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IRF6646TRPBF

Name: IRF6646TRPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 80V 12A DIRECTFET

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資料表 IRF6646TRPBF DataSheet
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規格

Supplier	Infineon Technologies
Package	Tape & Reel (TR),Cut Tape (CT)
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	80 V
Current-ContinuousDrain(Id)@25°C	12A (Ta), 68A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	9.5mOhm @ 12A, 10V
Vgs(th)(Max)@Id	4.9V @ 150µA
GateCharge(Qg)(Max)@Vgs	50 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	2060 pF @ 25 V
PowerDissipation(Max)	2.8W (Ta), 89W (Tc)
OperatingTemperature	-40°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	DIRECTFET™ MN

概述

Description

The IRF6646TRPBF is a high-performance N-channel MOSFET designed for use in various power management applications. It features a low on-resistance (RDS(on)) of approximately 0.0085 ohms at a gate voltage of 10V, allowing efficient power delivery and reduced heat generation. The device is rated for a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 60A, making it suitable for applications such as synchronous rectification, DC-DC converters, and motor control.
The IRF6646TRPBF comes in a TO-220 package, providing effective thermal management, and is designed for easy mounting on PCBs. Its fast switching capabilities enhance efficiency in high-frequency applications. Additionally, it is RoHS compliant, ensuring it meets environmental regulations regarding hazardous substances.
Overall, the IRF6646TRPBF is favored in consumer electronics, automotive, and industrial applications due to its reliability and performance characteristics.

Features

The IRF6646TRPBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum Drain-Source Voltage (Vds) of 60V, suitable for various power management applications.
2. Current Rating: Continuous Drain Current (Id) of up to 40A, providing robust performance for demanding loads.
3. Rds(on): Low On-Resistance (Rds(on)) of around 10 mΩ at Vgs = 10V, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Vgs(th) typically between 2-4V, enabling it to be driven with standard gate voltages.
5. Safe Operating Area: Capable of handling high pulse currents, ensuring reliability in switching applications.
6. Package: Available in a TO-220 package for effective thermal management and easy mounting.
These features make the IRF6646TRPBF ideal for use in power supplies, motor drivers, and other applications requiring efficient switching and high current handling.

Package

The IRF6646TRPBF is packaged in a TO-220 form factor, which is a standard package type for power MOSFETs, providing good thermal performance and ease of mounting.

Pinout

The IRF6646TRPBF is an N-channel MOSFET with a total of 6 pins. Its primary function is to act as a switch or amplifier in various electronic circuits. The specific pin configuration is as follows:
1. Gate (G): Controls the MOSFET's operation; applying voltage here turns the device on or off.
2. Drain (D): The output terminal where current flows out when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
The remaining pins are typically used for additional functionality in certain package types, such as a Kelvin connection or parasitic diode features. The IRF6646TRPBF is designed for high-speed switching applications, featuring low on-resistance and high current capability. It is commonly used in power management systems, motor controls, and DC-DC converters.

Manufacturer

The IRF6646TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in producing a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors, serving various industries such as automotive, industrial, and consumer electronics. Infineon is known for its innovations in power management and energy efficiency solutions, contributing significantly to advancements in areas like electric mobility and renewable energy.

Application

The IRF6646TRPBF is an N-channel MOSFET primarily used in high-efficiency power management applications. Its primary application areas include DC-DC converters, motor control, power supplies, and load switching. Additionally, it is suitable for renewable energy systems and battery management due to its low on-resistance and fast switching capabilities, enhancing overall system efficiency.

Equivalent

The IRF6646TRPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, BSS138, and FQP30N06L. For specific applications, check datasheets for parameters like V_DS, I_D, and R_DS(on) to ensure compatibility. Always consider manufacturer recommendations for direct replacements.