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IPW65R048CFDA
MOSFETs N-Ch 650V 63.3A TO247-3
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| Packaging | Tube |
| Standard Pack Qty | 240 |
概述
Description
The IPW65R048CFDA is a high-performance N-channel MOSFET designed for power applications, characterized by a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 65A. It features low on-resistance (R_DS(on)), typically around 0.048 ohms, which contributes to efficient power management and reduced heat generation during operation.
This MOSFET is suitable for various applications, including power supplies, converters, and motor controls, where efficient switching is critical. It offers fast switching speeds, making it ideal for high-frequency applications.
The "CFDA" designation indicates features such as a TO-247 packaging and a specific gate charge profile, enhancing thermal performance and reliability. Its robust design allows for operation in demanding environments, making it a preferred choice among engineers for designing energy-efficient systems.
This MOSFET is suitable for various applications, including power supplies, converters, and motor controls, where efficient switching is critical. It offers fast switching speeds, making it ideal for high-frequency applications.
The "CFDA" designation indicates features such as a TO-247 packaging and a specific gate charge profile, enhancing thermal performance and reliability. Its robust design allows for operation in demanding environments, making it a preferred choice among engineers for designing energy-efficient systems.
Features
The IPW65R048CFDA is a high-performance N-channel MOSFET from Infineon, designed for use in power electronics applications. Key features include:
1. Low On-Resistance: It has a low R_DS(on) value of 48 mΩ, which minimizes power loss during operation.
2. High Voltage Rating: Rated for 650V, it is suitable for high-voltage applications.
3. High Current Capability: This device can handle continuous currents up to 65A, making it ideal for demanding applications.
4. Fast Switching Speeds: It offers rapid switching capabilities, reducing switching losses and improving efficiency.
5. Thermal Performance: Designed with a high thermal conductivity package, it ensures effective heat dissipation.
6. Applications: Commonly used in industrial drives, solar inverters, and power supplies.
The IPW65R048CFDA is ideal for applications requiring efficiency and reliability in power conversion and management.
1. Low On-Resistance: It has a low R_DS(on) value of 48 mΩ, which minimizes power loss during operation.
2. High Voltage Rating: Rated for 650V, it is suitable for high-voltage applications.
3. High Current Capability: This device can handle continuous currents up to 65A, making it ideal for demanding applications.
4. Fast Switching Speeds: It offers rapid switching capabilities, reducing switching losses and improving efficiency.
5. Thermal Performance: Designed with a high thermal conductivity package, it ensures effective heat dissipation.
6. Applications: Commonly used in industrial drives, solar inverters, and power supplies.
The IPW65R048CFDA is ideal for applications requiring efficiency and reliability in power conversion and management.
Package
The IPW65R048CFDA is packaged in a TO-247 format, which is a robust, through-hole package designed for high-power applications. This package type allows for effective heat dissipation and is suitable for various power electronic applications.
Pinout
The IPW65R048CFDA is a power MOSFET from Infineon Technologies, specifically designed for high-efficiency applications. It features a total of 8 pins. The main functions of these pins include:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Connects to the load; the output from the MOSFET.
3. Source (S): Ground reference for the MOSFET; connects to the circuit return.
The IPW65R048CFDA is optimized for high-voltage applications and offers low on-state resistance, making it suitable for use in power converters and motor drives. Its design allows it to handle substantial current levels while maintaining thermal efficiency.
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Connects to the load; the output from the MOSFET.
3. Source (S): Ground reference for the MOSFET; connects to the circuit return.
The IPW65R048CFDA is optimized for high-voltage applications and offers low on-state resistance, making it suitable for use in power converters and motor drives. Its design allows it to handle substantial current levels while maintaining thermal efficiency.
Manufacturer
The IPW65R048CFDA is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovations in power semiconductors, particularly in the areas of MOSFETs and IGBTs, which are critical for energy efficiency in various electronic devices and systems. Infineon serves diverse markets such as automotive, industrial, and consumer electronics, focusing on sustainability and energy efficiency in its products.
Application
The IPW65R048CFDA is a 650V N-channel MOSFET designed for applications in power conversion systems, including switch-mode power supplies (SMPS), motor drives, and renewable energy systems like solar inverters. Its low on-resistance and high efficiency make it suitable for high-frequency applications, automotive power management, and industrial automation.
Equivalent
The IPW65R048CFDA is a MOSFET from Infineon Technologies, specifically a 650V, 48mΩ device. Equivalent products include:
1. STP65NF06 - STMicroelectronics
2. IRF840 - Infineon (International Rectifier)
3. BSC099N06NS3 - Infineon
4. FDP047N06 - ON Semiconductor
Always verify specifications like Vds, Rds(on), and package type for compatibility.
1. STP65NF06 - STMicroelectronics
2. IRF840 - Infineon (International Rectifier)
3. BSC099N06NS3 - Infineon
4. FDP047N06 - ON Semiconductor
Always verify specifications like Vds, Rds(on), and package type for compatibility.
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