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IPW60R041P6

Name: IPW60R041P6
Rating: 4.7 (12 reviews)

MOSFETs HIGH POWER PRICE/PERFORM

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資料表 IPW60R041P6 DataSheet
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Packaging	Tube
Standard Pack Qty	240

概述

Description

The IPW60R041P6 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. Manufactured by Infineon Technologies, it features a breakdown voltage of 600V and a maximum drain current of 41A. The device is notable for its low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation.
Key specifications include a maximum gate-source voltage of ±20V and a total gate charge (Q_g) that offers fast switching capabilities. The IPW60R041P6 is ideal for use in applications such as switch-mode power supplies (SMPS), motor drives, and power inverters, where reliable performance and thermal management are crucial.
It is packaged in a TO-220 or DPAK format, facilitating easy heat dissipation and integration into various circuit designs. This MOSFET's combination of high voltage rating, low on-resistance, and robust performance makes it suitable for demanding electronic applications.

Features

The IPW60R041P6 is an N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-to-source voltage of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current of up to 41A, allowing it to manage significant loads.
3. RDS(on): It has a low on-resistance of approximately 0.041 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, enabling better performance in switching applications.
5. Thermal Performance: It supports a maximum junction temperature of 150°C, enhancing reliability in demanding environments.
6. TO-247 Package: The component is housed in a TO-247 package, which allows for effective heat dissipation.
These features make the IPW60R041P6 well-suited for power supply, motor control, and other high-voltage applications in industrial and consumer electronics.

Package

The IPW60R041P6 is packaged in a TO-247 type format, which is a standard package used for high-power applications, offering good thermal performance and ease of mounting.

Pinout

The IPW60R041P6 is an N-channel MOSFET designed for high-efficiency applications. It has a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): The control pin used to turn the MOSFET on or off.
2. Drain (D): The output pin where the load connects, allowing current to flow to the load when the device is on.
3. Source (S): The reference pin that connects to ground or the lower potential in the circuit.
The specific pin layout and connections may vary slightly depending on the package type (such as TO-220 or similar). The IPW60R041P6 is known for its low R_DS(on) and high voltage rating, making it suitable for power electronics applications such as converters and inverters. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.

Manufacturer

The manufacturer of the IPW60R041P6 is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in providing a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. Infineon’s products are used in various applications, such as automotive systems, industrial power supplies, and consumer electronics. The company is known for its innovation in power semiconductors, especially in the field of IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), which are crucial for efficient energy management and conversion.

Application

The IPW60R041P6 is an IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications such as motor drives, inverters, and power supplies. Its features make it suitable for industrial automation, renewable energy systems (like solar inverters), and electric vehicles due to its efficiency and thermal performance. It is also utilized in welding equipment and various power conversion applications.

Equivalent

The IPW60R041P6 is an N-channel MOSFET with a 600V rating and a maximum continuous drain current of 41A. Equivalent products include the STP60NF06, IRF840, and FQP60N60. Always verify specifications such as RDS(on), VGS(th), and package type for compatibility in your specific application.