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IR2125PBF
IC GATE DRVR HIGH-SIDE 8DIP
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規格
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Driven Configuration | High-Side |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT, MOSFET (N-Channel) |
| Voltage - Supply | 0V ~ 18V |
| Logic Voltage - VIL, VIH | 0.8V, 2.2V |
| Current - Peak Output (Source, Sink) | 1.6A, 3.3A |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 43ns, 26ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Supplier Device Package | 8-PDIP |
| Base Product Number | IR2125 |
| High Side Voltage - Max (Bootstrap) | 500 V |
概述
Description
IR2125PBF is a part number for a specific semiconductor component manufactured by Infineon Technologies. The component is typically a power MOSFET, which is a type of transistor used for switching and amplifying electronic signals in various applications, including power supply, motor control, and other electronic devices requiring efficient power management.
The "IR" prefix indicates it originated from International Rectifier, a company acquired by Infineon. The "PBF" suffix often denotes that the component is lead-free and RoHS compliant, meaning it adheres to environmental standards restricting the use of certain hazardous substances.
Key features of such components can include high-speed switching, low on-resistance, and robust thermal performance, making them suitable for high-efficiency power conversion systems. The specific characteristics like voltage, current ratings, and package type would define its application scope, such as in consumer electronics, automotive, industrial, or telecommunications sectors.
For precise specifications and applications, consulting the datasheet provided by the manufacturer is recommended.
The "IR" prefix indicates it originated from International Rectifier, a company acquired by Infineon. The "PBF" suffix often denotes that the component is lead-free and RoHS compliant, meaning it adheres to environmental standards restricting the use of certain hazardous substances.
Key features of such components can include high-speed switching, low on-resistance, and robust thermal performance, making them suitable for high-efficiency power conversion systems. The specific characteristics like voltage, current ratings, and package type would define its application scope, such as in consumer electronics, automotive, industrial, or telecommunications sectors.
For precise specifications and applications, consulting the datasheet provided by the manufacturer is recommended.
Features
The IR2125PBF is a high-speed power MOSFET and IGBT driver designed to drive gate voltages in various industrial applications. Key features include:
1. Single Channel Driver: It operates as a single high-side driver, suitable for N-channel MOSFETs and IGBTs.
2. High-Speed Operation: It offers fast switching speeds with a propagation delay of typically around 120 ns, which enhances performance in high-frequency applications.
3. Floating Channel: The driver can operate up to 600V, ensuring compatibility with high-voltage applications.
4. Bootstrap Circuitry: It includes built-in bootstrap circuitry, which simplifies the design and reduces the need for additional components.
5. Undervoltage Lockout (UVLO): This feature protects the system by preventing operation if the supply voltage is too low for reliable operation.
6. Integrated Dead Time: The driver includes a programmable dead time capability to prevent shoot-through and improve system reliability.
7. CMOS Schmitt-triggered Inputs: These inputs provide high noise immunity and ensure stable operation in noisy environments.
8. Low Power Consumption: With a low quiescent current, the driver is efficient and conserves power.
These attributes make the IR2125PBF suitable for motor drives, power supplies, and other high-voltage applications.
1. Single Channel Driver: It operates as a single high-side driver, suitable for N-channel MOSFETs and IGBTs.
2. High-Speed Operation: It offers fast switching speeds with a propagation delay of typically around 120 ns, which enhances performance in high-frequency applications.
3. Floating Channel: The driver can operate up to 600V, ensuring compatibility with high-voltage applications.
4. Bootstrap Circuitry: It includes built-in bootstrap circuitry, which simplifies the design and reduces the need for additional components.
5. Undervoltage Lockout (UVLO): This feature protects the system by preventing operation if the supply voltage is too low for reliable operation.
6. Integrated Dead Time: The driver includes a programmable dead time capability to prevent shoot-through and improve system reliability.
7. CMOS Schmitt-triggered Inputs: These inputs provide high noise immunity and ensure stable operation in noisy environments.
8. Low Power Consumption: With a low quiescent current, the driver is efficient and conserves power.
These attributes make the IR2125PBF suitable for motor drives, power supplies, and other high-voltage applications.
Package
The IR2125PBF is typically available in a DIP (Dual In-line Package) or SOIC (Small Outline Integrated Circuit) package type. These packages are designed for ease of use in through-hole and surface-mount configurations, respectively.
Pinout
The IR2125PBF is an integrated circuit designed for driving MOSFETs. It is a high-side single channel driver with a bootstrapping capability, making it suitable for applications requiring high-speed switching. The IR2125PBF comes in an 8-pin package. Here is a brief outline of the pin functions:
1. VCC (Pin 1): Supply voltage for the IC.
2. IN (Pin 2): Input signal for controlling the gate driver.
3. COM (Pin 3): Common ground reference for the IC.
4. NC (Pin 4): No connection.
5. VB (Pin 5): High-side floating supply voltage.
6. HO (Pin 6): High-side gate drive output.
7. VS (Pin 7): High-side floating supply return.
8. VDD (Pin 8): Logic supply voltage.
This IC is primarily used in applications such as motor control, power supplies, and other circuits requiring efficient MOSFET driving capabilities. The bootstrap operation allows for control of high-side power MOSFETs in half-bridge and full-bridge configurations.
1. VCC (Pin 1): Supply voltage for the IC.
2. IN (Pin 2): Input signal for controlling the gate driver.
3. COM (Pin 3): Common ground reference for the IC.
4. NC (Pin 4): No connection.
5. VB (Pin 5): High-side floating supply voltage.
6. HO (Pin 6): High-side gate drive output.
7. VS (Pin 7): High-side floating supply return.
8. VDD (Pin 8): Logic supply voltage.
This IC is primarily used in applications such as motor control, power supplies, and other circuits requiring efficient MOSFET driving capabilities. The bootstrap operation allows for control of high-side power MOSFETs in half-bridge and full-bridge configurations.
Manufacturer
The IR2125PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that develops solutions for automotive, industrial, and multimarket sectors. It produces a wide range of semiconductor products including power semiconductors, microcontrollers, and other integrated circuits.
Application
The IR2125PBF is a high-side driver IC commonly used in applications requiring efficient driving of MOSFETs and IGBTs. It is particularly useful in motor control, power supply regulation, and automotive systems. The device's ability to handle high voltages makes it suitable for industrial applications like inverter circuits, switch-mode power supplies, and uninterruptible power supplies (UPS). Additionally, it is often employed in renewable energy systems, such as solar inverters, due to its robust performance in high-voltage environments.
Equivalent
The IR2125PBF is a high-side MOSFET driver. Equivalent products include the MIC5011 from Microchip, the FAN7382 from ON Semiconductor, and the TPS2812 from Texas Instruments. These alternatives offer similar functionality but check the datasheets for specific electrical characteristics and compatibility.
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