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IRF510PBF
MOSFET N-CH 100V 5.6A TO220AB
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規格
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 5.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 540mOhm @ 3.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 180 pF @ 25 V |
| PowerDissipation(Max) | 43W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
The IRF510PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in various electronic applications, particularly in switching and amplification circuits. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 9.2A, making it suitable for high-voltage and moderate-current applications.
One of its key characteristics is a low on-state resistance (R_DS(on)), which allows for efficient power handling with minimal heat generation. The IRF510PBF has a gate threshold voltage (V_GS(th)) typically between 2V and 4V, enabling it to be driven by standard logic levels. Additionally, it is known for its fast switching capabilities, making it ideal for applications such as audio amplifiers, power supplies, and motor control.
The "PBF" in its designation indicates that it is lead-free, complying with environmental regulations such as RoHS. This MOSFET is commonly found in through-hole packages, allowing for easy integration into various circuit designs.
One of its key characteristics is a low on-state resistance (R_DS(on)), which allows for efficient power handling with minimal heat generation. The IRF510PBF has a gate threshold voltage (V_GS(th)) typically between 2V and 4V, enabling it to be driven by standard logic levels. Additionally, it is known for its fast switching capabilities, making it ideal for applications such as audio amplifiers, power supplies, and motor control.
The "PBF" in its designation indicates that it is lead-free, complying with environmental regulations such as RoHS. This MOSFET is commonly found in through-hole packages, allowing for easy integration into various circuit designs.
Features
The IRF510PBF is an N-channel MOSFET designed for high-speed switching and amplification applications. Its key features include:
1. Voltage Rating: Drain-Source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) of 9.2A, allowing it to handle significant loads.
3. RDS(on): Low on-resistance (typically around 0.5 ohms), which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage (Vgs(th)): Typically between 2V to 4V, enabling it to be driven by low-voltage logic levels.
5. Fast Switching Speeds: Capable of switching at high frequencies, ideal for RF and other fast applications.
6. Package Type: Available in TO-220 and TO-247 packages, providing versatility in mounting and heat dissipation.
7. Thermal Performance: Good thermal stability with a maximum junction temperature of 150°C.
These features make the IRF510PBF suitable for various applications, including power supplies, motor control, and amplifiers.
1. Voltage Rating: Drain-Source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) of 9.2A, allowing it to handle significant loads.
3. RDS(on): Low on-resistance (typically around 0.5 ohms), which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage (Vgs(th)): Typically between 2V to 4V, enabling it to be driven by low-voltage logic levels.
5. Fast Switching Speeds: Capable of switching at high frequencies, ideal for RF and other fast applications.
6. Package Type: Available in TO-220 and TO-247 packages, providing versatility in mounting and heat dissipation.
7. Thermal Performance: Good thermal stability with a maximum junction temperature of 150°C.
These features make the IRF510PBF suitable for various applications, including power supplies, motor control, and amplifiers.
Package
The IRF510PBF is typically available in a TO-220 package type. This package features three leads and is designed for easy mounting on heatsinks, making it suitable for power applications.
Pinout
The IRF510PBF is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow from the drain to the source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is in the "on" state. It connects to the load or the power supply.
3. Source (S): This pin is where the current exits the MOSFET when it is conducting. It usually connects to ground in common-source configurations.
The IRF510PBF is commonly used in switching applications, amplifiers, and power control circuits due to its ability to handle significant current and voltage levels.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow from the drain to the source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it is in the "on" state. It connects to the load or the power supply.
3. Source (S): This pin is where the current exits the MOSFET when it is conducting. It usually connects to ground in common-source configurations.
The IRF510PBF is commonly used in switching applications, amplifiers, and power control circuits due to its ability to handle significant current and voltage levels.
Manufacturer
The manufacturer of the IRF510PBF is Infineon Technologies. Infineon is a global semiconductor company that specializes in providing a wide range of products and solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. Founded in 1999 as a spin-off from Siemens AG, Infineon is headquartered in Neubiberg, Germany. The company focuses on markets such as automotive, industrial power control, and digital security, and is known for its innovative technologies that enhance energy efficiency and connectivity in various applications.
Application
The IRF510PBF is an N-channel MOSFET commonly used in applications such as:
1. Power amplifiers in RF and audio circuits.
2. Switching regulators and DC-DC converters.
3. Motor control and drive circuits.
4. Signal amplification in low-frequency applications.
5. Power management in electronic devices.
Its features include low on-resistance and high-speed switching, making it suitable for various power and control applications.
1. Power amplifiers in RF and audio circuits.
2. Switching regulators and DC-DC converters.
3. Motor control and drive circuits.
4. Signal amplification in low-frequency applications.
5. Power management in electronic devices.
Its features include low on-resistance and high-speed switching, making it suitable for various power and control applications.
Equivalent
Equivalent products to the IRF510PBF include the IRF520, IRF540, and IRF1010. Additionally, the STP16NF06 and BSS138 can also serve similar applications, though specifications may vary. Always check the datasheets for voltage, current ratings, and other parameters to ensure compatibility.
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