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IRF7103TRPBF
MOSFET 2N-CH 50V 3A 8-SOIC
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- 包 8-SOIC
- 資料表 IRF7103TRPBF DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 50V |
| Current-ContinuousDrain(Id)@25°C | 3A |
| RdsOn(Max)@IdVgs | 130mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 290pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
The IRF7103TRPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)), which minimizes power loss during operation, making it ideal for switching applications in power supplies, motor control, and DC-DC converters.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of up to 60A, and a gate threshold voltage (VGS(th)) ranging from 2V to 4V. The device is packaged in a TO-220 form factor, facilitating effective heat dissipation.
The IRF7103TRPBF is also RoHS compliant, ensuring it meets environmental standards. Its fast switching capabilities and robustness make it suitable for applications requiring high efficiency and reliability. Overall, this MOSFET is a versatile component favored in modern electronic designs.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of up to 60A, and a gate threshold voltage (VGS(th)) ranging from 2V to 4V. The device is packaged in a TO-220 form factor, facilitating effective heat dissipation.
The IRF7103TRPBF is also RoHS compliant, ensuring it meets environmental standards. Its fast switching capabilities and robustness make it suitable for applications requiring high efficiency and reliability. Overall, this MOSFET is a versatile component favored in modern electronic designs.
Features
The IRF7103TRPBF is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 60A, depending on thermal conditions.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 10 mΩ at V_GS = 10V, which enhances efficiency and reduces power loss.
4. Fast Switching: Designed for fast switching speeds, which is beneficial for high-frequency applications.
5. Thermal Stability: Features a robust thermal performance, allowing for reliable operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and thermal dissipation.
This MOSFET is ideal for applications such as DC-DC converters, motor drivers, and other power management tasks.
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 60A, depending on thermal conditions.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of approximately 10 mΩ at V_GS = 10V, which enhances efficiency and reduces power loss.
4. Fast Switching: Designed for fast switching speeds, which is beneficial for high-frequency applications.
5. Thermal Stability: Features a robust thermal performance, allowing for reliable operation in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and thermal dissipation.
This MOSFET is ideal for applications such as DC-DC converters, motor drivers, and other power management tasks.
Package
The IRF7103TRPBF is packaged in a SOIC-8 (Small Outline Integrated Circuit) package type. This surface-mount package allows for efficient thermal performance and compact design in electronic applications.
Pinout
The IRF7103TRPBF is a N-channel MOSFET with a total of 5 pins. Its pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where current flows out when the MOSFET is on.
3. Source (S) - The terminal through which current enters when the MOSFET is on.
4. Body Diode (integrated) - Provides a path for current flow in the reverse direction, typically used for inductive loads.
5. Substrate (often internally connected to source) - Commonly tied to the source terminal, not usually externally connected.
The IRF7103TRPBF is designed for applications such as power management, motor control, and other switching applications, with high efficiency and fast switching capabilities.
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where current flows out when the MOSFET is on.
3. Source (S) - The terminal through which current enters when the MOSFET is on.
4. Body Diode (integrated) - Provides a path for current flow in the reverse direction, typically used for inductive loads.
5. Substrate (often internally connected to source) - Commonly tied to the source terminal, not usually externally connected.
The IRF7103TRPBF is designed for applications such as power management, motor control, and other switching applications, with high efficiency and fast switching capabilities.
Manufacturer
The IRF7103TRPBF is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the semiconductor and passive component industry, specializing in the design and manufacturing of a wide range of electronic components. These include power MOSFETs, diodes, capacitors, resistors, and other related products. The company serves various markets such as automotive, industrial, computing, telecommunications, and consumer electronics. Vishay is known for its innovation and high-quality components, catering to both commercial and military applications.
Application
The IRF7103TRPBF is a N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, motor drives, power inverters, and load switching. It is also utilized in high-speed switching applications due to its low on-resistance and fast switching capabilities, making it suitable for use in portable electronics and renewable energy systems.
Equivalent
The IRF7103TRPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, BS170, and BSS138. However, for exact replacements, refer to specific parameters like V_DS, I_D, R_DS(on), and V_GS(th). Always verify through datasheets for compatibility in application.
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