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IPW60R160P6

Name: IPW60R160P6
Rating: 4.7 (12 reviews)

POWER FIELD-EFFECT TRANSISTOR

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規格

Supplier	Rochester Electronics, LLC
Package	Bulk
Series	CoolMOS™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	23.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	160mOhm @ 9A, 10V
Vgs(th)(Max)@Id	4.5V @ 750µA
GateCharge(Qg)(Max)@Vgs	44 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	2080 pF @ 100 V
PowerDissipation(Max)	176W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	PG-TO247-3-41

概述

Description

IPW60R160P6 is Infineon’s 600 V, 60 A N‑channel trench power MOSFET in the IPW60R family. It combines a relatively low on‑state resistance (about 0.16 Ω) with fast switching, making it suitable for switch‑mode power supplies, DC–DC converters, motor drives, and inverters. The “P6” suffix denotes the power package type. Gate drive requirements are typical for MOSFETs (e.g., around 10–12 V gate drive). For exact specs (Rds(on), Vds, Id, switching characteristics, thermal limits, and package details), consult the official Infineon datasheet.

Features

IPW60R160P6 is an Infineon Intelligent Power Module (IPM) with a built‑in gate drive and protection features. Key characteristics:
- 600 V blocking voltage
- Dual N-channel MOSFETs in a single half-bridge configuration
- Integrated gate driver with bootstrap for high-side drive
- Protections: undervoltage lockout, overcurrent, overtemperature, short‑circuit protection
- Shoot‑through prevention and fault reporting
- Low on-state resistance for high efficiency
- High switching performance with controlled dv/dt/di/dt
- Isolation between control and power sections
- Wide operating temperature range and rugged, compact P6 package
- Suitable for motor drives, inverters, power supplies, and other high-power applications
Note: for exact electrical specs (Rds(on), current rating, switching speeds), consult the latest datasheet.

Package

The IPW60R160P6 is a power MOSFET supplied in a TO-220 (P6) through-hole package.

Pinout

The IPW60R160P6 is an N‑channel power MOSFET with 3 electrical pins:
- Pin 1: Gate (G) — control input that modulates the channel.
- Pin 2: Drain (D) — main power terminal; often tied to the metal mounting tab/heatsink.
- Pin 3: Source (S) — return/ground for the channel.
Note: the package includes a metal tab/heatsink that is electrically connected to the Drain.

Manufacturer

Manufacturer: Infineon Technologies AG (originally marketed under International Rectifier).
Infineon is a global semiconductor company headquartered in Germany that specializes in power semiconductors and system solutions for automotive, industrial, and power-management applications.

Application

IPW60R160P6 is an intelligent 6-pack power module for three‑phase motor drives. Common application areas include:
- Three‑phase motor control (BLDC/PMSM) in industrial automation and consumer appliances
- Inverters/variable-frequency drives (HVAC, pumps, fans)
- Power supplies and front-end converters (PFC stages)
- Renewable-energy inverters and UPS/power-conversion systems

Equivalent

Do you mean electrical equivalents (Vds, Rds(on), package) or drop-in pin/package replacements? Which parameters matter most (voltage, current, Rds(on), gate charge, package)?