IRF3610SPBF

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IRF3610SPBF

MOSFET N-CH 100V 103A D2PAK

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規格

Series HEXFET®
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5380 pF @ 25 V
Power Dissipation (Max) 333W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

概述

Description

The IRF3610SPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 50A, it is suitable for various power management tasks, including DC-DC converters, motor control, and power inverters.
This MOSFET features a low on-resistance (R_DS(on)) of approximately 0.035Ω, which reduces power losses during operation and enhances thermal performance. Its fast switching capabilities make it ideal for applications requiring high-frequency operation. The device comes in a TO-220 package, facilitating easy heat dissipation.
Additionally, the IRF3610SPBF is built to meet RoHS compliance, making it a suitable choice for environmentally-conscious designs. Overall, it combines high performance, reliability, and efficiency, making it a popular choice among engineers for various electronic and power applications.

Features

The IRF3610SPBF is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, enabling it to support high-load situations.
3. On-Resistance: The on-resistance (R_DS(on)) typically is around 0.04 ohms, ensuring low conduction losses and efficient operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive requirements.
5. Package Type: It comes in a TO-220 package, which aids in effective thermal management due to its good heat dissipation characteristics.
6. Fast Switching: The IRF3610SPBF exhibits rapid switching speeds, making it ideal for applications in power supplies and motor control.
This combination of features makes the IRF3610SPBF suitable for a wide range of applications, including DC-DC converters, automotive systems, and industrial controls.

Package

The IRF3610SPBF is packaged in a TO-220 style, which is a metal case with three leads for mounting. This package type provides efficient heat dissipation and is commonly used for power MOSFET applications.

Pinout

The IRF3610SPBF is an N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch or amplifier in electronic circuits. The pin configuration is as follows:
1. Gate (G) - Input control for switching.
2. Drain (D) - Output connection for the load.
3. Source (S) - Ground reference or input for the load connection.
4. Body Diode - Internal diode between the Source and Drain, allows for reverse current flow.
The device is typically used in power management applications, including DC-DC converters, motor drivers, and power inverters, due to its low on-resistance and high-speed switching capabilities. The IRF3610SPBF can handle significant voltage and current, making it suitable for various high-power applications.

Manufacturer

The manufacturer of the IRF3610SPBF is Infineon Technologies. Infineon is a global semiconductor company based in Germany, specializing in the development and production of a wide range of semiconductor solutions. Their products are used in various applications, including automotive, industrial, and consumer electronics. Infineon focuses on power management, connectivity, and security solutions, and is known for its expertise in power semiconductors, including MOSFETs, IGBTs, and gate drivers. The IRF3610SPBF is a high-performance N-channel MOSFET designed for power applications, showcasing Infineon's commitment to innovation and quality in the semiconductor industry.

Application

The IRF3610SPBF is a power MOSFET primarily used in applications such as power management, motor control, DC-DC converters, and switching power supplies. Its high efficiency and low on-resistance make it suitable for use in renewable energy systems, electric vehicles, and high-frequency applications. Additionally, it is utilized in industrial equipment and consumer electronics for switching and amplification purposes.

Equivalent

The IRF3610SPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and BSS140, which offer similar voltage and current ratings. Ensure to check specifications like RDS(on), VDS, ID, and package type for compatibility with your specific application.

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