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IPP60R190P6
MOSFETs HIGH POWER_PRC/PRFRM
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| Packaging | Tube |
| Standard Pack Qty | 500 |
概述
Description
The IPP60R190P6 is a high-performance N-channel MOSFET from Infineon Technologies, designed for use in power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of up to 60A. The device is characterized by its low on-resistance (R_DS(on)), which enhances efficiency in power conversion and switching applications.
The MOSFET is commonly used in various applications, including power supplies, motor drives, and inverters, due to its ability to handle high voltages and currents effectively. Its fast switching capabilities make it suitable for use in high-frequency applications, while its robust thermal performance allows for reliable operation in demanding environments.
Additionally, the IPP60R190P6 is encapsulated in a TO-220 package, facilitating good heat dissipation and ease of integration into circuit designs. Overall, this MOSFET is ideal for engineers seeking efficient and reliable solutions for high-voltage applications.
The MOSFET is commonly used in various applications, including power supplies, motor drives, and inverters, due to its ability to handle high voltages and currents effectively. Its fast switching capabilities make it suitable for use in high-frequency applications, while its robust thermal performance allows for reliable operation in demanding environments.
Additionally, the IPP60R190P6 is encapsulated in a TO-220 package, facilitating good heat dissipation and ease of integration into circuit designs. Overall, this MOSFET is ideal for engineers seeking efficient and reliable solutions for high-voltage applications.
Features
The IPP60R190P6 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various applications, including industrial drives, renewable energy systems, and motor control. Key features include:
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: Capable of handling up to 190A, making it suitable for high-power applications.
3. Low Switching Losses: Optimized for efficient operation, minimizing energy losses during switching events.
4. High Speed: Offers fast switching capabilities, which improves efficiency in power conversion.
5. Robust Design: Built to withstand harsh operating conditions, enhancing reliability and longevity.
6. Thermal Performance: Good thermal management properties, allowing for effective heat dissipation.
7. Package Type: Typically available in a TO-247 or similar package, facilitating easy integration into various circuits.
This IGBT is ideal for applications requiring high efficiency and performance, contributing to the advancement of power electronic systems.
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: Capable of handling up to 190A, making it suitable for high-power applications.
3. Low Switching Losses: Optimized for efficient operation, minimizing energy losses during switching events.
4. High Speed: Offers fast switching capabilities, which improves efficiency in power conversion.
5. Robust Design: Built to withstand harsh operating conditions, enhancing reliability and longevity.
6. Thermal Performance: Good thermal management properties, allowing for effective heat dissipation.
7. Package Type: Typically available in a TO-247 or similar package, facilitating easy integration into various circuits.
This IGBT is ideal for applications requiring high efficiency and performance, contributing to the advancement of power electronic systems.
Package
The IPP60R190P6 is packaged in a TO-247 format. This package type is designed for high-power applications, providing good thermal performance and mechanical stability.
Pinout
The IPP60R190P6 is an N-channel MOSFET from Infineon, specifically designed for high-performance applications. It features a TO-220 package with a total of three pins.
Pin Count: 3
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to this pin, the MOSFET can be turned on (conducting) or off (non-conducting).
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the on state. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference for the gate voltage.
The IPP60R190P6 is notable for its low on-resistance and high current handling capabilities, making it suitable for applications in power electronics, including motor control and DC-DC converters.
Pin Count: 3
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to this pin, the MOSFET can be turned on (conducting) or off (non-conducting).
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the on state. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference for the gate voltage.
The IPP60R190P6 is notable for its low on-resistance and high current handling capabilities, making it suitable for applications in power electronics, including motor control and DC-DC converters.
Manufacturer
The manufacturer of the IPP60R190P6 is Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in designing and producing a variety of semiconductor and system solutions. Their products are used in numerous applications, including automotive, industrial power control, and digital security. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensor technologies. The company plays a significant role in enabling energy efficiency and sustainability through its innovative technologies, catering to a wide range of industries worldwide.
Application
The IPP60R190P6 is an N-channel MOSFET primarily used in high-efficiency power applications. Its application areas include power supplies, motor drives, DC-DC converters, and renewable energy systems such as solar inverters. It is suitable for use in automotive, industrial, and consumer electronics where high performance and low switching losses are required.
Equivalent
The IPP60R190P6 is an N-channel MOSFET from Infineon. Equivalent products include the STP60N190, BUK7YF60-100, and FDD60N190. Ensure to verify specifications like voltage, current ratings, and RDS(on) to ensure compatibility for your application.
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