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IRF1407PBF
MOSFET N-CH 75V 130A TO220AB
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- 包 TO-220-3
- 資料表 IRF1407PBF DataSheet
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規格
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7.8mOhm @ 78A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5600 pF @ 25 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
The IRF1407PBF is a N-channel MOSFET designed for high-performance applications, particularly in power management and switching circuits. It features a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 94A, and a low on-resistance (R_DS(on)) of approximately 0.015Ω, which enhances efficiency by reducing power losses during operation.
This MOSFET is suitable for various applications, including motor drivers, power supplies, and DC-DC converters. Its fast switching speed makes it ideal for high-frequency applications, while its robust thermal performance allows it to handle significant power dissipation.
The IRF1407PBF is packaged in a TO-220 format, which facilitates effective heat dissipation and ease of installation on PCBs. Additionally, it is RoHS compliant, indicating it meets environmental regulations by being free from hazardous substances. This combination of features makes the IRF1407PBF a reliable choice for engineers seeking efficient and effective power management solutions in electronic designs.
This MOSFET is suitable for various applications, including motor drivers, power supplies, and DC-DC converters. Its fast switching speed makes it ideal for high-frequency applications, while its robust thermal performance allows it to handle significant power dissipation.
The IRF1407PBF is packaged in a TO-220 format, which facilitates effective heat dissipation and ease of installation on PCBs. Additionally, it is RoHS compliant, indicating it meets environmental regulations by being free from hazardous substances. This combination of features makes the IRF1407PBF a reliable choice for engineers seeking efficient and effective power management solutions in electronic designs.
Features
The IRF1407PBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of up to 55A, supporting high power levels.
3. RDS(on): It boasts a low on-resistance of approximately 5.5 mΩ at VGS = 10V, which helps minimize power losses during operation.
4. Gate Threshold Voltage (VGS(th)): The threshold voltage is in the range of 1V to 3V, allowing for easy driving with low-voltage logic levels.
5. Package: It is available in a TO-220 package, providing good thermal management for heat dissipation.
6. Fast Switching: Designed for rapid switching capabilities, it is ideal for applications like power management, motor control, and DC-DC converters.
These features make the IRF1407PBF a versatile choice in power electronics applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The MOSFET can handle a continuous drain current (ID) of up to 55A, supporting high power levels.
3. RDS(on): It boasts a low on-resistance of approximately 5.5 mΩ at VGS = 10V, which helps minimize power losses during operation.
4. Gate Threshold Voltage (VGS(th)): The threshold voltage is in the range of 1V to 3V, allowing for easy driving with low-voltage logic levels.
5. Package: It is available in a TO-220 package, providing good thermal management for heat dissipation.
6. Fast Switching: Designed for rapid switching capabilities, it is ideal for applications like power management, motor control, and DC-DC converters.
These features make the IRF1407PBF a versatile choice in power electronics applications.
Package
The IRF1407PBF is typically packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is designed for power applications, providing good thermal performance and ease of mounting on heatsinks.
Manufacturer
The manufacturer of the IRF1407PBF is Infineon Technologies AG. Infineon is a global semiconductor company that specializes in providing a wide range of semiconductor solutions for various applications, including automotive, industrial power control, and security technologies. The company is known for its focus on innovation and high-performance products, particularly in power management and energy efficiency. Infineon operates in several key markets, including automotive, IoT, and renewable energy, and is recognized for its commitment to sustainability and advancing digitalization.
Application
The IRF1407PBF is a N-channel MOSFET commonly used in applications such as power management, motor control, and DC-DC converters. It is suitable for high-frequency switching, enabling efficient operation in power supplies, inverters, and automotive applications. Its low on-resistance and high-speed switching capabilities make it ideal for energy-efficient systems in various electronic devices.
Equivalent
The IRF1407PBF is a N-channel MOSFET. Equivalent products include the STP140N10F3, FQP140N10, and AUIRF1407. Ensure to check specifications such as voltage, current ratings, and on-resistance to confirm compatibility for your specific application.
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