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IR25602STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 3V |
| Current-PeakOutput(SourceSink) | 210mA, 360mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 100ns, 50ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
The IR25602STRPBF is a high-voltage, high-speed power MOSFET gate driver from Infineon Technologies, designed for driving MOSFETs or IGBTs in various switching applications. It typically features a half-bridge configuration, which makes it useful in applications such as motor drives, DC-DC converters, and other power conversion systems.
Key features of the IR25602STRPBF include under-voltage lockout protection, which ensures safe operation by preventing the device from working under insufficient voltage conditions. It also provides integrated dead-time control to prevent shoot-through, where both the high-side and low-side MOSFETs conduct simultaneously, potentially causing short circuits.
With a robust design, this gate driver can handle high-voltage levels and fast switching speeds, contributing to improved efficiency in power electronic systems. It is often favored for its reliability and ease of integration into various power management designs. The IR25602STRPBF is available in a surface-mount package, facilitating compact and efficient PCB layout designs.
Key features of the IR25602STRPBF include under-voltage lockout protection, which ensures safe operation by preventing the device from working under insufficient voltage conditions. It also provides integrated dead-time control to prevent shoot-through, where both the high-side and low-side MOSFETs conduct simultaneously, potentially causing short circuits.
With a robust design, this gate driver can handle high-voltage levels and fast switching speeds, contributing to improved efficiency in power electronic systems. It is often favored for its reliability and ease of integration into various power management designs. The IR25602STRPBF is available in a surface-mount package, facilitating compact and efficient PCB layout designs.
Features
The IR25602STRPBF is a high-voltage integrated circuit designed for use in driving half-bridge configurations, commonly used in power conversion applications. Key features include:
1. High Voltage Tolerance: Capable of withstanding up to 600V, making it suitable for a variety of high-voltage applications.
2. Half-Bridge Driver: Specifically designed to drive N-channel MOSFETs in a half-bridge configuration, facilitating efficient power management.
3. Bootstrap Diode: Built-in bootstrap diode, simplifying the circuit design and reducing the need for external components.
4. Undervoltage Lockout (UVLO): Protects the system by shutting down the driver if the voltage drops below a certain threshold, ensuring reliable operation.
5. Dead-Time Protection: Adjustable dead-time between high and low side switching to prevent shoot-through, enhancing the safety and efficiency of the system.
6. High-Speed Operation: Capable of operating at high frequencies, suitable for modern fast-switching applications.
7. Compact Package: Available in a small footprint package, ideal for space-constrained designs.
These features make the IR25602STRPBF a versatile and reliable choice for applications requiring efficient and safe half-bridge driving capabilities.
1. High Voltage Tolerance: Capable of withstanding up to 600V, making it suitable for a variety of high-voltage applications.
2. Half-Bridge Driver: Specifically designed to drive N-channel MOSFETs in a half-bridge configuration, facilitating efficient power management.
3. Bootstrap Diode: Built-in bootstrap diode, simplifying the circuit design and reducing the need for external components.
4. Undervoltage Lockout (UVLO): Protects the system by shutting down the driver if the voltage drops below a certain threshold, ensuring reliable operation.
5. Dead-Time Protection: Adjustable dead-time between high and low side switching to prevent shoot-through, enhancing the safety and efficiency of the system.
6. High-Speed Operation: Capable of operating at high frequencies, suitable for modern fast-switching applications.
7. Compact Package: Available in a small footprint package, ideal for space-constrained designs.
These features make the IR25602STRPBF a versatile and reliable choice for applications requiring efficient and safe half-bridge driving capabilities.
Package
The IR25602STRPBF is packaged in an SOIC-8 (Small Outline Integrated Circuit) package. This is an 8-pin surface-mount package commonly used for integrated circuits.
Pinout
The IR25602STRPBF is an integrated high-voltage, high-speed power MOSFET driver with a pin count of 14. This device is typically used in half-bridge and full-bridge motor drive applications, resonant converters, and other high-voltage applications.
Key functions of the IR25602STRPBF include:
- High-side and low-side MOSFET drivers for a half-bridge configuration.
- Dead-time control to prevent the high-side and low-side switches from conducting simultaneously.
- Programmable delay for flexible timing adjustments.
- Over-current protection to safeguard against fault conditions.
- Undervoltage lockout (UVLO) to ensure proper operation and prevent malfunctioning under low voltage conditions.
These features make the IR25602STRPBF suitable for various high-voltage, high-speed applications that require efficient and reliable MOSFET driving.
Key functions of the IR25602STRPBF include:
- High-side and low-side MOSFET drivers for a half-bridge configuration.
- Dead-time control to prevent the high-side and low-side switches from conducting simultaneously.
- Programmable delay for flexible timing adjustments.
- Over-current protection to safeguard against fault conditions.
- Undervoltage lockout (UVLO) to ensure proper operation and prevent malfunctioning under low voltage conditions.
These features make the IR25602STRPBF suitable for various high-voltage, high-speed applications that require efficient and reliable MOSFET driving.
Manufacturer
The IR25602STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, manufactures, and markets a broad range of semiconductors and system solutions. The company is known for its expertise in power semiconductors, automotive electronics, security ICs, and embedded systems. Infineon serves various industries, including automotive, industrial, consumer electronics, and communication, focusing on energy efficiency, mobility, and security.
Application
The IR25602STRPBF is a high-voltage gate driver IC commonly used in various applications, including motor drives, power supplies, and lighting systems. It is particularly suitable for driving MOSFETs and IGBTs in half-bridge and full-bridge configurations. The device is ideal for use in industrial and consumer electronics where efficient power conversion and high-frequency switching are required.
Equivalent
The IR25602STRPBF is a high voltage gate driver IC. Equivalent products may include:
1. FAN7392 from ON Semiconductor
2. L6387E from STMicroelectronics
3. IRS21867STR from Infineon Technologies
4. ADuM4223 from Analog Devices
Ensure compatibility by comparing specifications such as voltage ratings, package type, and pin configuration. Always refer to datasheets for detailed comparisons.
1. FAN7392 from ON Semiconductor
2. L6387E from STMicroelectronics
3. IRS21867STR from Infineon Technologies
4. ADuM4223 from Analog Devices
Ensure compatibility by comparing specifications such as voltage ratings, package type, and pin configuration. Always refer to datasheets for detailed comparisons.
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