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IRF620STRLPBF

Name: IRF620STRLPBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 200V 5.2A D2PAK

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資料表 IRF620STRLPBF DataSheet
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規格

Supplier	Vishay Siliconix
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	200 V
Current-ContinuousDrain(Id)@25°C	5.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	800mOhm @ 3.1A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	14 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	260 pF @ 25 V
PowerDissipation(Max)	3W (Ta), 50W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D2PAK

概述

Description

IRF620STRLPBF is a high‑voltage N‑channel enhancement‑mode power MOSFET from the IRF620 family (Pb‑free variant). It is intended for switching and power‑amplification in applications like switch‑mode power supplies, inverters, and motor drives. Typical specs (check the exact variant in the datasheet): Vds around 600 V, continuous Id on the order of about 5 A (depends on package and cooling), and Rds(on) roughly 0.8–1.2 Ω. Gate threshold is ~2–4 V. The STRLPBF suffix indicates a lead‑free, RoHS‑compliant package. For precise ratings, packaging, thermal data, and safe‑operating area, consult the official IRF620STRLPBF datasheet or distributor pages.

Features

Here are typical features of the IRF620STRLPBF (N‑channel MOSFET, 200 V class). Note: check the exact datasheet for your lot.
- N‑channel enhancement‑mode MOSFET
- Blocking voltage: Vds ≈ 200 V
- Continuous drain current: up to about 5 A (per package)
- On‑state resistance: roughly 0.8–1.3 Ω (typical ~1.0 Ω)
- Gate threshold: ~2–4 V (not a logic‑level device; full conduction at higher gate drive)
- Fast switching suitable for SMPS and power‑control applications
- Avalanche energy capability and rugged SOA for transient events
- RoHS/compliant lead‑free package (LPBF variant)
- Suitable for switching, motor drive, power supplies, and lighting driver circuits
Caveat: exact electricals vary by lot and package; consult the current datasheet for precise numbers.

Package

IRF620STRLPBF is an N‑channel MOSFET supplied in a TO‑220AB (TO‑220) through‑hole package. The "STRLPBF" suffix denotes tape‑and‑reel packaging and RoHS/lead‑free finish.

Pinout

IRF620STRLPBF is a 3‑pin N‑channel power MOSFET (TO‑220 package). Pin functions (left to right facing the front/label):
1. Gate — control input
2. Drain — power input/output (tab is electrically tied to Drain)
3. Source — return/reference
Function: enhancement‑mode MOSFET used as a high‑voltage switching or amplification device (VDS ~200 V typical).

Manufacturer

The IRF620STRLPBF is made by Infineon Technologies (originally branded International Rectifier). Infineon is a global semiconductor company that designs and manufactures power semiconductors and integrated circuits—especially MOSFETs, power management devices and related solutions for automotive, industrial, and consumer electronics.

Application

IRF620STRLPBF is a high-voltage N-channel MOSFET (~600V) used in:
- Offline switch-mode power supplies and PFC
- High-voltage DC-DC converters and motor drives
- Solar/wind inverters and battery charging systems
- Uninterruptible power supplies (UPS) and general power electronics switching
- Lighting ballasts and industrial power-electronics applications

Equivalent

Direct equivalents: IRF620 (same N‑channel 200 V MOSFET from other manufacturers: Vishay, ON Semiconductor, Fairchild, etc.). Possible substitutes: IRF630 or any 200 V N‑channel MOSFET with comparable RDS(on), ID, VGS and package. Always verify VDS, RDS(on), continuous/drain current, switching specs and thermal limits in the datasheets before substituting.