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IPW60R120P7
N-CHANNEL POWER MOSFET
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- 製造商。 部分 #IPW60R120P7
- 包 TO-247
- 資料表 IPW60R120P7 DataSheet
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概述
Description
The IPW60R120P7 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It is part of the Infineon CoolMOS™ series, specifically optimized for fast-switching and high-voltage tasks. With a voltage rating of 600V and a current rating of 120A, it is suitable for various power conversion applications including power supplies, motor drives, and renewable energy systems.
Key features include low on-resistance, fast switching capabilities, and high reliability, which contribute to reduced power losses and improved thermal performance. The device typically comes in a TO-247 package, making it easy to integrate into existing designs. Its characteristics make it ideal for use in applications such as resonant converters, inverters, and other high-frequency switching environments.
Overall, the IPW60R120P7 is a versatile component for engineers seeking effective solutions in power management and energy efficiency.
Key features include low on-resistance, fast switching capabilities, and high reliability, which contribute to reduced power losses and improved thermal performance. The device typically comes in a TO-247 package, making it easy to integrate into existing designs. Its characteristics make it ideal for use in applications such as resonant converters, inverters, and other high-frequency switching environments.
Overall, the IPW60R120P7 is a versatile component for engineers seeking effective solutions in power management and energy efficiency.
Features
The IPW60R120P7 is a 600V N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Operates up to 600V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 120A, making it ideal for robust power management.
3. Low Gate Charge: Offers a low total gate charge (around 60nC), facilitating faster switching speeds and improved efficiency.
4. RDS(on): Exhibits a low on-resistance (approximately 0.12Ω), minimizing conduction losses.
5. Thermal Performance: Features a TO-247 package, which enhances heat dissipation, ensuring reliable operation under high load.
6. Fast Switching: Suitable for high-frequency applications due to its quick switching capabilities.
7. Applications: Commonly used in power supplies, motor drives, and renewable energy systems.
These characteristics make the IPW60R120P7 a versatile choice for engineers seeking high-efficiency power solutions.
1. Voltage Rating: Operates up to 600V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 120A, making it ideal for robust power management.
3. Low Gate Charge: Offers a low total gate charge (around 60nC), facilitating faster switching speeds and improved efficiency.
4. RDS(on): Exhibits a low on-resistance (approximately 0.12Ω), minimizing conduction losses.
5. Thermal Performance: Features a TO-247 package, which enhances heat dissipation, ensuring reliable operation under high load.
6. Fast Switching: Suitable for high-frequency applications due to its quick switching capabilities.
7. Applications: Commonly used in power supplies, motor drives, and renewable energy systems.
These characteristics make the IPW60R120P7 a versatile choice for engineers seeking high-efficiency power solutions.
Package
The IPW60R120P7 is packaged in a TO-247 format, which is a popular package type for high-power devices. This package offers good thermal performance and is suitable for applications requiring efficient heat dissipation.
Pinout
The IPW60R120P7 is an N-channel MOSFET manufactured by Infineon Technologies. It has a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's on/off state by applying a voltage.
2. Drain (D): The terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): The terminal connected to ground or the negative side of the circuit; current flows from source to drain when the MOSFET is conducting.
4. Gate (G): Again, used for control as in the first pin.
5. Drain (D): Second drain pin for improved current handling.
6. Source (S): Second source pin for improved thermal dissipation.
This MOSFET is designed for high-voltage applications (rated for 600V) and is suitable for various switching applications in power supplies and motor drives.
1. Gate (G): Controls the MOSFET's on/off state by applying a voltage.
2. Drain (D): The terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): The terminal connected to ground or the negative side of the circuit; current flows from source to drain when the MOSFET is conducting.
4. Gate (G): Again, used for control as in the first pin.
5. Drain (D): Second drain pin for improved current handling.
6. Source (S): Second source pin for improved thermal dissipation.
This MOSFET is designed for high-voltage applications (rated for 600V) and is suitable for various switching applications in power supplies and motor drives.
Manufacturer
The IPW60R120P7 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency and advanced technology. Infineon's products are widely used in applications like electric vehicles, renewable energy systems, and smart appliances. As a leader in the semiconductor sector, Infineon is known for its commitment to innovation and sustainability.
Application
The IPW60R120P7 is a power MOSFET used in various applications, including industrial motor drives, power supplies, and renewable energy systems. Its features make it suitable for high-efficiency switching in inverters, converters, and other power management systems. Additionally, it can be employed in electric vehicles, UPS systems, and consumer electronics, where efficient energy conversion and thermal performance are essential.
Equivalent
The IPW60R120P7 is an N-channel MOSFET from Infineon with a voltage rating of 600V and a current rating of 120A. Equivalent products include the STB60N120, MTP60N120, and FGH60N120 from other manufacturers. Always check specific datasheets for detailed specifications to ensure compatibility for your application.
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