圖片僅供參考
IR2183STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
- 製造商
- 製造商。 部分 #IR2183STRPBF
- 包 SOIC-8
- 資料表 IR2183STRPBF DataSheet
- 有現貨的5275
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.7V |
| Current-PeakOutput(SourceSink) | 1.9A, 2.3A |
| InputType | Inverting, Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 40ns, 20ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
The IR2183STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed by Infineon Technologies. This integrated circuit is used to control the gates of power transistors, enabling efficient power management in various applications. The driver features two output channels, allowing for the control of both high-side and low-side MOSFETs or IGBTs, which is crucial for applications like motor drives, power supplies, and inverters.
Key specifications include a floating channel designed for bootstrap operation up to +600 volts, a gate drive supply range from 10 volts to 20 volts, and a robust gate drive capability with a high peak output current. The IR2183STRPBF also incorporates comprehensive protection features such as undervoltage lockout for both high-side and low-side outputs and matched propagation delays for high-side and low-side drivers, enhancing reliability and performance.
The device is packaged in a compact SOIC-8 form factor, making it suitable for space-constrained designs. Its reliability and performance make it a popular choice for engineers designing power electronics systems that require efficient switching and robust protection features.
Key specifications include a floating channel designed for bootstrap operation up to +600 volts, a gate drive supply range from 10 volts to 20 volts, and a robust gate drive capability with a high peak output current. The IR2183STRPBF also incorporates comprehensive protection features such as undervoltage lockout for both high-side and low-side outputs and matched propagation delays for high-side and low-side drivers, enhancing reliability and performance.
The device is packaged in a compact SOIC-8 form factor, making it suitable for space-constrained designs. Its reliability and performance make it a popular choice for engineers designing power electronics systems that require efficient switching and robust protection features.
Features
The IR2183STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is designed to drive single high-side switches efficiently. Key features include:
1. Floating Channel Designed for Bootstrap Operation: Capable of working up to 600V, allowing it to handle high-voltage applications.
2. Gate Drive Supply Range: Operates from 10V to 20V, providing flexibility in power supply.
3. Under-Voltage Lockout (UVLO): Protects the driver by ensuring that operation only occurs when the supply voltage is above a certain threshold, preventing potential undervoltage damage.
4. Output Current Capability: It provides 1.4A source and 1.8A sink current, suitable for driving a wide range of power devices.
5. High-Speed Operation: The driver supports fast switching, which is critical for efficient power conversion.
6. Low Power Consumption: Designed to minimize power usage, an essential factor for maintaining system efficiency.
7. Latch Immunity: Protects the circuit from latch-up, which enhances reliability in various operating conditions.
These features make the IR2183STRPBF an excellent choice for applications like motor drives, power supplies, and other systems requiring effective control of high-side power devices.
1. Floating Channel Designed for Bootstrap Operation: Capable of working up to 600V, allowing it to handle high-voltage applications.
2. Gate Drive Supply Range: Operates from 10V to 20V, providing flexibility in power supply.
3. Under-Voltage Lockout (UVLO): Protects the driver by ensuring that operation only occurs when the supply voltage is above a certain threshold, preventing potential undervoltage damage.
4. Output Current Capability: It provides 1.4A source and 1.8A sink current, suitable for driving a wide range of power devices.
5. High-Speed Operation: The driver supports fast switching, which is critical for efficient power conversion.
6. Low Power Consumption: Designed to minimize power usage, an essential factor for maintaining system efficiency.
7. Latch Immunity: Protects the circuit from latch-up, which enhances reliability in various operating conditions.
These features make the IR2183STRPBF an excellent choice for applications like motor drives, power supplies, and other systems requiring effective control of high-side power devices.
Package
The IR2183STRPBF is a high and low side driver IC in an SOIC-8 package. The "SOIC-8" refers to a Small Outline Integrated Circuit with 8 pins, commonly used for surface mounting on PCBs.
Pinout
The IR2183STRPBF is a high and low side driver IC produced by Infineon Technologies. It is designed to drive MOSFETs and IGBTs in various applications. The IC comes in an 8-pin SOIC package. Here’s a brief overview of its pin configuration and function:
1. VCC (Pin 1): Supply voltage for the low side and logic sections.
2. IN (Pin 2): Input signal for controlling the high and low side switches.
3. SD (Pin 3): Shutdown pin; used to disable the output drivers.
4. COM (Pin 4): Common ground reference for the low side.
5. LO (Pin 5): Low side gate drive output.
6. VS (Pin 6): High voltage return; connected to the source of the high side MOSFET.
7. HO (Pin 7): High side gate drive output.
8. VB (Pin 8): Bootstrap voltage, supplies power to the high side driver.
This configuration allows for the effective driving of high-side and low-side MOSFETs or IGBTs in half-bridge, full-bridge, and other power electronics applications.
1. VCC (Pin 1): Supply voltage for the low side and logic sections.
2. IN (Pin 2): Input signal for controlling the high and low side switches.
3. SD (Pin 3): Shutdown pin; used to disable the output drivers.
4. COM (Pin 4): Common ground reference for the low side.
5. LO (Pin 5): Low side gate drive output.
6. VS (Pin 6): High voltage return; connected to the source of the high side MOSFET.
7. HO (Pin 7): High side gate drive output.
8. VB (Pin 8): Bootstrap voltage, supplies power to the high side driver.
This configuration allows for the effective driving of high-side and low-side MOSFETs or IGBTs in half-bridge, full-bridge, and other power electronics applications.
Manufacturer
The IR2183STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, and produces a range of semiconductor solutions. The company is recognized for its expertise in power systems, automotive systems, security, and IoT applications. It was originally a part of Siemens AG before being spun off in 1999. Infineon's acquisition of International Rectifier, a pioneer in power management technology, expanded its product line to include components like the IR2183STRPBF, which is commonly used in power electronics for motor control and other applications.
Application
The IR2183STRPBF is a high-side and low-side gate driver IC used primarily in motor drive applications, power supplies, and DC-DC converters. It is designed for controlling power MOSFETs and IGBTs in half-bridge configurations, making it suitable for use in industrial motor control, automotive electric drivetrains, and renewable energy systems like solar inverters. Its robust design allows it to handle high voltages, making it ideal for high-power applications.
Equivalent
The IR2183STRPBF is a high and low side driver from Infineon Technologies. Equivalent products include the FAN7392 from ON Semiconductor, the MIC4427 from Microchip Technology, and the L6384 from STMicroelectronics. These alternatives offer similar functionalities for driving MOSFETs and IGBTs in various applications. Always check the specific parameters and datasheets to ensure compatibility with your application requirements.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V2033FM1I
Macronix
-
MX25V16066M1I02
Macronix
-
MX25V16066M2I02
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX29F040CQI-70G
Macronix
-
MX29F800CBTI-70G
Macronix