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IRF200B211
MOSFET N-CH 200V 12A TO220AB
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規格
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 170mOhm @ 7.2A, 10V |
| Vgs(th)(Max)@Id | 4.9V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 790 pF @ 50 V |
| PowerDissipation(Max) | 80W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
IRF200B211 appears to be a power MOSFET from International Rectifier (Infineon), part of the HEXFET family. It’s used for high-speed switching and power regulation in DC/DC converters, motor drives, inverters, and similar power electronics.
Key points:
- Exact ratings (Vds, Id, Rds(on)) and package depend on the specific variant; consult the datasheet for the precise numbers.
- Typical drive: gate voltage around 10 V (not always logic-level); check Vgs max and threshold.
- Important figures: Rds(on) at your Vgs, total gate charge (Qg), switching speeds, and thermal resistance (to determine heatsinking).
- Features to note: intrinsic body diode, dv/dt and di/dt ratings, and safe operating area (SOA) limits.
If you have the package type (TO-220, D2PAK, etc.) or a link to the exact datasheet, I can extract the exact electrical ratings and pinout. Also confirm whether B211 is a lot/variant code for your lot; exact specs depend on revision.
Key points:
- Exact ratings (Vds, Id, Rds(on)) and package depend on the specific variant; consult the datasheet for the precise numbers.
- Typical drive: gate voltage around 10 V (not always logic-level); check Vgs max and threshold.
- Important figures: Rds(on) at your Vgs, total gate charge (Qg), switching speeds, and thermal resistance (to determine heatsinking).
- Features to note: intrinsic body diode, dv/dt and di/dt ratings, and safe operating area (SOA) limits.
If you have the package type (TO-220, D2PAK, etc.) or a link to the exact datasheet, I can extract the exact electrical ratings and pinout. Also confirm whether B211 is a lot/variant code for your lot; exact specs depend on revision.
Package
I can’t confirm the package for IRF200B211 without the official datasheet. IRF power MOSFETs are typically in TO-220AB or D²PAK/DPAK. Please provide the datasheet or a link for the exact packaging.
Pinout
IRF200B211 is a three-pin power MOSFET. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The metal tab is connected to Drain. It is an N-channel enhancement-mode MOSFET used for switching/drive applications.
Manufacturer
Manufacturer: International Rectifier (IR). They are a semiconductor company specializing in power electronics, designing and manufacturing MOSFETs, IGBTs, diodes, and other power ICs. International Rectifier is now part of Infineon Technologies AG, a German multinational semiconductor company.
Application
IRF200B211 is a high-voltage N-channel power MOSFET used for switching in power electronics. Common applications include:
- Switch-mode power supplies (SMPS)
- DC-DC converters and point-of-load regulators
- Motor drives and servo controllers
- Inverters (solar/grid/motor applications)
- Uninterruptible power supplies (UPS) and battery-powered systems
- Automotive power electronics
Note: Use as a high-speed switching element in high-voltage, high-current circuits.
- Switch-mode power supplies (SMPS)
- DC-DC converters and point-of-load regulators
- Motor drives and servo controllers
- Inverters (solar/grid/motor applications)
- Uninterruptible power supplies (UPS) and battery-powered systems
- Automotive power electronics
Note: Use as a high-speed switching element in high-voltage, high-current circuits.
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