistance, which minimizes power loss and heat generation during operation.
3. Fast Switching: The MOSFET is designed for rapid switching speeds, enhancing performance in high-frequency applications.
4. Thermal Resistance: It offers good thermal performance, which is critical for maintaining reliability under high power conditions.
5. Package: The IRF840S often comes in TO-220 or similar packages, which facilitate easy mounting and efficient heat dissipation.
6. Applications: It is commonly used in power management, motor drivers, and high-frequency converters, among other applications.
These features make the IRF840S a versatile component in power electronics, balancing high voltage capacity, efficiency, and thermal management.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_ds) of up to 500V and a continuous drain current (I_d) of around 8A, making it suitable for high-voltage applications.
2. R_DS(on): It has a low on-resistance, which minimizes power loss and heat generation during operation.
3. Fast Switching: The MOSFET is designed for rapid switching speeds, enhancing performance in high-frequency applications.
4. Thermal Resistance: It offers good thermal performance, which is critical for maintaining reliability under high power conditions.
5. Package: The IRF840S often comes in TO-220 or similar packages, which facilitate easy mounting and efficient heat dissipation.
6. Applications: It is commonly used in power management, motor drivers, and high-frequency converters, among other applications.
These features make the IRF840S a versatile component in power electronics, balancing high voltage capacity, efficiency, and thermal management.
Package
The IRF840S is typically available in a D²PAK (also known as TO-263) package type. This package is designed for surface mounting and provides efficient thermal performance, making it suitable for high-power applications.
Pinout
The IRF840S is an N-channel power MOSFET commonly used in various electronic applications for switching and amplification purposes. It features a TO-263 package. The IRF840S typically has 3 pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the load current enters the MOSFET from the connected circuit.
3. Source (S): The source pin is the terminal through which the load current exits the MOSFET.
The IRF840S is widely utilized due to its high voltage rating, typically around 500V, and its ability to handle significant current levels, making it suitable for high-power applications. It is often found in power supply circuits, motor drivers, and other electronic systems requiring efficient switching.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the load current enters the MOSFET from the connected circuit.
3. Source (S): The source pin is the terminal through which the load current exits the MOSFET.
The IRF840S is widely utilized due to its high voltage rating, typically around 500V, and its ability to handle significant current levels, making it suitable for high-power applications. It is often found in power supply circuits, motor drivers, and other electronic systems requiring efficient switching.
Manufacturer
The IRF840S is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in products for automotive, industrial, and multimarket sectors, including power semiconductors, sensors, microcontrollers, connectivity, and security solutions. The company is known for its focus on energy efficiency, mobility, and security, offering a wide range of products that cater to various electronic applications.
Application
The IRF840S is a power MOSFET commonly used in applications such as power supplies, motor control, inverters, and DC-DC converters. Its ability to handle high voltages and currents makes it suitable for switching and amplifier circuits in industrial and consumer electronics. Additionally, it's utilized in automotive systems for controlling power distribution and in audio amplifiers for managing high power levels efficiently.
Equivalent
The IRF840S is an N-channel MOSFET. Equivalent products include the STP10NK60Z, BUZ11, and FQP12N60. These alternatives have similar voltage and current ratings. However, always verify datasheets for exact specifications and ensure compatibility with your application.
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