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IPW60R199CP
16A, 600V, 0.199OHM, N-CHANNEL M
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規格
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| ProductStatus | Active |
概述
Description
IPW60R199CP is a high-voltage, high-current N-channel power MOSFET from the IPW60R family (Infineon/IR). It is designed for switching power applications and is packaged in the CP (D²PAK-like) surface-mount package.
Key points
- Voltage/current: Vds ≈ 600 V; Id ≈ 60 A continuous (rating depends on case temp).
- On-resistance: Rds(on) ≈ 0.199 Ω (199 mΩ) at Vgs ≈ 10 V (specs vary with temperature).
- Technology: Trench MOSFET with fast switching, suitable for high-efficiency SMPS, motor drives, inverters, and DC-DC converters.
- Gate drive: Typically requires ≈ 10 V gate drive for full conduction; consider appropriate drive strength and gate charge.
- Protection: Standard body diode; avalanche ruggedness as per datasheet.
- Packaging: CP (surface-mount) for good thermal performance with a heatsink or copper plane.
Note: Exact values depend on temperature and conditions; consult the official datasheet for precise electrical characteristics, thermal performance, and safe operating area.
Key points
- Voltage/current: Vds ≈ 600 V; Id ≈ 60 A continuous (rating depends on case temp).
- On-resistance: Rds(on) ≈ 0.199 Ω (199 mΩ) at Vgs ≈ 10 V (specs vary with temperature).
- Technology: Trench MOSFET with fast switching, suitable for high-efficiency SMPS, motor drives, inverters, and DC-DC converters.
- Gate drive: Typically requires ≈ 10 V gate drive for full conduction; consider appropriate drive strength and gate charge.
- Protection: Standard body diode; avalanche ruggedness as per datasheet.
- Packaging: CP (surface-mount) for good thermal performance with a heatsink or copper plane.
Note: Exact values depend on temperature and conditions; consult the official datasheet for precise electrical characteristics, thermal performance, and safe operating area.
Features
IPW60R199CP is a high-voltage, high-current N‑channel power MOSFET in a CP (D²PAK) package. Key features:
- Vds: about 600 V
- Id: around 199 A (continuous)
- Rds(on): roughly 60 mΩ (at Vgs = 10 V)
- Trench MOSFET technology for low gate charge and fast switching
- Suitable for hard-switching applications with good switching performance
- Integrated intrinsic body diode with rugged avalanche energy capability
- RoHS-compliant, surface-mount package (CP/D²PAK)
- Typical applications: switch-mode power supplies, DC-DC converters, motor drives, high-voltage switching
Note: values are typical/spec estimates; consult the exact datasheet for precise numbers and conditions (temperature, gate drive, etc.).
- Vds: about 600 V
- Id: around 199 A (continuous)
- Rds(on): roughly 60 mΩ (at Vgs = 10 V)
- Trench MOSFET technology for low gate charge and fast switching
- Suitable for hard-switching applications with good switching performance
- Integrated intrinsic body diode with rugged avalanche energy capability
- RoHS-compliant, surface-mount package (CP/D²PAK)
- Typical applications: switch-mode power supplies, DC-DC converters, motor drives, high-voltage switching
Note: values are typical/spec estimates; consult the exact datasheet for precise numbers and conditions (temperature, gate drive, etc.).
Package
The IPW60R199CP is supplied in a TO-247-3 (TO-247) through-hole power package — a three-pin package with a mounting/heatsink tab.
Pinout
Pin count: 3 external pins plus a metal heatsink tab (4 conductive terminals total).
Functions (viewing the front face with pins down, left-to-right):
- Pin 1: Gate — control input.
- Pin 2: Drain — main output, also connected to the metal tab/heatsink.
- Pin 3: Source — return/reference (connected to the device source).
Functions (viewing the front face with pins down, left-to-right):
- Pin 1: Gate — control input.
- Pin 2: Drain — main output, also connected to the metal tab/heatsink.
- Pin 3: Source — return/reference (connected to the device source).
Manufacturer
Manufacturer: Infineon Technologies AG.
What kind of company: Infineon is a German multinational semiconductor company that designs and manufactures power semiconductors (e.g., MOSFETs, IGBTs), microcontrollers, sensors and security ICs for automotive, industrial, consumer and power-management applications.
What kind of company: Infineon is a German multinational semiconductor company that designs and manufactures power semiconductors (e.g., MOSFETs, IGBTs), microcontrollers, sensors and security ICs for automotive, industrial, consumer and power-management applications.
Application
Common application areas for IPW60R199CP include:
- Offline switch-mode power supplies and adapters
- AC/DC/DC-DC converters and PFC stages
- Motor drives and control circuits for appliances and industrial equipment
- Solar inverters and renewable-energy interfaces
- UPS/inverter modules and telecom/data-center power management
- Battery charging/control circuits in consumer and industrial systems
- Offline switch-mode power supplies and adapters
- AC/DC/DC-DC converters and PFC stages
- Motor drives and control circuits for appliances and industrial equipment
- Solar inverters and renewable-energy interfaces
- UPS/inverter modules and telecom/data-center power management
- Battery charging/control circuits in consumer and industrial systems
Equivalent
I don’t have live database access. To give accurate equivalents I need the IPW60R199CP’s key specs (VDS, RDS(on), package, continuous ID, switching energy). If it’s a 600 V, ~0.199 Ω N‑channel MOSFET in a TO‑247/TO‑220 style package, I can then list close cross‑references (Infineon, ST, Vishay, ON Semi). Which parameters matter most?
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