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IRF720S
MOSFET N-CH 400V 3.3A D2PAK
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規格
| Package | Tube |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 400 V |
| Current-ContinuousDrain(Id)@25°C | 3.3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.8Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 410 pF @ 25 V |
| PowerDissipation(Max) | 3.1W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
概述
Description
The IRF720S is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a low on-resistance (R_DS(on)) and high voltage rating, making it suitable for power management in various electronic devices. With a maximum drain-source voltage (V_DS) of 75V and a continuous drain current (I_D) of up to 20A, the IRF720S is efficient for applications such as DC-DC converters, motor drivers, and switching regulators.
This MOSFET operates by applying voltage to the gate terminal, which controls the flow of current between the drain and source terminals. The IRF720S boasts fast switching speeds, making it ideal for high-frequency applications. It also features a rugged design, enabling it to withstand voltage spikes and thermal stress.
Key specifications include a low threshold voltage (V_GS(th)), ensuring it can be driven by low-voltage control signals. Its TO-220 package allows for effective heat dissipation, enhancing reliability in demanding environments. Overall, the IRF720S is a versatile component widely used in modern electronic designs requiring efficient power handling.
This MOSFET operates by applying voltage to the gate terminal, which controls the flow of current between the drain and source terminals. The IRF720S boasts fast switching speeds, making it ideal for high-frequency applications. It also features a rugged design, enabling it to withstand voltage spikes and thermal stress.
Key specifications include a low threshold voltage (V_GS(th)), ensuring it can be driven by low-voltage control signals. Its TO-220 package allows for effective heat dissipation, enhancing reliability in demanding environments. Overall, the IRF720S is a versatile component widely used in modern electronic designs requiring efficient power handling.
Features
The IRF720S is an N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, suitable for various applications.
2. Current Rating: The maximum continuous drain current (Id) is up to 9.2A at a case temperature of 25°C.
3. RDS(on): Low on-resistance of approximately 0.24 ohms, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, ensuring compatibility with low-voltage gate drive circuits.
5. Package: It is typically available in a TO-220 package, allowing for effective heat dissipation.
6. Operating Temperature: Capable of operating in a wide temperature range from -55°C to +150°C.
The IRF720S is ideal for applications such as power management, motor control, and DC-DC converters, offering reliability and performance in various electronic circuits.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, suitable for various applications.
2. Current Rating: The maximum continuous drain current (Id) is up to 9.2A at a case temperature of 25°C.
3. RDS(on): Low on-resistance of approximately 0.24 ohms, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 2V to 4V, ensuring compatibility with low-voltage gate drive circuits.
5. Package: It is typically available in a TO-220 package, allowing for effective heat dissipation.
6. Operating Temperature: Capable of operating in a wide temperature range from -55°C to +150°C.
The IRF720S is ideal for applications such as power management, motor control, and DC-DC converters, offering reliability and performance in various electronic circuits.
Package
The IRF720S is typically available in a TO-220 package type, which is a metal can package that provides efficient thermal management and is suitable for high-power applications.
Pinout
The IRF720S is an N-channel MOSFET commonly used in power applications. It features a total of 7 pins, each serving specific functions:
1. Gate (G) - Pin 1: Controls the MOSFET's on/off state.
2. Drain (D) - Pin 2: The terminal through which the current flows out when the device is on.
3. Source (S) - Pin 3: The terminal through which the current enters when the device is on.
4. Gate (G) - Pin 4: Another gate terminal for redundancy or enhanced driving capability.
5. Source (S) - Pin 5: Another source terminal, similar to pin 3.
6. Drain (D) - Pin 6: Another drain terminal, similar to pin 2.
7. Tab (T) - Pin 7: Often connected to the source and used for heat dissipation.
The IRF720S is designed for high-voltage applications, typically handling up to 500V and providing low on-resistance, making it suitable for switching and amplification tasks in various electronic circuits.
1. Gate (G) - Pin 1: Controls the MOSFET's on/off state.
2. Drain (D) - Pin 2: The terminal through which the current flows out when the device is on.
3. Source (S) - Pin 3: The terminal through which the current enters when the device is on.
4. Gate (G) - Pin 4: Another gate terminal for redundancy or enhanced driving capability.
5. Source (S) - Pin 5: Another source terminal, similar to pin 3.
6. Drain (D) - Pin 6: Another drain terminal, similar to pin 2.
7. Tab (T) - Pin 7: Often connected to the source and used for heat dissipation.
The IRF720S is designed for high-voltage applications, typically handling up to 500V and providing low on-resistance, making it suitable for switching and amplification tasks in various electronic circuits.
Manufacturer
The IRF720S is manufactured by Infineon Technologies AG, a semiconductor manufacturer based in Germany. Infineon specializes in developing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company plays a significant role in various industries, such as automotive, industrial, and consumer electronics. Infineon focuses on innovation and sustainability, aiming to provide technologies that enhance energy efficiency and improve overall system performance. As a leading global player in the semiconductor market, Infineon is known for its quality and reliability in electronic components.
Application
The IRF720S is a N-channel MOSFET commonly used in applications such as power switching, motor control, DC-DC converters, and electronic load switches. Its high voltage and current handling capabilities make it suitable for power management in industrial automation, automotive systems, and renewable energy systems. Additionally, it is employed in signal amplification and high-speed switching applications in various electronic devices.
Equivalent
The IRF720S is a N-channel MOSFET. Equivalent products include the IRF740, IRF840, and IRF530, which have similar voltage and current ratings. Other alternatives are the STP16NF06 and the FQP30N06L. Always check specific datasheets for exact specifications, as characteristics may vary.
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