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IR2113
IC GATE DRVR HALF-BRIDGE 14DIP
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規格
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, MOSFET (N-Channel) |
| Voltage - Supply | 3.3V ~ 20V |
| Logic Voltage - VIL, VIH | 6V, 9.5V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Rise / Fall Time (Typ) | 25ns, 17ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 14-DIP (0.300", 7.62mm) |
| Supplier Device Package | 14-DIP |
| Base Product Number | IR2113 |
概述
Description
IR2113 is a high-voltage, high-speed driver designed for driving insulated gate bipolar transistors (IGBTs) and MOSFETs in various power applications. It features a dual output configuration, allowing control of both high-side and low-side switches in half-bridge configurations, making it ideal for motor drives, solar inverters, and other power conversion systems.
Key features include a high-voltage bootstrap functionality, enabling the driving of high-side switches with voltages up to 600V, and a built-in dead-time control to prevent shoot-through conditions. The IR2113 also incorporates a built-in overcurrent protection mechanism and is designed for high-speed switching, which enhances efficiency and reduces heat generation.
With its robust design, the IR2113 is suitable for many industries, including automotive, renewable energy, and industrial automation, where efficient power management is crucial.
Key features include a high-voltage bootstrap functionality, enabling the driving of high-side switches with voltages up to 600V, and a built-in dead-time control to prevent shoot-through conditions. The IR2113 also incorporates a built-in overcurrent protection mechanism and is designed for high-speed switching, which enhances efficiency and reduces heat generation.
With its robust design, the IR2113 is suitable for many industries, including automotive, renewable energy, and industrial automation, where efficient power management is crucial.
Features
The IR2113 is a high-voltage, high-speed power MOSFET and IGBT driver designed for driving power devices in motor control and power conversion applications. Key features include:
1. High Voltage Capability: It can operate with a supply voltage of up to 600V.
2. High-Speed Operation: Capable of switching at frequencies up to 500 kHz, facilitating rapid response in control systems.
3. Integrated Bootstrap Circuit: Allows for driving the high-side MOSFET with a simple external capacitor, enhancing efficiency in half-bridge configurations.
4. Independent High and Low Side Outputs: Provides control for both high-side and low-side devices, making it versatile for various configurations.
5. Under Voltage Lockout (UVLO): Protects the driver and the MOSFETs by disabling the outputs when supply voltage is below a certain threshold.
6. Short-Circuit Protection: Helps prevent damage to the circuit during fault conditions.
7. Thermal Shutdown: Provides an additional layer of protection by turning off the driver in case of overheating.
These features make the IR2113 suitable for applications in motor drivers, power inverters, and other high-power switching circuits.
1. High Voltage Capability: It can operate with a supply voltage of up to 600V.
2. High-Speed Operation: Capable of switching at frequencies up to 500 kHz, facilitating rapid response in control systems.
3. Integrated Bootstrap Circuit: Allows for driving the high-side MOSFET with a simple external capacitor, enhancing efficiency in half-bridge configurations.
4. Independent High and Low Side Outputs: Provides control for both high-side and low-side devices, making it versatile for various configurations.
5. Under Voltage Lockout (UVLO): Protects the driver and the MOSFETs by disabling the outputs when supply voltage is below a certain threshold.
6. Short-Circuit Protection: Helps prevent damage to the circuit during fault conditions.
7. Thermal Shutdown: Provides an additional layer of protection by turning off the driver in case of overheating.
These features make the IR2113 suitable for applications in motor drivers, power inverters, and other high-power switching circuits.
Package
The IR2113 is commonly available in a 14-pin DIP (Dual In-line Package) and a 16-pin SOIC (Small Outline Integrated Circuit) package. These packages facilitate easy integration into circuit designs for driving high and low-side MOSFETs in motor control and power conversion applications.
Pinout
The IR2113 is a high-voltage, high-speed power MOSFET and IGBT driver designed for driving high-side and low-side switches in half-bridge and full-bridge configurations. It features a total of 14 pins with the following key functions:
1. HO (High-Side Output) - Drives the high-side MOSFET.
2. LO (Low-Side Output) - Drives the low-side MOSFET.
3. VB (Bootstrap Voltage) - Supplies the high-side driver with a voltage above the supply voltage.
4. VS (High-Side Source) - Connects to the source of the high-side MOSFET.
5. VCC - Provides power to the low-side driver and logic circuitry.
6. COM - Common ground reference for the low-side driver.
7. IN - Logic level input for controlling the low-side MOSFET.
8. SD (Shutdown) - Disables the outputs when low.
9. VFO - Floating supply voltage for high-side operation.
10. R1, R2 - Resistors for setting dead time or other parameters (internal).
11. NC (No Connect) - Not internally connected, for layout flexibility.
This driver is commonly used in motor control and power conversion applications.
1. HO (High-Side Output) - Drives the high-side MOSFET.
2. LO (Low-Side Output) - Drives the low-side MOSFET.
3. VB (Bootstrap Voltage) - Supplies the high-side driver with a voltage above the supply voltage.
4. VS (High-Side Source) - Connects to the source of the high-side MOSFET.
5. VCC - Provides power to the low-side driver and logic circuitry.
6. COM - Common ground reference for the low-side driver.
7. IN - Logic level input for controlling the low-side MOSFET.
8. SD (Shutdown) - Disables the outputs when low.
9. VFO - Floating supply voltage for high-side operation.
10. R1, R2 - Resistors for setting dead time or other parameters (internal).
11. NC (No Connect) - Not internally connected, for layout flexibility.
This driver is commonly used in motor control and power conversion applications.
Manufacturer
The IR2113 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on providing innovative products for various industries, including automotive, industrial, and consumer electronics, emphasizing energy efficiency and performance. Infineon Technologies is headquartered in Neubiberg, Germany, and operates worldwide, playing a significant role in advancing technology for a sustainable future.
Application
The IR2113 is primarily used in motor drive applications, including brushless DC motors and stepper motors. It is also suitable for driving high-side and low-side IGBT and MOSFET transistors in various power electronics applications, such as inverters, converters, and power supplies. Additionally, it finds use in industrial automation, renewable energy systems, and automotive applications where efficient switching and control of power devices are essential.
Equivalent
Equivalent products to the IR2113 chip include the IR2110, IR2112, and IR2114. Other similar alternatives are the MIC4427, UCC27324, and Si823H. When selecting a replacement, consider specifications such as voltage ratings, switching frequency, and package type to ensure compatibility with your application.
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