圖片僅供參考
IRF135S203
MOSFET N-CH 135V 129A TO263-3
- 製造商
- 製造商。 部分 #IRF135S203
- 包 TO-263-3
- 資料表 IRF135S203 DataSheet
- 有現貨的3493
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 135 V |
| Current-ContinuousDrain(Id)@25°C | 129A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8.4mOhm @ 77A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 9700 pF @ 50 V |
| PowerDissipation(Max) | 441W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-3-2 |
概述
Description
The IRF135S203 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications in power electronics. It features a low on-resistance (R_DS(on)), which minimizes power loss during operation, making it suitable for power management applications, such as DC-DC converters and motor control circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of around 34A at a specific gate-source voltage (V_GS). Its gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for efficient drive with standard logic levels.
The IRF135S203 is housed in a TO-220 package, facilitating thermal management and easy mounting. Its robust construction and efficiency make it a popular choice in automotive, industrial, and consumer electronics applications. When utilizing this MOSFET, it's essential to consider gate drive requirements and thermal dissipation to ensure reliable operation.
Key specifications include a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of around 34A at a specific gate-source voltage (V_GS). Its gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for efficient drive with standard logic levels.
The IRF135S203 is housed in a TO-220 package, facilitating thermal management and easy mounting. Its robust construction and efficiency make it a popular choice in automotive, industrial, and consumer electronics applications. When utilizing this MOSFET, it's essential to consider gate drive requirements and thermal dissipation to ensure reliable operation.
Features
The IRF135S203 is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power management tasks.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 50A, allowing it to manage substantial loads.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 0.05 ohms at a gate-source voltage (V_GS) of 10V, minimizing power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating operation with lower drive voltages.
5. Package Type: Typically available in a TO-220 package, providing effective thermal dissipation.
6. Fast Switching: The MOSFET is designed for fast switching applications, enhancing overall efficiency in circuits.
These characteristics make the IRF135S203 suitable for use in power supplies, motor control, and other high-power electronic circuits.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power management tasks.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 50A, allowing it to manage substantial loads.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 0.05 ohms at a gate-source voltage (V_GS) of 10V, minimizing power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating operation with lower drive voltages.
5. Package Type: Typically available in a TO-220 package, providing effective thermal dissipation.
6. Fast Switching: The MOSFET is designed for fast switching applications, enhancing overall efficiency in circuits.
These characteristics make the IRF135S203 suitable for use in power supplies, motor control, and other high-power electronic circuits.
Package
The IRF135S203 is typically packaged in a TO-220 form factor, which is a metal can package designed for high-power applications, allowing for effective heat dissipation.
Pinout
The IRF135S203 is an N-channel MOSFET primarily used in power applications. It typically comes in a TO-220 package, which features three pins.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the pin through which the current enters the MOSFET. It connects to the load.
3. Source (S): This pin is where the current exits the MOSFET to return to ground or the power supply.
The IRF135S203 is designed for high efficiency and can handle high voltage and current, making it suitable for various switching and amplification applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the pin through which the current enters the MOSFET. It connects to the load.
3. Source (S): This pin is where the current exits the MOSFET to return to ground or the power supply.
The IRF135S203 is designed for high efficiency and can handle high voltage and current, making it suitable for various switching and amplification applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
The IRF135S203 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in semiconductor and system solutions for automotive, industrial, and multimarket applications. The company focuses on areas such as power management, automotive safety, and Internet of Things (IoT) technologies. Founded in 1999, Infineon has become a key player in the semiconductor industry, emphasizing innovation and sustainability in its product offerings.
Application
The IRF135S203 is an N-channel MOSFET primarily used in power management applications, including switching power supplies, DC-DC converters, motor drivers, and audio amplifiers. Its high efficiency and fast switching capabilities make it suitable for applications requiring rapid ON/OFF control. Additionally, it is utilized in various industrial and automotive applications for load switching and signal amplification.
Equivalent
The IRF135S203 is a power MOSFET. Equivalent products include the IRF135, IRF140, and IRF150 from International Rectifier, as well as the STP16NF06 from STMicroelectronics and the FQP30N06L from On Semiconductor. Always check specific datasheets for exact specifications and compatibility before substituting.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25R8035FM1IL0
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V4035FZUI
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix
-
MX29LV160DTTI-70G
Macronix