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IRF7910TRPBF
MOSFET 2N-CH 12V 10A 8SO
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規格
| Series | HEXFET® |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 6V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRF7910 |
概述
Description
The IRF7910TRPBF is an N-channel MOSFET designed for high-speed switching applications and power management. It features a low on-resistance (RDS(on)), allowing efficient conduction with minimal power loss, making it suitable for use in power supplies, motor control, and DC-DC converters.
Key specifications include a drain-source voltage (VDS) rating of 100V, a continuous drain current (ID) of up to 50A, and a gate threshold voltage (VGS(th)) of 2-4V, facilitating easy drive from microcontrollers or logic level signals. The device is housed in a TO-220 package, which offers good thermal performance for heat dissipation.
The IRF7910TRPBF is also RoHS-compliant, aligning with environmental regulations. Its fast switching capabilities and robust performance make it a popular choice in various electronic applications, particularly where efficiency and reliability are critical.
Key specifications include a drain-source voltage (VDS) rating of 100V, a continuous drain current (ID) of up to 50A, and a gate threshold voltage (VGS(th)) of 2-4V, facilitating easy drive from microcontrollers or logic level signals. The device is housed in a TO-220 package, which offers good thermal performance for heat dissipation.
The IRF7910TRPBF is also RoHS-compliant, aligning with environmental regulations. Its fast switching capabilities and robust performance make it a popular choice in various electronic applications, particularly where efficiency and reliability are critical.
Features
The IRF7910TRPBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium to high voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is approximately 46A, allowing it to handle significant loads.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of around 0.045 ohms, which minimizes power loss during operation.
4. Fast Switching: The device is capable of fast switching speeds, enhancing efficiency in applications like DC-DC converters and motor drives.
5. TO-220 Package: The IRF7910TRPBF comes in a TO-220 package, facilitating easy heat dissipation and mounting.
6. High-speed Operation: It supports high-frequency applications with a high gate charge specification.
7. Thermal Performance: Designed for robust thermal performance, it can operate in challenging environments.
This combination of features makes the IRF7910TRPBF ideal for power management and switching applications in various electronic systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium to high voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is approximately 46A, allowing it to handle significant loads.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of around 0.045 ohms, which minimizes power loss during operation.
4. Fast Switching: The device is capable of fast switching speeds, enhancing efficiency in applications like DC-DC converters and motor drives.
5. TO-220 Package: The IRF7910TRPBF comes in a TO-220 package, facilitating easy heat dissipation and mounting.
6. High-speed Operation: It supports high-frequency applications with a high gate charge specification.
7. Thermal Performance: Designed for robust thermal performance, it can operate in challenging environments.
This combination of features makes the IRF7910TRPBF ideal for power management and switching applications in various electronic systems.
Package
The IRF7910TRPBF is packaged in a TO-220 format, which is a type of through-hole package designed for power devices. This package type provides efficient thermal performance and is suitable for applications requiring heat dissipation.
Pinout
The IRF7910TRPBF is a N-channel MOSFET with a pin count of 6. Its primary function is to switch and amplify electronic signals in various applications, including power management and motor control.
The pins are typically configured as follows:
1. Gate (G) - Pin for controlling the MOSFET operation.
2. Drain (D) - Pin where the load is connected; current flows out from this pin when the MOSFET is on.
3. Source (S) - Pin connected to the ground or negative side of the power supply; current flows into this pin when the MOSFET is on.
4. Body Diode - Integrated diode that conducts current in the reverse direction (not a dedicated pin).
5. Two additional pins may be used for package mounting and thermal management.
The IRF7910TRPBF is designed for high-speed switching and can handle high voltage and current, making it suitable for various power electronics applications.
The pins are typically configured as follows:
1. Gate (G) - Pin for controlling the MOSFET operation.
2. Drain (D) - Pin where the load is connected; current flows out from this pin when the MOSFET is on.
3. Source (S) - Pin connected to the ground or negative side of the power supply; current flows into this pin when the MOSFET is on.
4. Body Diode - Integrated diode that conducts current in the reverse direction (not a dedicated pin).
5. Two additional pins may be used for package mounting and thermal management.
The IRF7910TRPBF is designed for high-speed switching and can handle high voltage and current, making it suitable for various power electronics applications.
Manufacturer
The IRF7910TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. Infineon is known for its innovations in power electronics, enabling efficient energy management and sustainable technologies. The IRF7910TRPBF is a high-speed N-channel MOSFET, commonly used in power conversion applications, highlighting Infineon's focus on providing advanced semiconductor solutions for various industries.
Application
The IRF7910TRPBF is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor drives. Its high efficiency and fast switching capabilities make it suitable for synchronous rectification, automotive electronics, and industrial automation systems. Additionally, it can be utilized in battery management systems and renewable energy applications, such as solar inverters.
Equivalent
The IRF7910TRPBF is an N-channel MOSFET. Equivalent products include the STP75NF75, BSS138, and FQP30N06L. Always verify specific parameters like voltage, current ratings, and on-resistance to ensure compatibility in your application.
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