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IRF530NS
MOSFET N-CH 100V 17A D2PAK
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規格
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 70W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
概述
Description
The IRF530NS is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used for switching and amplification applications in electronic circuits. It features a voltage rating of 100V and a continuous drain current rating of up to 9.2A, making it suitable for medium to high-power applications. The device has a low on-resistance (R_DS(on)) of approximately 0.18 ohms, which contributes to higher efficiency by minimizing power loss during operation.
With a threshold voltage (V_GS(th)) typically between 2-4V, the IRF530NS can be fully turned on with relatively low gate voltages, facilitating easier interfacing with microcontrollers and other digital logic devices. The package options often include TO-220 and DPAK, providing flexibility in thermal management and mounting.
Common applications for the IRF530NS include motor drivers, power supplies, and inverters, where rapid switching and high efficiency are required. Its reliability and performance make it a popular choice among engineers and hobbyists alike.
With a threshold voltage (V_GS(th)) typically between 2-4V, the IRF530NS can be fully turned on with relatively low gate voltages, facilitating easier interfacing with microcontrollers and other digital logic devices. The package options often include TO-220 and DPAK, providing flexibility in thermal management and mounting.
Common applications for the IRF530NS include motor drivers, power supplies, and inverters, where rapid switching and high efficiency are required. Its reliability and performance make it a popular choice among engineers and hobbyists alike.
Features
The IRF530NS is an N-channel power MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Capability: The continuous drain current (I_D) is rated at 9.2A at a temperature of 25°C, with a pulsed current capability higher.
3. Low On-Resistance: The on-resistance (R_DS(on)) is approximately 0.44 ohms at a gate-source voltage (V_GS) of 10V, allowing for efficient power delivery and reduced heat generation.
4. Fast Switching Speed: The device supports high-frequency operation, beneficial for efficient switching in power supplies.
5. Thermal Characteristics: It features a thermal resistance junction-to-case (RθJC) of about 62°C/W, aiding in thermal management in applications.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring compatibility with various driving circuits.
These features make the IRF530NS suitable for motor control, power management, and other high-power applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Capability: The continuous drain current (I_D) is rated at 9.2A at a temperature of 25°C, with a pulsed current capability higher.
3. Low On-Resistance: The on-resistance (R_DS(on)) is approximately 0.44 ohms at a gate-source voltage (V_GS) of 10V, allowing for efficient power delivery and reduced heat generation.
4. Fast Switching Speed: The device supports high-frequency operation, beneficial for efficient switching in power supplies.
5. Thermal Characteristics: It features a thermal resistance junction-to-case (RθJC) of about 62°C/W, aiding in thermal management in applications.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring compatibility with various driving circuits.
These features make the IRF530NS suitable for motor control, power management, and other high-power applications.
Package
The IRF530NS is typically available in a TO-220 package type. This package features a metal tab for heat dissipation, making it suitable for high-power applications.
Pinout
The IRF530NS is an N-channel MOSFET with a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected. It is the terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the terminal through which the current exits the MOSFET.
The IRF530NS is commonly used in applications such as switching power supplies, motor drives, and other power control circuits.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected. It is the terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the terminal through which the current exits the MOSFET.
The IRF530NS is commonly used in applications such as switching power supplies, motor drives, and other power control circuits.
Manufacturer
The IRF530NS is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company focuses on various applications such as automotive, industrial, and consumer electronics, and is recognized for its innovation in power management and efficiency technologies. Infineon plays a significant role in the global semiconductor market, contributing to advancements in energy efficiency and digitalization.
Application
The IRF530NS is an N-channel MOSFET commonly used in power electronics applications. Its key areas include:
1. Switching Power Supplies: Efficiently managing voltage regulation.
2. Motor Drivers: Controlling DC motors in various configurations.
3. Power Amplifiers: Enhancing audio and RF signals.
4. Power Management Circuits: Regulating power in consumer electronics.
5. Inverters: Converting DC to AC in renewable energy systems.
Its high voltage and current ratings make it suitable for these applications.
1. Switching Power Supplies: Efficiently managing voltage regulation.
2. Motor Drivers: Controlling DC motors in various configurations.
3. Power Amplifiers: Enhancing audio and RF signals.
4. Power Management Circuits: Regulating power in consumer electronics.
5. Inverters: Converting DC to AC in renewable energy systems.
Its high voltage and current ratings make it suitable for these applications.
Equivalent
Equivalent products to the IRF530NS MOSFET include the IRF540, IRF520, and IRF530. Other compatible alternatives are the STP16NF06 and FQP30N06L. These transistors share similar specifications, such as voltage and current ratings, making them suitable substitutes in most applications. Always verify the specific parameters and characteristics for your particular use case.
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