IRF7907TRPBF

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IRF7907TRPBF

MOSFET 2N-CH 30V 9.1A/11A 8SO

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規格

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 9.1A, 11A
RdsOn(Max)@IdVgs 16.4mOhm @ 9.1A, 10V
Vgs(th)(Max)@Id 2.35V @ 25µA
GateCharge(Qg)(Max)@Vgs 10nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 850pF @ 15V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

概述

Description

The IRF7907TRPBF is an N-channel MOSFET designed for high-speed switching applications. It features a low on-resistance (RDS(on)), which enables efficient power management and reduces heat generation during operation. With a maximum gate-source voltage of ±20V, it can handle substantial load currents, making it suitable for various applications such as DC-DC converters, motor drivers, and power management systems.
This MOSFET has a maximum continuous drain current of around 75A and a maximum drain-source voltage of 30V, making it ideal for medium-voltage applications. Its fast switching speed helps improve the efficiency of power conversion processes, particularly in switching power supplies.
The "TRPBF" suffix indicates that it is RoHS compliant, meaning it is free from hazardous materials, which is important for environmentally conscious designs. The device is typically housed in a TO-220 package, facilitating easy heat dissipation.
Overall, the IRF7907TRPBF is a reliable choice for engineers seeking a robust and efficient MOSFET for various electronic applications.

Features

The IRF7907TRPBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 80A, allowing for robust performance in power applications.
3. R_DS(on): It features a low on-state resistance (R_DS(on)) of around 10 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes power loss and heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V and 4V, enabling efficient operation with various gate drive voltages.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: Suitable for high-frequency applications thanks to its low gate charge (Q_G) and fast switching characteristics.
These features make the IRF7907TRPBF ideal for applications in power management, motor control, and DC-DC converters.

Package

The IRF7907TRPBF is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRF7907TRPBF is a N-channel MOSFET with a total of 8 pins. Its primary functions include:
1. Gate (G) - Controls the MOSFET's switching; applies voltage to turn on/off the device.
2. Drain (D) - The terminal where the load is connected and current flows out.
3. Source (S) - The terminal through which current enters the MOSFET.
The pin configuration typically follows this layout:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pins 4-8: Not connected or used for heat dissipation, depending on the package type.
The IRF7907TRPBF is designed for high-speed switching applications, offering low on-resistance and a high current rating, making it suitable for power management and control in various electronic circuits.

Manufacturer

The manufacturer of the IRF7907TRPBF is Infineon Technologies AG. Infineon is a global leader in semiconductor solutions, specializing in power semiconductors, microcontrollers, and sensors. The company focuses on automotive, industrial, and IoT applications, providing innovative technologies to enhance energy efficiency and performance. Infineon is recognized for its commitment to sustainability and advancing the digital transformation across various sectors.

Application

The IRF7907TRPBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control circuits, and power switching. It is designed for high-efficiency applications, such as battery-powered devices, renewable energy systems, and industrial automation. Its low on-resistance and high-speed switching capabilities make it suitable for applications requiring efficient thermal management and reduced energy loss.

Equivalent

The IRF7907TRPBF is a N-channel MOSFET used in various applications. Equivalent products include the STP16NF06, FQP30N06L, and AOD6N06. When selecting alternatives, ensure the voltage, current ratings, and package type match your specific requirements. Always refer to datasheets for precise specifications.

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