IRF5801TRPBF

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IRF5801TRPBF

MOSFET N-CH 200V 600MA MICRO6

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規格

Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 88 pF @ 25 V
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number IRF5801

概述

Description

The IRF5801TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a low on-resistance (RDS(on)), which minimizes power loss and improves efficiency in power management circuits. With a maximum drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) capability of up to 50A, this MOSFET is suitable for a variety of applications, including DC-DC converters, motor control, and power supplies.
The "TR" in the part number indicates that it is available in a tape and reel packaging, making it convenient for automated assembly processes. The "PBF" suffix signifies that it is lead-free, complying with environmental regulations such as RoHS.
Key specifications include a low gate threshold voltage (VGS(th)) and fast switching times, making it ideal for applications that require rapid on/off cycling. Overall, the IRF5801TRPBF is a versatile component favored in both consumer electronics and industrial applications due to its performance characteristics.

Features

The IRF5801TRPBF is an N-channel MOSFET designed for high-voltage, high-efficiency power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Continuous drain current (I_D) up to 30A.
3. R_DS(on): Low on-resistance, typically around 0.027 ohms at V_GS = 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: Voltage required to turn on the MOSFET is between 2V to 4V, allowing for easy interfacing with low-voltage control signals.
5. Fast Switching: High-speed switching capability suitable for PWM applications and other fast-switching designs.
6. Package: Available in the TO-220 package, which provides good thermal management and ease of mounting.
7. Applications: Commonly used in power supplies, motor drivers, and other high-efficiency power conversion circuits.
These features make the IRF5801TRPBF suitable for various industrial and consumer applications where high performance and reliability are required.

Package

The IRF5801TRPBF is packaged in a TO-220 form factor. This package type is commonly used for power transistors and provides good thermal performance, making it suitable for high-power applications.

Pinout

The IRF5801TRPBF is a N-channel MOSFET designed for power management applications. It typically comes in a DPAK package, which has a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate turns the device on, allowing current to flow between the drain and source.

2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the on-state. It connects to the load in the circuit.
3. Source (S): This pin is the entry point for current into the MOSFET and is typically connected to ground in common applications.
In summary, the IRF5801TRPBF has 3 pins: Gate, Drain, and Source, serving to control and manage electrical power in various circuits.

Manufacturer

The IRF5801TRPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a wide range of semiconductor products and solutions, including power management, automotive, industrial electronics, and security technology. The company is known for its high-performance semiconductor devices, particularly in power MOSFETs, IGBTs, and microcontrollers, serving various industries such as automotive, industrial, and consumer electronics. Infineon focuses on innovation and sustainability, aiming to provide efficient solutions that contribute to smart and green technologies.

Application

The IRF5801TRPBF is a N-channel MOSFET widely used in various applications, including power management, motor control, and DC-DC converters. It is suitable for high-efficiency switching applications, such as power supplies and automotive systems. Its low on-resistance and high-speed switching capabilities make it ideal for use in power amplifiers and industrial automation.

Equivalent

The IRF5801TRPBF is a N-channel MOSFET. Equivalent products include the STP80NF55, FQP50N06, and AOD602. Make sure to verify specifications such as voltage, current ratings, and package type when selecting an alternative.

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