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IRF7401TRPBF
MOSFET N-CH 20V 8.7A 8SO
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 8.7A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.7V, 4.5V |
| RdsOn(Max)@IdVgs | 22mOhm @ 4.1A, 4.5V |
| Vgs(th)(Max)@Id | 700mV @ 250µA (Min) |
| GateCharge(Qg)(Max)@Vgs | 48 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 1600 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
概述
Description
The IRF7401TRPBF is a dual N-channel MOSFET designed for high-speed switching applications. It features on-resistance values as low as 0.14 ohms, which allows for efficient power management in various electronic circuits. The device can handle a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 55A at 25°C, making it suitable for power supplies, motor control, and inverters.
The IRF7401TRPBF is packaged in a DPAK (TO-252) form factor, ensuring ease of integration into PCB layouts. Its low gate threshold voltage (V_GS(th)) allows for operation in low-voltage environments while maintaining reliable switching performance. The device is RoHS compliant, indicating it adheres to environmental regulations by being free from hazardous substances.
Overall, the IRF7401TRPBF is ideal for applications requiring robust performance and efficiency in power management systems.
The IRF7401TRPBF is packaged in a DPAK (TO-252) form factor, ensuring ease of integration into PCB layouts. Its low gate threshold voltage (V_GS(th)) allows for operation in low-voltage environments while maintaining reliable switching performance. The device is RoHS compliant, indicating it adheres to environmental regulations by being free from hazardous substances.
Overall, the IRF7401TRPBF is ideal for applications requiring robust performance and efficiency in power management systems.
Features
The IRF7401TRPBF is a high-speed, low-voltage MOSFET driver designed for driving large MOSFETs and IGBTs in power applications. Key features include:
1. Output Drive Capability: Capable of sourcing and sinking up to 2A, enabling fast switching.
2. Low Propagation Delay: Offers rapid turn-on and turn-off times, enhancing efficiency in switching applications.
3. Wide Supply Voltage Range: Operates from a supply voltage of 10V to 20V, suitable for various power applications.
4. Thermal Protection: Integrated thermal shutdown feature helps prevent damage due to overheating.
5. Input Compatibility: Accepts standard TTL and CMOS logic levels for easy interfacing with microcontrollers and digital circuits.
6. Compact Package: Available in a small footprint package, allowing for space-efficient designs.
This driver is commonly used in applications like DC-DC converters, motor drives, and other power management solutions.
1. Output Drive Capability: Capable of sourcing and sinking up to 2A, enabling fast switching.
2. Low Propagation Delay: Offers rapid turn-on and turn-off times, enhancing efficiency in switching applications.
3. Wide Supply Voltage Range: Operates from a supply voltage of 10V to 20V, suitable for various power applications.
4. Thermal Protection: Integrated thermal shutdown feature helps prevent damage due to overheating.
5. Input Compatibility: Accepts standard TTL and CMOS logic levels for easy interfacing with microcontrollers and digital circuits.
6. Compact Package: Available in a small footprint package, allowing for space-efficient designs.
This driver is commonly used in applications like DC-DC converters, motor drives, and other power management solutions.
Package
The IRF7401TRPBF is packaged in a Small Outline Integrated Circuit (SOIC) form factor, specifically a 14-lead SOIC package.
Pinout
The IRF7401TRPBF is a dual high-speed Schmitt-trigger inverter. It has a pin count of 14. The functions of its pins are as follows:
1. Pins 1, 2: Inputs for the first inverter.
2. Pin 3: Output for the first inverter.
3. Pins 4, 5: Inputs for the second inverter.
4. Pin 6: Output for the second inverter.
5. Pin 7: Ground (GND).
6. Pin 8: VCC (Positive supply voltage).
7. Pins 9-14: Additional features for noise immunity and high-speed operation.
This device is typically used for various digital logic applications where signal conditioning and noise suppression are needed.
1. Pins 1, 2: Inputs for the first inverter.
2. Pin 3: Output for the first inverter.
3. Pins 4, 5: Inputs for the second inverter.
4. Pin 6: Output for the second inverter.
5. Pin 7: Ground (GND).
6. Pin 8: VCC (Positive supply voltage).
7. Pins 9-14: Additional features for noise immunity and high-speed operation.
This device is typically used for various digital logic applications where signal conditioning and noise suppression are needed.
Manufacturer
The IRF7401TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its innovations in power management, communication technologies, and security solutions, making it a key player in the electronics industry.
Application
The IRF7401TRPBF is a dual N-channel MOSFET used in various applications such as power management, motor control, and switching power supplies. It is suitable for low-voltage and high-speed switching applications, making it ideal for use in automotive electronics, industrial equipment, and consumer electronics. Its fast switching capabilities and low on-resistance enhance efficiency in power conversion systems.
Equivalent
The IRF7401TRPBF is a dual high-speed CMOS Schmitt-trigger inverter. Equivalent products include the 74HC14, 74HCT14, and 74LS14. These alternatives also provide similar functionality in inverting logic levels with hysteresis. Always verify specific electrical characteristics and packaging before substitution.
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