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IPT60R035CFD7
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規格
| Brand | WeEn Semiconductors |
| Factory Pack Quantity:Factory Pack Quantity | 2500 |
概述
Description
The IPT60R035CFD7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It belongs to the Infineon Technologies family of devices and is characterized by its low on-resistance, high-speed switching capabilities, and robustness, making it suitable for use in various applications, including power supplies, motor drives, and DC-DC converters.
Key features include a maximum drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 60A, and an exceptionally low on-resistance (RDS(on)) of around 3.5 mΩ, which enhances efficiency and minimizes heat generation. The device's fast switching times improve overall performance in high-frequency applications.
The IPT60R035CFD7 is housed in a TO-220 package, which facilitates effective heat dissipation, and is optimized for easy mounting on PCBs. It is widely used in automotive, industrial, and consumer applications due to its reliability and efficiency. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Key features include a maximum drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 60A, and an exceptionally low on-resistance (RDS(on)) of around 3.5 mΩ, which enhances efficiency and minimizes heat generation. The device's fast switching times improve overall performance in high-frequency applications.
The IPT60R035CFD7 is housed in a TO-220 package, which facilitates effective heat dissipation, and is optimized for easy mounting on PCBs. It is widely used in automotive, industrial, and consumer applications due to its reliability and efficiency. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Features
The IPT60R035CFD7 is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Supports up to 60V, suitable for a variety of power applications.
2. RDS(on): Low on-state resistance of 35 mΩ, which minimizes conduction losses and improves efficiency.
3. Current Rating: Can handle continuous drain current of up to 60A, depending on the thermal conditions.
4. Package Type: Available in a DPAK package for effective thermal management and space-saving designs.
5. Fast Switching: Optimized for fast switching speeds, making it ideal for applications such as DC-DC converters and motor drives.
6. Gate Threshold Voltage (Vgs(th)): Low gate threshold voltage, allowing for easy drive with standard logic levels.
7. Robustness: Designed for high reliability in challenging environments, suitable for automotive and industrial applications.
This combination of features makes the IPT60R035CFD7 a versatile component for modern power electronics.
1. Voltage Rating: Supports up to 60V, suitable for a variety of power applications.
2. RDS(on): Low on-state resistance of 35 mΩ, which minimizes conduction losses and improves efficiency.
3. Current Rating: Can handle continuous drain current of up to 60A, depending on the thermal conditions.
4. Package Type: Available in a DPAK package for effective thermal management and space-saving designs.
5. Fast Switching: Optimized for fast switching speeds, making it ideal for applications such as DC-DC converters and motor drives.
6. Gate Threshold Voltage (Vgs(th)): Low gate threshold voltage, allowing for easy drive with standard logic levels.
7. Robustness: Designed for high reliability in challenging environments, suitable for automotive and industrial applications.
This combination of features makes the IPT60R035CFD7 a versatile component for modern power electronics.
Package
The IPT60R035CFD7 is packaged in a DPAK (TO-252) format. This package type is designed for surface-mount applications, providing efficient heat dissipation and compactness, suitable for power management in various electronic devices.
Pinout
The IPT60R035CFD7 is an N-channel MOSFET manufactured by Infineon Technologies. It has a total of 4 pins. The pin configuration typically includes the following functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This pin is connected to the load. When the MOSFET is turned on, it allows current to flow from the drain to the source.
3. Source (S) - This pin is connected to the ground or negative side of the power supply, completing the circuit when the MOSFET is activated.
4. Body Diode (internal) - While not a physical pin, the device includes an intrinsic body diode between the drain and source, which allows current to flow in reverse when the MOSFET is off.
The IPT60R035CFD7 is designed for applications requiring high efficiency and fast switching, commonly used in power management and conversion systems.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This pin is connected to the load. When the MOSFET is turned on, it allows current to flow from the drain to the source.
3. Source (S) - This pin is connected to the ground or negative side of the power supply, completing the circuit when the MOSFET is activated.
4. Body Diode (internal) - While not a physical pin, the device includes an intrinsic body diode between the drain and source, which allows current to flow in reverse when the MOSFET is off.
The IPT60R035CFD7 is designed for applications requiring high efficiency and fast switching, commonly used in power management and conversion systems.
Manufacturer
The IPT60R035CFD7 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on areas such as power management, automotive electronics, and security technologies. Infineon is known for its innovation in power semiconductors, which are crucial for energy efficiency and performance in electronic devices.
Application
The IPT60R035CFD7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including industrial motor drives, power inverters, welding equipment, and renewable energy systems like solar and wind power converters. Its low conduction and switching losses make it ideal for energy-efficient designs in high-voltage power electronics.
Equivalent
The IPT60R035CFD7 is an N-channel MOSFET from Infineon. Equivalent products include:
1. STP60NF06 - STMicroelectronics
2. IRLZ44N - Infineon (formerly International Rectifier)
3. FQP50N06 - Fairchild Semiconductor
4. BTA60-600V - ON Semiconductor
Always verify specifications like VDS, ID, RDS(on), and package type for exact compatibility.
1. STP60NF06 - STMicroelectronics
2. IRLZ44N - Infineon (formerly International Rectifier)
3. FQP50N06 - Fairchild Semiconductor
4. BTA60-600V - ON Semiconductor
Always verify specifications like VDS, ID, RDS(on), and package type for exact compatibility.
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