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IRF2805PBF

Name: IRF2805PBF
Rating: 4.7 (12 reviews)

MOSFET N-CH 55V 75A TO220AB

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包 TO-220-3
資料表 IRF2805PBF DataSheet
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規格

Package	Tube
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	55 V
Current-ContinuousDrain(Id)@25°C	75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	4.7mOhm @ 104A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	230 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	5110 pF @ 25 V
PowerDissipation(Max)	330W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

概述

Description

The IRF2805PBF is an N-channel power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating of up to 80A, making it suitable for various power management tasks. With a low R_DS(on) of around 8 mΩ (typical at V_GS = 10V), it minimizes conduction losses, enhancing overall system efficiency.
This MOSFET is often used in applications like DC-DC converters, motor drives, and power inverters due to its fast switching capabilities and robust thermal performance. The IRF2805PBF is packaged in a TO-220 format, which aids in effective heat dissipation. It is also RoHS-compliant, ensuring reduced environmental impact.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a total gate charge (Q_g) of around 75 nC, making it compatible with various gate drive circuits. Overall, the IRF2805PBF is a reliable choice for engineers seeking high-performance power solutions in demanding environments.

Features

The IRF2805PBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power applications.

2. Current Handling: The device can handle continuous drain currents (I_D) of up to 100A, making it robust for high-power applications.
3. On-Resistance: The typical on-resistance (R_DS(on)) is very low, typically around 4.5 mΩ, which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient switching with lower gate drive voltages.
5. Fast Switching: It provides fast switching speeds, ideal for applications like DC-DC converters and motor drives.
6. Thermal Management: The device features a TO-220 package for effective heat dissipation.
7. RoHS Compliance: It is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental safety.
These features make the IRF2805PBF suitable for various high-performance applications in power electronics.

Package

The IRF2805PBF is packaged in a TO-220 type package. This package is designed for power MOSFETs, offering good thermal performance and easy mounting on heatsinks.

Pinout

The IRF2805PBF is a N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the current enters the MOSFET. It connects to the load.
3. Source (S): This is the terminal where the current exits the MOSFET, typically connected to ground in switching applications.
The IRF2805PBF is designed for high-speed switching and can handle high voltage and current, making it suitable for various applications, including power management and motor control.

Manufacturer

The IRF2805PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power management, security, and sensor technologies. Infineon plays a significant role in the development of energy-efficient and reliable electronic components, catering to a wide range of industries.

Application

The IRF2805PBF is a N-channel MOSFET primarily used in power management applications. Its application areas include:
1. DC-DC converters: For efficient switching in power supplies.
2. Motor control: In industrial and automotive applications.
3. Power inverters: For renewable energy systems.
4. Load switching: In various electronic devices.
5. Battery management systems: For energy storage applications.
Its high efficiency and fast switching capabilities make it suitable for these applications.

Equivalent

The IRF2805PBF is an N-channel MOSFET. Equivalent products include:
1. STP55NF06L - STMicroelectronics
2. BSS123 - NXP Semiconductors
3. FQP50N06L - ON Semiconductor
4. IRF3205 - International Rectifier
Always check datasheets for specific characteristics such as voltage, current ratings, and package types to ensure compatibility.