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IRF630NSTRLPBF

Name: IRF630NSTRLPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 200V 9.3A D2PAK

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包 TO-263-3
資料表 IRF630NSTRLPBF DataSheet
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規格

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	200 V
Current-ContinuousDrain(Id)@25°C	9.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	300mOhm @ 5.4A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	35 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	575 pF @ 25 V
PowerDissipation(Max)	82W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D2PAK

概述

Description

The IRF630NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) capability of 9A, making it suitable for power management in various electronic circuits.
Key specifications include a low on-resistance (R_DS(on)) of approximately 0.4 ohms at a gate-source voltage (V_GS) of 10V, which helps minimize power loss during operation. The device is housed in a TO-220 package, providing efficient heat dissipation, and is commonly used in applications such as power supplies, motor controllers, and automotive electronics.
The IRF630NSTRLPBF also includes a built-in body diode, allowing for reverse current flow, which is beneficial in switching applications. It is compliant with RoHS standards, making it an environmentally friendly choice for modern electronics. Overall, the IRF630NSTRLPBF is a versatile component suitable for various high-voltage, high-current applications.

Features

The IRF630NSTRLPBF is an N-channel MOSFET known for its high voltage and current handling capabilities. Key features include:
1. Voltage Rating: 500V maximum drain-source voltage (V_DS), making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 9A, allowing it to handle substantial loads.
3. R_DS(on): Low on-resistance (typically 0.4Ω at V_GS = 10V), which reduces power loss and improves efficiency.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, suitable for standard gate drive voltages.
5. Package Type: Available in TO-220 and other packages for easy mounting and heat dissipation.
6. Fast Switching: Capable of rapid switching transitions, ideal for power management and inverter applications.
7. Applications: Commonly used in power supplies, motor control, and other high-voltage circuits.
The IRF630NSTRLPBF is valued for its reliability in demanding environments, making it a popular choice in various electronic designs.

Package

The IRF630NSTRLPBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and ease of mounting.

Pinout

The IRF630NSTRLPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin is the output of the MOSFET, where current exits to the ground or return path.
The IRF630NSTRLPBF is designed for high-speed switching applications and features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 9.2A. It is commonly used in power management, switching regulators, and other high-voltage applications.

Manufacturer

The manufacturer of the IRF630NSTRLPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Infineon focuses on power semiconductors, microcontrollers, and sensors, and is known for its innovations in energy efficiency and performance in electronic systems. The IRF630NSTRLPBF is a N-channel power MOSFET, commonly used in applications such as motor control, switching power supplies, and other power management systems.

Application

The IRF630NSTRLPBF is an N-channel MOSFET commonly used in applications such as power supplies, motor drives, and switching regulators. Its features make it suitable for high-speed switching and high-voltage applications, including inverters, audio amplifiers, and DC-DC converters. Its low on-resistance and high efficiency also make it ideal for automotive and industrial control systems.

Equivalent

The IRF630NSTRLPBF is an N-channel MOSFET. Equivalent products include:
1. IRF630
2. IRF640
3. STP16NF06
4. FQP30N06L
5. MTP30N06E
Check specific datasheets for exact specifications, as voltage and current ratings may vary slightly.