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IPW65R110CFD
MOSFETs N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
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| Packaging | Tube |
| Standard Pack Qty | 240 |
概述
Description
The IPW65R110CFD is a high-performance power MOSFET designed for various applications, including power management and conversion systems. It belongs to the Infineon CoolMOS™ series, known for its efficiency and thermal performance. With a breakdown voltage of 650V, it is suitable for high-voltage applications.
Key features include a low on-resistance (RDS(on)) of 0.110 ohms, enabling reduced conduction losses, and a fast switching capability, which improves overall efficiency in power electronics. The device is typically used in switch-mode power supplies (SMPS), solar inverters, and other industrial applications where efficiency is crucial.
Additionally, the IPW65R110CFD's compact package design helps optimize PCB space, making it a preferred choice for modern power electronics designs. Overall, its combination of high voltage rating, low on-resistance, and robust performance makes it an ideal solution for engineers looking to enhance the efficiency and reliability of their designs.
Key features include a low on-resistance (RDS(on)) of 0.110 ohms, enabling reduced conduction losses, and a fast switching capability, which improves overall efficiency in power electronics. The device is typically used in switch-mode power supplies (SMPS), solar inverters, and other industrial applications where efficiency is crucial.
Additionally, the IPW65R110CFD's compact package design helps optimize PCB space, making it a preferred choice for modern power electronics designs. Overall, its combination of high voltage rating, low on-resistance, and robust performance makes it an ideal solution for engineers looking to enhance the efficiency and reliability of their designs.
Features
The IPW65R110CFD is a high-performance N-channel MOSFET designed for various applications, particularly in power management. Key features include:
1. Voltage Rating: Rated at 650V, making it suitable for high-voltage applications.
2. RDS(on): Low on-resistance of 110 mΩ enables efficient power handling and reduced conduction losses.
3. Gate Threshold Voltage: Offers a gate-to-source threshold voltage range, facilitating easy drive requirements.
4. High-Speed Switching: Optimized for fast switching, which enhances efficiency in power conversion applications.
5. Robust Package: Available in a DPAK package, providing good thermal performance and ease of mounting.
6. Avalanche Rated: Capable of withstanding transient conditions, adding reliability in dynamic operating environments.
7. Applications: Suitable for use in power supplies, motor drives, and other switching applications.
These features make the IPW65R110CFD ideal for designers seeking efficiency and reliability in their power electronic circuits.
1. Voltage Rating: Rated at 650V, making it suitable for high-voltage applications.
2. RDS(on): Low on-resistance of 110 mΩ enables efficient power handling and reduced conduction losses.
3. Gate Threshold Voltage: Offers a gate-to-source threshold voltage range, facilitating easy drive requirements.
4. High-Speed Switching: Optimized for fast switching, which enhances efficiency in power conversion applications.
5. Robust Package: Available in a DPAK package, providing good thermal performance and ease of mounting.
6. Avalanche Rated: Capable of withstanding transient conditions, adding reliability in dynamic operating environments.
7. Applications: Suitable for use in power supplies, motor drives, and other switching applications.
These features make the IPW65R110CFD ideal for designers seeking efficiency and reliability in their power electronic circuits.
Package
The IPW65R110CFD is packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for high-power applications in electronics.
Pinout
The IPW65R110CFD is an N-channel MOSFET from Infineon Technologies with a total of 8 pins. Its primary function is to serve as a power switch in various applications, including power management and motor control.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or negative side of the power supply.
The specific pins are typically labeled as follows:
1. Gate
2. Drain
3. Source
4. Drain
5. Source
6. Gate
7. Source
8. Source
This arrangement allows for effective switching and control of high-voltage and high-current applications, making it suitable for industrial and automotive uses. The device features low on-resistance and high efficiency, crucial for minimizing power losses.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or negative side of the power supply.
The specific pins are typically labeled as follows:
1. Gate
2. Drain
3. Source
4. Drain
5. Source
6. Gate
7. Source
8. Source
This arrangement allows for effective switching and control of high-voltage and high-current applications, making it suitable for industrial and automotive uses. The device features low on-resistance and high efficiency, crucial for minimizing power losses.
Manufacturer
The IPW65R110CFD is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of products, including power semiconductors, microcontrollers, and sensors. The company focuses on providing solutions for automotive, industrial, and communication applications, with a strong emphasis on energy efficiency and innovation. Infineon is known for its expertise in power management and provides essential components for various industries, contributing to advancements in technology and sustainability.
Application
The IPW65R110CFD is an N-channel MOSFET primarily used in power applications, including switch-mode power supplies (SMPS), DC-DC converters, and motor drives. Its high efficiency and low RDS(on) make it suitable for automotive applications, industrial equipment, and renewable energy systems like solar inverters. Additionally, it can be utilized in consumer electronics for efficient power management solutions.
Equivalent
The IPW65R110CFD is a 650V N-channel MOSFET. Equivalent products include the STP65NF65, FGH50N65SMD, and AUIRF3708. Always verify specifications such as voltage, current ratings, RDS(on), and package type before substituting.
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