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IPP80P03P4L-04
MOSFETs P-Ch -30V 80A TO220-3 OptiMOS-P2
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規格
| Packaging | Tube |
| Standard Pack Qty | 500 |
概述
Description
IPP80P03P4L-04 is a specific model of an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. It is produced by Infineon Technologies and is characterized by its ability to handle high voltages and currents, making it suitable for use in various electronic circuits, particularly in power supplies, converters, and motor drivers.
The key specifications typically include a maximum drain-source voltage (V_DS) of around 30V, a continuous drain current (I_D) rating of about 80A, and a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation.
This MOSFET features a TO-220 package for effective thermal management and ease of mounting on circuit boards. It is ideal for applications requiring high efficiency and reliability, such as in automotive, industrial, and consumer electronics.
Overall, the IPP80P03P4L-04 is a robust component suitable for high-performance applications in modern electronic designs.
The key specifications typically include a maximum drain-source voltage (V_DS) of around 30V, a continuous drain current (I_D) rating of about 80A, and a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation.
This MOSFET features a TO-220 package for effective thermal management and ease of mounting on circuit boards. It is ideal for applications requiring high efficiency and reliability, such as in automotive, industrial, and consumer electronics.
Overall, the IPP80P03P4L-04 is a robust component suitable for high-performance applications in modern electronic designs.
Features
The IPP80P03P4L-04 is a Power MOSFET designed for high-efficiency applications. Key features include:
1. Type: N-channel enhancement mode MOSFET.
2. Voltage Rating: 30V maximum drain-source voltage.
3. Current Rating: Capable of handling continuous drain current up to 80A.
4. On-State Resistance: Low R_DS(on) of approximately 4mΩ, ensuring minimal power loss during operation.
5. Thermal Performance: Good thermal stability and heat dissipation, suitable for high power applications.
6. Gate Threshold Voltage: Typically between 2-4V, enabling easy drive with standard logic levels.
7. Package Type: Typically comes in a TO-220 or similar package for efficient heat dissipation and easier mounting.
8. Applications: Commonly used in power management systems, DC-DC converters, and motor control circuits.
Overall, the IPP80P03P4L-04 is ideal for applications requiring high power handling with efficiency and reliability.
1. Type: N-channel enhancement mode MOSFET.
2. Voltage Rating: 30V maximum drain-source voltage.
3. Current Rating: Capable of handling continuous drain current up to 80A.
4. On-State Resistance: Low R_DS(on) of approximately 4mΩ, ensuring minimal power loss during operation.
5. Thermal Performance: Good thermal stability and heat dissipation, suitable for high power applications.
6. Gate Threshold Voltage: Typically between 2-4V, enabling easy drive with standard logic levels.
7. Package Type: Typically comes in a TO-220 or similar package for efficient heat dissipation and easier mounting.
8. Applications: Commonly used in power management systems, DC-DC converters, and motor control circuits.
Overall, the IPP80P03P4L-04 is ideal for applications requiring high power handling with efficiency and reliability.
Package
The IPP80P03P4L-04 is typically packaged in a TO-220 format, which is a standard type of package for power MOSFETs. This package allows for efficient heat dissipation and is suitable for high-power applications.
Pinout
The IPP80P03P4L-04 is a P-channel MOSFET with a pin count of 3. The typical pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate relative to the source terminal determines whether the MOSFET is on (conducting) or off (non-conducting).
2. Drain (D): This pin is where the current flows out of the device when it is turned on. It connects to the load in a circuit.
3. Source (S): This pin is connected to the higher potential side of the circuit. In a P-channel MOSFET, current flows from the source to the drain when the device is on.
The IPP80P03P4L-04 is designed for use in power applications, featuring a high voltage rating and low on-resistance, making it suitable for switching and amplification tasks.
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate relative to the source terminal determines whether the MOSFET is on (conducting) or off (non-conducting).
2. Drain (D): This pin is where the current flows out of the device when it is turned on. It connects to the load in a circuit.
3. Source (S): This pin is connected to the higher potential side of the circuit. In a P-channel MOSFET, current flows from the source to the drain when the device is on.
The IPP80P03P4L-04 is designed for use in power applications, featuring a high voltage rating and low on-resistance, making it suitable for switching and amplification tasks.
Manufacturer
The IPP80P03P4L-04 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in power semiconductors, automotive electronics, and microcontrollers, with a focus on efficiency, reliability, and innovation in various applications including automotive, industrial, and consumer electronics. The company is headquartered in Neubiberg, Germany, and is known for its commitment to advancing technology in energy efficiency and sustainable solutions.
Application
The IPP80P03P4L-04 is a P-channel MOSFET primarily used in power management applications. Its application areas include power supply circuits, DC-DC converters, motor control, and load switching. It is suited for low-voltage applications where efficient switching and thermal performance are essential, such as in consumer electronics, automotive systems, and renewable energy systems.
Equivalent
The IPP80P03P4L-04 is a power MOSFET. Equivalent products include:
1. IRF320
2. STP80NF03
3. FDP80N03
4. BSS123
5. MTP80N03
Always check datasheets for specific characteristics like voltage ratings, RDS(on), and package types to ensure compatibility.
1. IRF320
2. STP80NF03
3. FDP80N03
4. BSS123
5. MTP80N03
Always check datasheets for specific characteristics like voltage ratings, RDS(on), and package types to ensure compatibility.
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