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IRF100B202
MOSFET N-CH 100V 97A TO220AB
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規格
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 97A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8.6mOhm @ 58A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 116 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4476 pF @ 50 V |
| PowerDissipation(Max) | 221W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
IRF100B202 is a legacy power MOSFET from International Rectifier (IR). The IRF prefix signals a power MOSFET; the “100”/“B202” portion is likely a lot or internal code rather than a clear, current catalog rating. There isn’t a single widely available datasheet for this exact P/N; you’ll need to locate the original IR/Infineon datasheet or a distributor cross‑reference to confirm its exact specs.
What to do:
- Find the exact datasheet for IRF100B202 (or a cross-reference) to confirm Vds, Id, Rds(on), gate threshold, and package/pinout.
- Check the package type (e.g., TO‑220 or similar) and typical pinout (often G/D/S, but verify).
- Verify ratings at Vgs = 10V (and maximum gate voltage), and note thermal resistance for proper heatsinking.
If the datasheet isn’t available, treat it as obsolete and substitute with a modern N‑channel MOSFET of similar voltage/current ratings and footprint.
What to do:
- Find the exact datasheet for IRF100B202 (or a cross-reference) to confirm Vds, Id, Rds(on), gate threshold, and package/pinout.
- Check the package type (e.g., TO‑220 or similar) and typical pinout (often G/D/S, but verify).
- Verify ratings at Vgs = 10V (and maximum gate voltage), and note thermal resistance for proper heatsinking.
If the datasheet isn’t available, treat it as obsolete and substitute with a modern N‑channel MOSFET of similar voltage/current ratings and footprint.
Package
TO-220AB (through-hole) package.
Pinout
- Pin count: 3 leads (plus a drain tab)
- Pinout (front view, left to right): Gate, Drain, Source (tab is Drain)
- Function: N-channel enhancement-mode power MOSFET, used as a high-current switch in power electronics.
- Pinout (front view, left to right): Gate, Drain, Source (tab is Drain)
- Function: N-channel enhancement-mode power MOSFET, used as a high-current switch in power electronics.
Manufacturer
- Manufacturer: International Rectifier (IR), now a brand of Infineon Technologies AG.
- What kind of company: A global semiconductor company specializing in power electronics and power-management devices (e.g., power MOSFETs, IGBTs, diodes, drivers) for automotive, industrial, and consumer markets.
- What kind of company: A global semiconductor company specializing in power electronics and power-management devices (e.g., power MOSFETs, IGBTs, diodes, drivers) for automotive, industrial, and consumer markets.
Application
IRF100B202 is a high-voltage, high-speed N-channel power MOSFET. Common applications:
- High-voltage switching in SMPS/DC-DC converters
- Motor drives and controllers
- Power inverters (UPS, solar inverters)
- Class-D audio amplifiers
- General power-management circuits
- High-voltage switching in SMPS/DC-DC converters
- Motor drives and controllers
- Power inverters (UPS, solar inverters)
- Class-D audio amplifiers
- General power-management circuits
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